Infineon BCX69-10, BCX69-16, BCX69-25 Schematic [ru]
PNP Silicon AF Transistors
BCX69...
• For general AF applications
• High collector current
1
2
3
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX68 (NPN)
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCX69-10
BCX69-16
BCX69-25
CF
CG
CH
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
SOT89
SOT89
SOT89
Maximum Ratings
Parameter
Symbol Value Unit
2
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
Collector current I
Peak collector current, tp ≤ 10 ms I
Base current I
Peak base current I
Total power dissipation-
T
= 114 °C
S
P
Junction temperature T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point
1
Pb-containing package may be available upon special request
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
Symbol Value Unit
R
CEO
CBO
EBO
C
CM
B
BM
tot
j
stg
thJS
20 V
25
5
1 A
2
100 mA
200
3 W
150 °C
-65 ... 150
≤ 12
K/W
1
2008-10-10
BCX69...
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
= 30 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 1 µA, IC = 0
E
Collector-base cutoff current
V
= 25 V, IE = 0
CB
V
= 25 V, IE = 0 , TA = 150
CB
DC current gain1)
I
= 5 mA, VCE = 10 V
C
I
= 500 mA, VCE = 1 V, BCX69-10
C
I
= 500 mA, VCE = 1 V, BCX69-16
C
I
= 500 mA, VCE = 1 V, BCX69-25
C
I
= 1 A, VCE = 1 V
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
20 - -
25 - -
5 - -
-
-
50
85
100
160
60
-
-
-
100
160
250
-
0.1
100
-
160
250
375
-
V
µA
-
Collector-emitter saturation voltage1)
I
= 1 A, IB = 100 mA
C
Base-emitter voltage1)
I
= 5 mA, VCE = 10 V
C
I
= 1 A, VCE = 1 V
C
AC Characteristics
Transition frequency
= 100 mA, VCE = 5 V, f = 20 MHz
I
C
1
Pulse test: t < 300µs; D < 2%
V
CEsat
V
BE(ON)
f
T
- - 0.5 V
-
-
0.6
-
-
1
- 100 - MHz
2
2008-10-10
BCX69...
DC current gain hFE = ƒ(IC)
= 1 V
V
CE
BCX 69 EHP00475
3
10
5
h
FE
100
˚C
25
˚C
2
10
-50
˚C
5
1
10
5
0
10
0
10 10 10 10
1
555
10
2
Collector-emitter saturation voltage
= ƒ(V
I
C
Ι
C
34
mA
Ι
C
), hFE = 10
CEsat
BCX 69 EHP00473
4
10
10
mA
3
10
10
5
100
˚C
25
10
10
2
-50
˚C
˚C
5
1
10
5
0
10
0 0.4 0.8
0.2 0.6
V
V
CE sat
Base-emitter saturation voltage
= ƒ(V
I
C
mA
Ι
C
BCX 69 EHP00472
4
10
3
10
5
2
10
5
1
10
5
0
10
0 0.6
), hFE = 10
BEsat
˚C
100
˚C
25
-50
˚C
0.2 0.4 0.8 1.0
V
BE sat
Collector current IC = ƒ(VBE)
= 1V
V
CE
BCX 69 EHP00474
4
10
mA
Ι
C
3
10
5
2
10
5
1
10
5
0
1.2
V
10
0 0.6
0.2 0.4 0.8 1.0
100
25
-50
˚C
˚C
˚C
1.2
V
V
BE
3
2008-10-10
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