INFINEON BCV29, BCV49 User Manual
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NPN Silicon Darlington Transistors
BCV29, BCV49
For general AF applications
2
1
High collector current
High current gain
Complementary types: BCV28, BCV48 (PNP)
Type Marking Pin Configuration Package
BCV29
BCV49
EF
EG
1 = B
1 = B
2 = C
2 = C
3 = E
3 = E
Maximum Ratings
Parameter
Symbol
3
4 = C
4 = C
BCV29 BCV49
SOT89
SOT89
2
VPS05162
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current 100
Peak base current
Total power dissipation, TS = 130 °C P
Junction temperature
Storage temperature
V
V
V
I
C
I
CM
I
B
I
BM
T
T
CEO
CBO
EBO
tot
j
st
30 60 V
40 80
10 10
500 mA
800
200
1 W
150 °C
-65 ... 150
Thermal Resistance
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
R
thJS
20 K/W
1 Jul-12-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BCV29, BCV49
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 10 mA, IB = 0
I
C
Collector-base breakdown voltage
= 100 µA, IB = 0
I
C
Emitter-base breakdown voltage
= 10 µA, IC = 0
I
E
Collector cutoff current
= 30 V, IE = 0
V
CB
= 60 V, IE = 0
V
CB
Collector cutoff current
= 30 V, IE = 0 , TA = 150 °C
V
CB
= 60 V, IE = 0 , TA = 150 °C
V
CB
BCV29
BCV49
BCV29
BCV49
BCV29
BCV49
BCV29
BCV49
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
30
60
40
80
10 - -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
100
10
10
V
nA
µA
Emitter cutoff current
= 4 V, IC = 0
V
EB
DC current gain 1)
= 100 µA, VCE = 1 V
I
C
DC current gain 1)
= 10 mA, VCE = 5 V
I
C
DC current gain 1)
= 100 mA, VCE = 5 V
I
C
DC current gain 1)
= 0.5 A, VCE = 5 V
I
C
BCV29
BCV49
BCV29
BCV49
BCV29
BCV49
BCV29
BCV49
I
EBO
h
FE
h
FE
h
FE
h
FE
- - 100 nA
4000
2000
10000
4000
20000
10000
4000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1) Pulse test: t ≤ 300µs, D = 2%
2 Jul-12-2001
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