INFINEON BDP947, BDP949 User Manual
Silicon NPN Transistors
j
g
• For AF driver and output stages
BDP947, BDP949
• High collector current
• High current gain
4
2
1
• Low collector-emitter saturation voltage
• Complementary types: BDP948, BDP950 (PNP)
Type Marking Pin Configuration Package
BDP947
BDP949
BDP947
BDP949
1=B
1=B
2=C
2=C
3=E
3=E
4=C
4=C- -
-
-
SOT223
SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BDP947
BDP949
Collector-base voltage
BDP947
V
V
CEO
CBO
45
60
45
V
3
BDP949
Emitter-base voltage V
Collector current I
Peak collector current I
Base current I
Peak base current I
Total power dissipation-
T
≤ 99 °C
S
Junction temperature T
Storage temperature T
C
CM
B
BM
P
EBO
tot
st
60
5
3 A
5
200 mA
500
3 W
150 °C
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
R
thJS
≤ 17
K/W
2006-01-241
BDP947, BDP949
A
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0 , BDP947
C
I
= 10 mA, IB = 0 , BDP949
C
Collector-base breakdown voltage
I
= 100 µA, IE = 0 , BDP947
C
I
= 100 µA, IE = 0 , BDP949
C
Emitter-base breakdown voltage
I
= 10 µA, IC = 0
E
Collector-base cutoff current
V
= 45 V, IE = 0
CB
V
= 45 V, IE = 0 , TA = 150 °C
CB
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
45
60
45
60
-
-
-
-
5 - -
-
-
-
-
0.1
20
V
-
-
-
-
µA
Emitter-base cutoff current
V
= 4 V, IC = 0
EB
DC current gain1)
I
= 10 mA, VCE = 5 V
C
I
= 500 mA, VCE = 1 V
C
I
= 2 A, VCE = 2 V
C
Collector-emitter saturation voltage1)
I
= 2 A, IB = 0.2 A
C
Base emitter saturation voltage1)
I
= 2 A, IB = 0.2 A
C
AC Characteristics
Transition frequency
I
= 50 mA, VCE = 10 V, f = 100 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
C
cb
- - 100 nA
-
-
-
25
85
50
-
-
475
-
- - 0.5 V
- - 1.3
- 100 - MHz
- 25 - pF
1
Pulse test: t < 300µs; D < 2%
2006-01-242
BDP947, BDP949
DC current gain h
V
= 2 V
CE
3
10
-
2
10
hFE
1
10
0
10
10
0
10
1
= ƒ(IC)
FE
-55°C
100°C
25°C
2
10
10
Collector-emitter saturation voltage
I
= ƒ(V
C
4
10
mA
3
10
C
I
2
10
1
10
0
3
I
mA
C
10
4
10
0 0.1 0.2 0.3 0.4
CEsat
), hFE = 10
100°C
25°C
-50°C
V
0.6
V
CEsat
Base-emitter saturation voltage
I
= (V
C
C
I
10
mA
10
10
10
10
4
3
2
1
0
), hFE = 10
BEsat
0 0.2 0.4 0.6 0.8 1
-50°C
25°C
100°C
V
V
BEsat
1.3
Collector current I
V
= 2 V
CE
4
10
mA
3
10
C
I
2
10
1
10
0
10
0 0.2 0.4 0.6 0.8 1
= ƒ(VBE)
C
-50°C
25°C
100°C
V
V
BE
1.3
2006-01-243
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