Integrated Device Technology Inc IDT7M1014S30GB, IDT7M1014S25GB, IDT7M1014S20G, IDT7M1014S15G Datasheet

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Integrated Device Technology, Inc.

4K x 36
BiCMOS DUAL-PORT
STATIC RAM MODULE

IDT7M1014

FEATURES

• High-density 4K x 36 BiCMOS Dual-Port Static RAM
module

• Fast access times
— Commercial: 15, 20ns
— Military: 25, 30ns

• Fully asynchronous read/write operation from either port

• Surface mounted LCC packages allow through-hole
module to fit on a ceramic PGA footprint

• Single 5V (±10%) power supply

• Multiple GND pins and decoupling capacitors for maxi­mum noise immunity

• Inputs/outputs directly TTL-compatible

FUNCTIONAL BLOCK DIAGRAM

DESCRIPTION

The IDT7M1014 is a 4K x 36 asynchronous high-speed
BiCMOS Dual-Port static RAM module constructed on a co­fired ceramic substrate using 4 IDT7014 (4K x 9) asynchro­nous Dual-Port RAMs. The IDT7M1014 module is designed
to be used as stand-alone 36-bit dual-port RAM.

This module provides two independent ports with separate
control, address, and I/O pins that permit independent and
asynchronous access for reads or writes to any location in
memory.

The IDT7M1014 module is packaged in a 142-lead ceramic
PGA (Pin Grid Array). Maximum access times as fast as 15ns
and 25ns are available over the commercial and military
temperature ranges respectively.

All IDT military modules are constructed with semiconduc­tor components manufactured in compliance with the latest
revision of MIL-STD-883, Class B making them ideally suited
to applications demanding the highest level of performance
and reliability.

L_A

L_I/O

L_I/O

L_I/O

L_I/O

L_

L_R/

L_R/

18 – 26

L_

L_R/

27 – 35

L_R/

0 – 11

0 – 8

9 – 17

R_A

0 – 11

R_I/O

0 – 8

L

0

1

H

2

3

IDT7014

4K x 9

IDT7014

4K x 9

IDT7014

4K x 9

IDT7014

4K x 9

R_

R_R/
R_I/O

R_R/
R_I/O

R_

R_R/
R_I/O

R_R/

L

0

9 – 17

1

18 – 26

H

2

27 – 35

3

2819 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES DECEMBER 1995

©1996 Integrated Device Technology, Inc. DSC-2819/4

7.03 1

IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATION

12345678910111213

3

L_I/O

2

A GND L_I/O

GND L_I/O

1

L_I/O

0

GND R_I/O0R_I/O

1

GND R_I/O2R_I/O

3

GND

B L_I/O

C L_I/O

D L_I/O9L_I/O

E L_I/O

F L_I/O

G GND L_R/

H L_I/O14L_R/

J L_I/O

K L_I/O

L L_I/O

M L_I/O

N GND L_I/O

4

L_I/O

5

8

V

CC

10

12

N.C. N.C. L_A

13

L_

OE

L

W0L_R/

W2L_R/

15

L_I/O

16

20

L_I/O

19

21

V

CC

23

L_I/O

24

26

L_I/O

L_I/O

L_I/O

L_

L_I/O

L_I/O

L_I/O

L_I/O

L_I/O

OE

6

L_A

2

L_A

1

7

GND N.C. N.C. N.C. N.C. N.C. GND R_I/O

11

L_A

3

GND GND R_A

4

H

L_A5 R_A

W

1

GND GND R_R/

W

3

L_A

6

17

L_A

7

18

22

25

27

GND L_A

L_A

8

L_I/O

29

L_I/O

28

10

L_A

9

L_I/O

30

GND L_I/O

PIN NAMES

Left Port Right Port Names

L_R/W 0-3 R_R/W 0-3 Byte Read/Write Enables
L_OE L, H R_OE L, H Word Output Enables
L_A 0-11 R_A 0-11 Address Inputs
L_I/O 0-35 R_I/O 0-35 Data Input/Outputs

VCC Power

GND Ground

L_A

L_A

L_I/O

L_I/O

2819 tbl 01

0

N.C. R_A

11

GND R_A

31

R_I/O35R_I/O34R_I/O

32

L_I/O

35

R_I/O33R_I/O31R_I/O29R_I/O25R_I/O24R_I/O

33

L_I/O

34

R_I/O

0

R_A

1

R_A

2

R_I/O6R_I/O5R_I/O

7

V

CC

3

R_A

4

R_I/O11R_I/O

R_A

5

N.C. N.C. R_I/O

6

R_

OE

H

W1R_R/

R_A7R_R/

R_A

8

11

R_A

10

32

GND R_I/O28R_I/O27R_I/O

GND R_I/O18R_I/O19R_I/O

30

R_A

9

W3R_R/

R_I/O17R_I/O16R_I/O

R_I/O

22

10

R_

OE LR_I/O

W

0

W2R_I/O

V

CC

26

4

R_I/O

8

R_I/O

9

12

13

GND

14

15

20

R_I/O

21

23

GND

2819 drw 02

2809 drw 02

7.03 2

IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE MILITARY AND COMMERCIAL TEMPERATURE RANGES

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Rating Commercial Military Unit

(2)

V

TERM

Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V
with Respect to
GND

(3)

VTERM
T

Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V

A Operating 0 to +70 –55 to +125 °C

Temperature

BIAS Temperature –10 to +85 –65 to +135 °C

T

Under Bias

T

STG Storage –55 to +125 –65 to +150 °C

Temperature

OUT DC Output 50 50 mA

I

Current

NOTES: 2819 tbl 02

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

2. Inputs and V

3. I/O terminals only.

CC terminals only.

RECOMMENDED DC
OPERATING CONDITIONS

Symbol Parameter Min. Typ. Max. Unit

VCC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V
VIH Input HIGH Voltage 2.2 — 6.0 V

V

IL Input LOW Voltage –0.5

NOTE: 2819 tbl 03

1. VIL ≥ –3.0V for pulse width less than 20ns.

(1)

— 0.8 V

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

Ambient

Grade Temperature GND VCC

Military –55°C to +125°C 0V 5.0V ± 10%
Commercial 0°C to +70°C 0V 5.0V ± 10%

2819 tbl 04

CAPACITANCE TABLE (TA = +25°C, f = 1.0MHz)

Symbol Parameter Conditions Max. Unit

C_IN(1) Input Capacitance (Address) V_IN = 0V 50 pF
C_IN(2) Input Capacitance (Data, R/W)V_IN = 0V 15 pF
C_IN(3) Input Capacitance (OE)V_IN = 0V 25 pF

C

OUT Output Capacitance (Data) V_OUT = 0V 15 pF

NOTE: 2819 tbl 05

1. This parameter is guaranteed by design but not tested.

7.03 3