INFINEON BC846A, BC846B, BC846BW, BC847A, BC847B User Manual

NPN Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types:

BC856...-BC860...(PNP)

BC846...-BC850...

1

2006-09-19

BC846...-BC850...

Type Marking Pin Configuration Package

BC846A

BC846B

BC846BW

BC847A

BC847B

BC847BF

BC847BL3

BC847BT

BC847BW

BC847C

BC847CW

BC848A

BC848AW

BC848B

BC848BF

BC848BL3

1As

1Bs

1Bs

1Es

1Fs

1Fs

1F

1F

1Fs

1Gs

1Gs

1Js

1Js

1Ks

1Ks

1K

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SOT23

SOT23

SOT323

SOT23

SOT23

TSFP-3

TSLP-3-1

SC75

SOT323

SOT23

SOT323

SOT23

SOT323

SOT23

TSFP-3

TSLP-3-1

BC848BW

BC848C

BC848CW

BC849B

BC849BF

BC849C

BC849CW

BC850B

BF850BF

BC850BW

BC850C

BC850CW

1Ks

1Ls

1Ls

2Bs

2Bs

2Cs

2Cs

2Fs

2Fs

2Fs

2Gs

2Gs

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

1=B

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

2=E

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

3=C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SOT323

SOT23

SOT323

SOT23

TSFP-3

SOT23

SOT323

SOT23

TSFP-3

SOT323

SOT23

SOT323

2

2006-09-19

Maximum Ratings

BC846...-BC850...

Parameter

Collector-emitter voltage

BC846...

BC847..., BC850...

BC848..., BC849...

Collector-emitter voltage

BC846...

BC847..., BC850...

BC848..., BC849...

Collector-base voltage

BC846...

BC847..., BC850...

BC848..., BC849...

Emitter-base voltage

BC846...

Symbol Value Unit

V

CEO

V

65

45

30

V

CES

80

50

30

V

CBO

80

50

30

V

EBO

6

BC847..., BC850...

BC848..., BC849...

Collector current I

Peak collector current I

Total power dissipation-

T

≤ 71 °C, BC846-BC850

S

T

≤ 128 °C, BC847F-BC850F

S

T

≤ 135 °C, BC847L3-BC848L3

S

T

≤ 109 °C, BC847T

S

T

≤ 124 °C, BC846W-BC850W

S

Junction temperature T

Storage temperature T

C

CM

P

tot

j

stg

6

6

100 mA

200

330

250

250

250

250

150 °C

-65 ... 150

mW

3

2006-09-19

Thermal Resistance
Parameter

BC846...-BC850...

Symbol Value Unit

Junction - soldering point1)

BC846-BC850

BC847F-BC850F

BC847L3-BC848L3

BC847T

BC846W-BC850W

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

R

thJS

≤ 240

≤ 90

≤ 60
≤ 165
≤ 105

K/W

4

2006-09-19

BC846...-BC850...

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0 , BC846...

C

I

= 10 mA, IB = 0 , BC847..., BC850...

C

I

= 10 mA, IB = 0 , BC848..., BC849...

C

Collector-base breakdown voltage

I

= 10 µA, IE = 0 , BC846...

C

I

= 10 µA, IE = 0 , BC847..., BC850...

C

I

= 10 µA, IE = 0 , BC848..., BC849...

C

Emitter-base breakdown voltage

I

= 0 , IC = 10 µA

E

Collector-base cutoff current

V

= 45 V, IE = 0

CB

V

= 30 V, IE = 0 , TA = 150 °C

CB

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

65

45

30

80

50

30

-

-

-

-

-

-

- 6 -

-

-

0.015

5

V

-

-

-

-

-

-

µA

-

-

DC current gain1)

I

= 10 µA, VCE = 5 V, hFE-grp.A

C

I

= 10 µA, VCE = 5 V, hFE-grp.B

C

I

= 10 µA, VCE = 5 V, hFE-grp.C

C

I

= 2 mA, VCE = 5 V, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, hFE-grp.C

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

h

FE

V

CEsat

V

BEsat

V

BE(ON)

-

-

-

110

200

420

-

-

-

-

580

-

140

250

480

180

290

520

90

200

700

900

660

-

-

-

-

220

450

800

250

600

-

-

700

770

-

mV

1

Pulse test: t < 300µs; D < 2%

5

2006-09-19

Electrical Characteristics at TA = 25°C, unless otherwise specified

BC846...-BC850...

Parameter

AC Characteristics

Transition frequency

I

= 10 mA, VCE = 5 V, f = 100 MHz

C

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Short-circuit input impedance

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

C

Open-circuit reverse voltage transf. ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

C

Symbol Values Unit

min. typ. max.

f

C

C

h

h

T

cb

eb

11e

12e

- 250 - MHz

- 0.95 - pF

- 9 -

-

-

-

-

-

-

2.7

4.5

8.7

1.5

2

3

kΩ

-

-

-

10

-4

-

-

-

Short-circuit forward current transf. ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

C

Open-circuit output admittance

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B

C

I

= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C

C

Noise figure

I

= 200 µA, VCE = 5 V, f = 1 kHz,

C

∆ f = 200 Hz, R

= 2 kΩ, BC849..., BC850...

S

Equivalent noise voltage

I

= 200 µA, VCE = 5 V, R

C

= 2 kΩ,

S

f = 10 ... 50 Hz , BC850...

h

h

F

V

21e

22e

n

-

-

-

-

-

-

200

330

600

18

30

60

-

-

-

µS

-

-

-

- 1.2 4 dB

- - 0.135 µV

6

2006-09-19