Integrated Device Technology Inc IDT7MB4048S35P, IDT7MB4048S30P, IDT7MB4048S25P Datasheet
CSWEOE
OE
CS
WE
Integrated Device Technology, Inc.
512K x 8
CMOS STATIC RAM MODULE
IDT7MB4048
FEATURES:
• High-density 4-megabit (512K x 8) Static RAM module
• Fast access time: 25ns (max.)
Surface mounted plastic packages on a 32-pin, 600 mil
FR-4 DIP substrate
• Single 5V (±10%) power supply
• Inputs/outputs directly TTL-compatible
PIN CONFIGURATION
A
A
A
A
A
A
A
A
A
A
A
A
I/O
I/O
I/O
GND
1
18
2
16
3
14
4
12
5
7
6
6
7
5
8
4
9
3
10
2
11
1
12
0
13
0
14
1
15
2
16
DIP
TOP VIEW
32
Vcc
31
A
A
A
A
A
A
A
I/O
I/O
I/O
I/O
I/O
15
17
13
8
9
11
10
7
6
5
4
3
2675 drw 01
30
29
28
27
26
25
24
23
22
21
20
19
18
17
DESCRIPTION:
The IDT7MB4048 is a 4-megabit (512K x 8) Static RAM
module constructed on a multilayer epoxy laminate (FR-4)
substrate using four 1 megabit SRAMs and a decoder. The
IDT7MB4048 is available with access times as fast as 25ns.
The IDT7MB4048 is packaged in a 32-pin FR-4 DIP resulting
in the JEDEC footprint in a package 1.6 inches long and 0.6
inches wide.
All inputs and outputs of the IDT7MB4048 are TTL-compatible and operate from a single 5V supply. Fully asynchronous circuitry requires no clocks or refresh for operation and
provides equal access and cycle times for ease of use.
FUNCTIONAL BLOCK DIAGRAM
ADDRESS
19
512K x 8
RAM
8
I/O
2675 drw 02
PIN NAMES
I/O0-7 Data Inputs/Outputs
0-18 Addresses
A
CS
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CC Power
V
GND Ground
Chip Select
Write Enable
Output Enable
2675 tbl 01
The IDT logo is a registered trademark of Integrated Device Technology Inc.
COMMERCIAL TEMPERATURE RANGE DECEMBER 1995
©1996 Integrated Device Technology, Inc. DSC-2675/6
7.11 1
IDT7MB4048
512K x 8 CMOS STATIC RAM MODULE COMMERCIAL TEMPERATURE RANGE
TRUTH TABLE
CSCS
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Mode
CS
CSCS
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Output Power
Standby H X X High-Z Standby
Read L L H D
OUT Active
Read L H H High-Z Active
Write L X L D
CAPACITANCE
(1)
(TA = +25°C, f = 1.0MHz)
IN Active
2675 tbl 02
Symbol Parameter Conditions Typ. Unit
IN Input Capacitance VIN = 0V 35 pF
C
C
IN(C) Input Capacitance (
C
OUT Output Capacitance VOUT = 0V 35 pF
NOTE: 2675 tbl 03
1. This parameter is guaranteed by design, but not tested.
CS
)VIN = 0V 8 pF
RECOMMENDED DC OPERATING CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
CC Supply Voltage 4.5 5 5.5 V
V
GND Supply Voltage 0 0 0 V
IH Input High Voltage 2.2 — 6 V
V
IL Input Low Voltage –0.5
V
NOTE: 2675 tbl 04
1. VIL = –2.0V for pulse width less than 10ns.
(1)
— 0.8 V
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Commercial Unit
V
TERM Terminal Voltage –0.5 to +7.0 V
with Respect
to GND
T
A Operating 0 to +70 °C
Temperature
BIAS Temperature –10 to +85 °C
T
Under Bias
T
STG Storage –55 to +125 °C
Temperature
OUT DC Output Current 50 mA
I
NOTE: 2675 tbl 05
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect reliability.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade Temperature GND V
Commercial 0°C to +70°C 0V 5V ± 10%
CC
2675 tbl 06
DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = 0°C to +70°C)
7MB4048SxxP
Symbol Parameter Test Conditions Min. Max. Unit
|ILI| Input Leakage VCC = Max., VIN = GND to VCC —8µA
LO| Output Leakage VCC = Max.,
|I
VOUT = GND to VCC
VOL Output Low Voltage VCC = Min., IOL = 8mA — 0.4 V
VOH Output High Voltage VCC = Min., IOH = –1mA 2.4 — V
CC Dynamic Operating Current VCC = Max.,
I
Outputs Open
SB Standby Supply Current
I
CS
≥ VIH, VCC = Max., f = fMAX,
(TTL Levels) Outputs Open
SB1 Full Standby Supply Current
I
CS
≥ VCC - 0.2V, VIN ≥ VCC - 0.2V — 170 mA
(CMOS Levels) or ≤ 0.2
CS
= VIH,—8µA
CS
≤ VIL; f = fMAX, — 480 mA
250 mA
—
2675 tbl 07
7.11 2
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