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NPN/PNP Silicon Transistor Array
BC817UPN
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
C1 B2 E2
6 54
TR1
TR2
321
C2B1E1
EHA07177
Top View
456
W1s
123
Direction of Unreeling
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
SC74_Tape
Type Marking Pin Configuration Package
BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
5
6
2
1
VPW09197
SC74
4
3
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
DC collector current I
Peak collector current I
Base current I
Peak base current I
Total power dissipation, TS = 115 °C
P
Junction temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1)
R
CEO
CBO
EBO
C
CM
B
BM
tot
j
stg
thJS
45 V
50
5
500 mA
1 A
100 mA
200
330 mW
150 °C
-65 ... 150
105 K/W
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
Aug-21-20021
Electrical Characteristics at TA=25°C, unless otherwise specified
BC817UPN
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 10 mA, IB = 0
I
C
Collector-base breakdown voltage
= 10 µA, IE = 0
I
C
Emitter-base breakdown voltage
= 10 µA, IC = 0
I
E
Collector cutoff current
= 25 V, IE = 0
V
CB
Collector cutoff current
= 25 V, IE = 0 , TA = 150 °C
V
CB
Emitter cutoff current
= 4 V, IC = 0
V
EB
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
I
EBO
45 - - V
50 - -
5 - -
- - 100 nA
- - 50 µA
- - 100 nA
DC current gain 1)
= 100 mA, VCE = 1 V
I
C
= 300 mA, VCE = 1 V
I
C
Collector-emitter saturation voltage1)
= 500 mA, IB = 50 mA
I
C
Base-emitter saturation voltage 1)
= 500 mA, IB = 50 mA
I
C
AC Characteristics
Transition frequency
I
= 50 mA, VCE = 5 V, f = 100 MHz
C
Collector-base capacitance
= 10 V, f = 1 MHz
V
CB
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
h
FE
V
CEsat
V
BEsat
f
T
C
cb
C
eb
160
100
250
-
400
-
- - 0.7 V
- - 1.2
- 170 - MHz
- 6 - pF
- 60 -
-
1) Pulse test: t < 300s; D < 2%
Aug-21-20022
BC817UPN
Total power dissipation P
400
mW
300
tot
250
P
200
150
100
50
0
0 20 40 60 80 100 120
= f (TS)
tot
°C
Collector cutoff current I
V
= 25V
CB
5
10
nA
Ι
CBO
4
10
3
10
2
10
1
10
0
150
T
S
10
0
max
50 100
CBO
typ
= f (TA)
EHP00221BC 817/818
˚C
T
150
A
Permissible Pulse Load R
3
10
K/W
2
10
thJS
R
1
10
D=0.5
0.2
0.1
0.05
10
0.02
0.01
0.005
0
-3
10
10
-1
0
10
-6
10
-5
10
-4
thJS
10
= f (tp)
-2
s
Permissible Pulse Load
P
totmax
/ P
totDC
= f (tp)
3
10
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
10
-2
s
t
0
10
p
totDC
/ P
2
10
totmax
P
1
10
0
0
10
t
p
10
10
-6
10
-5
10
-4
Aug-21-20023
BC817UPN
Collector-emitter saturation voltage
I
= f (V
C
Ι
C
10
mA
10
10
10
10
3
2
5
1
5
0
5
-1
0
CEsat
), hFE = 10
150
˚C
25
˚C
˚C
-50
0.2 0.6
0.4 V 0.8
EHP00223BC 817/818
V
CEsat
Base-emitter saturation voltage
I
C
Ι
C
= f (V
3
10
mA
2
10
5
1
10
5
0
10
5
-1
10
0
BEsat
), hFE = 10
˚C
150
25
˚C
˚C
-50
1.0 3.0
2.0 V 4.0
EHP00222BC 817/818
V
BEsat
DC current gain hFE = f (IC)
V
= 5V
CE
3
10
5
h
FE
10
5
10
5
10
˚C
100
25
˚C
-50
˚C
2
1
0
-1 3
10
10
0
10
1
10
Transition frequency fT = f (IC)
V
= 5V
CE
EHP00224BC 817/818
3
10
MHz
f
T
5
2
10
5
1
10
2
10mA
Ι
C
03
10
10
1
10
EHP00218BC 817/818
2
10mA
Ι
C
Aug-21-20024
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