Infineon BCX68, BCX68-10, BCX68-16, BCX68-25 Schematic [ru]
NPN Silicon AF Transistors
g
BCX 68
• For general AF applications
2
1
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX 69 (PNP)
Type Marking Pin Configuration Package
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
CA
CB
CC
CD
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3
3 = E
3 = E
3 = E
3 = E
SOT-89
SOT-89
SOT-89
SOT-89
2
VPS05162
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
Junction - soldering point
= 130 °C P
S
Symbol Values Unit
V
V
V
I
C
I
CM
I
B
I
BM
T
T
R
R
CEO
CBO
EBO
tot
j
st
thJA
thJS
20 V
25
5
1 A
2
100 mA
200
1 W
150 °C
-65 ... 150
≤75
≤20
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Sep-30-19991
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BCX 68
Parameter
Characteristics
Collector-emitter breakdown voltage
I
= 30 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IB = 0
C
Emitter-base breakdown voltage
I
= 1 µA, IC = 0
E
Collector cutoff current
V
= 25 V, IE = 0
CB
Collector cutoff current
V
= 25 V, IE = 0 , TA = 150 °C
CB
DC current gain 1)
I
= 5 mA, VCE = 10 V
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
h
FE
20 - - V
25 - -
5 - -
- - 100 nA
- - 100 µA
50 - - -
DC current gain 1)
I
= 500 mA, VCE = 1 V
C
DC current gain 1)
I
= 1 A, VCE = 1 V
C
Collector-emitter saturation voltage1)
I
= 1 A, IB = 100 mA
C
Base-emitter voltage 1)
I
= 5 mA, VCE = 10 V
C
I
= 1 A, VCE = 1 V
C
AC Characteristics
Transition frequency
= 100 mA, VCE = 5 V, f = 20 MHz
I
C
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
h
FE
h
FE
V
CEsat
V
BE(ON)
f
T
85
85
100
160
-
100
160
250
375
160
250
375
-
60 - -
- - 0.5 V
-
-
0.6
-
-
1
- 100 - MHz
1) Pulse test: t ≤ 300µs, D = 2%
Sep-30-19992
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