查询BAV99F供应商
Silicon Switching Diode
• For high-speed switching applications
• Series pair configuration
BAV99...
BAV99
BAV99F
BAV99S
BAV99U
BAV99T
BAV99W
4
3
D 1
D 2
1
2
56
D 4
D 3
D 1
D 2
1
2 3
Type Package Configuration Marking
BAV99
BAV99F*
BAV99S
BAV99T
BAV99U
BAV99W
SOT23
TSFP-3
SOT363
SC75
SC74
SOT323
series
series
dual series
series
dual series
series
A7s
A7s
A7s
A7s
A7s
A7s
* Preliminary
1
Mar-10-2004
Maximum Ratings at TA = 25°C, unless otherwise specified
BAV99...
Parameter
Symbol Value Unit
Diode reverse voltage V
Peak reverse voltage V
Forward current I
Non-repetitive peak surge forward current
I
t = 1 µs
t = 1 ms
t = 1 s, single
t = 1 s, double
Total power dissipation
BAV99, T
BAV99F, T
BAV99S, T
BAV99T, T
BAV99U, T
BAV99W, T
≤ 28°C
S
≤ tbd
S
≤ 85°C
S
≤ 104°C
S
≤ 113°C
S
≤ 110°C
S
P
R
RM
F
FSM
tot
80 V
85
200 mA
A
4.5
1
0.5
0.75
mW
330
250
250
250
250
250
Junction temperature T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point1)
BAV99
BAV99F
BAV99S
BAV99T
BAV99U
BAV99W
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
j
stg
150 °C
-65 ... 150
Symbol Value Unit
R
thJS
K/W
≤ 360
≤ tbd
≤ 260
≤ 185
≤ 150
≤ 160
2
Mar-10-2004
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
BAV99...
Breakdown voltage
= 100 µA
I
(BR)
Reverse current
= 70 V
V
R
= 25 V, TA = 150 °C
V
R
= 70 V, TA = 150 °C
V
R
Forward voltage
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
I
F
V
I
V
R
(BR)
F
85 - - V
-
-
-
-
-
-
-
-
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
-
-
-
-
-
-
-
-
0.15
30
50
715
855
1000
1200
1250
µA
mV
AC Characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
Reverse recovery time
I
= 10 mA, IR = 10 mA, measured at IR = 1mA,
F
R
= 100 Ω
L
C
t
T
rr
- - 1.5 pF
- - 4 ns
Test circuit for reverse recovery time
D.U.T.
Ι
F
Oscillograph
EHN00019
Pulse generator: tp = 100ns, D = 0.05,
t
Oscillograph: R = 50, t
= 0.6ns, R
r
r
C ≤ 1pF
= 0.35ns
= 50Ω
i
3
Mar-10-2004