Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1004
DESCRIPTION ·
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For use in horizontal deflection output
stages for color TV receives.
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.5 A
PT Total power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 1100 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
50 W
℃
T
Storage temperature -55~150
stg
℃
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1004
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=0.1A; IB=0 700 V
Emitter-base breakdown votage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=150m A;IB=30mA 5.0 V
Base-emitter saturation voltage IC=150m A;IB=30mA 1.5 V
Collector cut-off current VCB=800V;IE=0 10
Emitter cut-off current VEB=4V;IC=0 10
μA
μA
hFE DC current gai n IC=150m A ; VCE=15V 30 160
fT Transition frequency IC=150m A ; VCE=15V 2.0 MHz
2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1004
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Loading...