INFINEON BC817UPN User Manual

查询BC817UPN供应商

NPN/PNP Silicon Transistor Array

BC817UPN

For AF input stages and driver applications



High current gain



Low collector-emitter saturation voltage



Two (galvanic) internal isolated NPN/PNP

Transistors in one package

Tape loading orientation

C1 B2 E2

6 54

TR1

TR2

321

C2B1E1

EHA07177

Top View

456

W1s

123

Direction of Unreeling

Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device

Position in tape: pin 1
opposite of feed hole side

SC74_Tape

Type Marking Pin Configuration Package

BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1

5

6

2

1

VPW09197

SC74



4

3

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
DC collector current I
Peak collector current I

Base current I
Peak base current I
Total power dissipation, TS = 115 °C

P

Junction temperature T
Storage temperature T

Thermal Resistance

Junction - soldering point

1)

R

CEO

CBO

EBO

C

CM

B

BM

tot

j

stg

thJS

45 V

50

5

500 mA

1 A

100 mA

200

330 mW

150 °C

-65 ... 150



105 K/W

1

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Aug-21-20021

Electrical Characteristics at TA=25°C, unless otherwise specified

BC817UPN

Parameter

DC Characteristics

Collector-emitter breakdown voltage

= 10 mA, IB = 0

I

C

Collector-base breakdown voltage

= 10 µA, IE = 0

I

C

Emitter-base breakdown voltage

= 10 µA, IC = 0

I

E

Collector cutoff current

= 25 V, IE = 0

V

CB

Collector cutoff current

= 25 V, IE = 0 , TA = 150 °C

V

CB

Emitter cutoff current

= 4 V, IC = 0

V

EB

Symbol Values Unit

min. typ. max.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CBO

I

EBO

45 - - V

50 - -

5 - -

- - 100 nA

- - 50 µA

- - 100 nA

DC current gain 1)

= 100 mA, VCE = 1 V

I

C

= 300 mA, VCE = 1 V

I

C

Collector-emitter saturation voltage1)

= 500 mA, IB = 50 mA

I

C

Base-emitter saturation voltage 1)

= 500 mA, IB = 50 mA

I

C

AC Characteristics

Transition frequency

I

= 50 mA, VCE = 5 V, f = 100 MHz

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

h

FE

V

CEsat

V

BEsat

f

T

C

cb

C

eb

160

100

250

-

400

-

- - 0.7 V

- - 1.2

- 170 - MHz

- 6 - pF

- 60 -

-

1) Pulse test: t < 300s; D < 2%

Aug-21-20022