Integrated Device Technology Inc IDT7M1003S50CB, IDT7M1003S40CB, IDT7M1003S40C, IDT7M1003S35C, IDT7M1001S40CB Datasheet

FEATURES

• High-density 1M/512K CMOS Dual-Port Static RAM
module

• Fast access times:
—Commercial 35, 40ns
—Military 40, 50ns

• Fully asynchronous read/write operation from either port

• Full on-chip hardware support of semaphore signaling
between ports

• Surface mounted LCC (leadless chip carriers) compo­nents on a 64-pin sidebraze DIP (Dual In-line Package)

• Multiple Vcc and GND pins for maximum noise immunity

• Single 5V (±10%) power supply

• Input/outputs directly TTL-compatible

DESCRIPTION:

The IDT7M1001/IDT7M1003 is a 128K x 8/64K x 8 high­speed CMOS Dual-Port Static RAM module constructed on a
multilayer ceramic substrate using eight IDT7006 (16K x 8)
Dual-Port RAMs and two IDT FCT138 decoders or depopu­lated using only four IDT7006s and two decoders.

This module provides two independent ports with separate
control, address, and I/O pins that permit independent and
asynchronous access for reads or writes to any location in
memory. System performance is enhanced by facilitating
port-to-port communication via semaphore (

SEM

) “hand­shake” signaling. The IDT7M1001/1003 module is designed
to be used as stand-alone Dual-Port RAM where on-chip
hardware port arbitration is not needed. It is the users re­sponsibility to ensure data integrity when simultaneously
accessing the same memory location from both ports.

The IDT7M1001/1003 module is packaged on a multilayer
co-fired ceramic 64-pin DIP (Dual In-line Package) with di­mensions of only 3.2" x 0.62" x 0.38". Maximum access times
as fast as 35ns over the commercial temperature range are
available.

All inputs and outputs of the IDT7M1001/1003 are TTL­compatible and operate from a single 5V supply. Fully asyn­chronous circuitry is used, requiring no clocks or refreshing for
operation of the module.

All IDT military module semiconductor components are
manufacured in compliance with the latest revision of MIL­STD-883, Class B, making them ideally suited to applications
demanding the highest level of performance and reliability.

128K x 8
64K x 8
CMOS DUAL-PORT
STATIC RAM MODULE

IDT7M1001
IDT7M1003

Left Port Right Port Description

A (0–16)L A (0–16)R Address Inputs

I/O (0–7)L I/O (0–7)R Data Inputs/Outputs

R/

W

L R/WR Read/Write Enables

CS

L

CS

R Chip Select

OE

L

OE

R Output Enable

SEM

L

SEM

R Semaphore Control

VCC Power
GND Ground

2804 tbl 01

PIN CONFIGURATION

(1)

MILITARY AND COMMERCIAL TEMPERATURE RANGES MARCH 1995

1995 Integrated Device Technology, Inc. DSC-7066/5

7.5 1

The IDT logo is a registered trademark of Integrated Device Technology, Inc.



PIN NAMES

DIP

TOP VIEW

CS

W

OE

CS

W

OE

SEM

SEM

2804 drw 01

Integrated Device Technology, Inc.

CC

R/

L
L
L
L

A

0L

A1L

GND

A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L

A10L

NOTE:

1. For the IDT7M1003 (64K x 8) version, Pins 23 and 43 must be connected
to GND for proper operation of the module.

A11L
A12L
A

13L

A14L
A15L

A16L GND
I/O0L
I/O1L
I/O2L
I/O3L
I/O4L
I/O5L
I/O6L
I/O7L

GND

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32

64V
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33

GND
R/

R
R

A0R
A1R
A2R
A3R
A4R
A5R
A6R
A7R
A8R
A9R
A10R
A11R
A12R
A13R
A14R

15R

A
A16R

I/O0R
I/O1R
I/O2R
I/O3R
I/O4R
I/O5R
I/O6R
I/O7R
VCC

R

R

IDT7M1001/1003

L_I/O0-7

R_I/O0-7

R_A0-13

L_I/O0-7

R_I/O0-7

R_A0-13

128K/64K x 8 CMOS DUAL-PORT STATIC RAM MODULE MILITARY AND COMMERCIAL TEMPERATURE RANGES

FUNCTIONAL BLOCK DIAGRAM

7M1001

L_A16
L_A15
L_A14

L_CS

L_A0-13

L_OE
L_R/W

L_SEM

74FCT138

L CS RCS

7006

7025

CS CSL R CS CSL RL CS RCS L CS RCS

CS CS

L R

7006

CS CS

L R

7006

700670067006 7006

74FCT138

7006

R_R/W
R_OE

R_CS

R_A14
R_A15
R_A16

RCSL CS

R_SEM

2804 drw 02

7M1003

L_A15

L_A14

L_CS

L_A0-13

L_OE

L_R/W

L_SEM

74FCT138

L CS RCS

7006

L R

CS CS

7006

CS CS

L R

7006

74FCT138

7006

R_R/W
R_OE

R_CS

R_A14
R_A15

RCSL CS

R_SEM

2804 drw 03

7.5 2

IDT7M1001/1003
128K/64K x 8 CMOS DUAL-PORT STATIC RAM MODULE MILITARY AND COMMERCIAL TEMPERATURE RANGES

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Rating Commercial Military Unit

TERM Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V

V

with Respect to
GND

A Operating 0 to +70 –55 to +125 °C

T

Temperature

T

BIAS Temperature –55 to +125 –65 to +135 °C

Under Bias

T

STG Storage –55 to +125 –65 to +150 °C

Temperature

OUT DC Output 50 50 mA

I

Current

NOTE:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

CAPACITANCE

(1)

(TA = +25°C, f = 1.0MHz)

2804 tbl 02

Symbol Parameter Test Conditions Max. Unit

C

IN1 Input Capacitance VIN = 0V 15 pF

(CS or

SEM

)

CIN2 Input Capacitance VIN = 0V 100 pF

(Data, Address,
All Other Controls)

COUT Output Capacitance VOUT = 0V 100 pF

(Data)

NOTE:

1. This parameter is guaranteed by design but not tested.

2804 tbl 03

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

Ambient

Grade Temperature GND VCC

Military –55°C to +125°C 0V 5.0V ± 10%
Commercial 0°C to +70°C 0V 5.0V ± 10%

2804 tbl 04

RECOMMENDED DC OPERATING
CONDITIONS

Symbol Parameter Min. Typ. Max. Unit

VCC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V
VIH Input High Voltage 2.2 - 6.0 V

IL Input Low Voltage –0.5

V

NOTE:

1. V

IL (min.) = –3.0V for pulse width less than 20ns.

(1)b

b - 0.8 V

2804 tbl 05

DC ELECTRICAL CHARACTERISTICS

(VCC = 5V ± 10%, TA = –55°C to +125°C or 0°C to +70°C)

Commercial Military

(1)

Symbol Parameter Test Conditions Min. Max.

CC2 Dynamic Operating VCC = Max.,

I

CS

≤ VIL,

SEM

≥ VIH — 940 660 — 1130 790 mA

Max.

(2)

Min. Max.

Current (Both Ports Active) Outputs Open, f = fMAX

ICC1 Standby Supply VCC = Max., L_CS or R_CS ≥ VIH — 750 470 — 905 565 mA

Current (One Port Active) Outputs Open, f = fMAX

ISB1 Standby Supply VCC = Max., L_CS and R_CS ≥ VIH — 565 285 — 685 345 mA

Current (TTL Levels) Outputs Open, f = f

SB2 Full Standby Supply L_

I

Current (CMOS Levels) V

NOTES:

1. IDT7M1001 (128K x 8) version only.

2. IDT7M1003 (64K x 8) version only.

L_

SEM

and R_

CS

and R_CS ≥ VCC –0.2V — 125 65 — 245 125 mA

IN > VCC 0.2V or < 0.2V

L_

SEM

and R_

MAX

SEM

≥ VCC –0.2V

SEM

CC –0.2V

≥ V

7.5 3

(1)

Max.

(2)

Unit

2804 tbl 06

IDT7M1001/1003

+5 V

DATA

2804 drw 04

+5 V

DATA

2804 drw 05

128K/64K x 8 CMOS DUAL-PORT STATIC RAM MODULE MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS

(VCC=5.0V ± 10%, TA = –55°C to +125°C and 0°C to +70°C)

IDT7M1001 IDT7M1003

Symbol Parameter Test Conditions Min. Max. Min. Max. Unit

|I

LI| Input Leakage VCC = Max. — 80 — 40 µA

(Address, Data & Other Controls) VIN = GND to VCC

|ILI| Input Leakage VCC = Max. — 10 — 10 µA

(CS and

|ILO| Output Leakage VCC = Max. — 80 — 40 µA

(Data)
VOL Output Low Voltage VCC = Min. IOL = 4mA — 0.4 — 0.4 V
V

OH Output High Voltage VCC = Min. IOH = –4mA 2.4 — 2.4 — V

SEM

) VIN = GND to VCC

CS

≥ VIH, VOUT = GND to VCC

2804 tbl 07

AC TEST CONDITIONS

Input Pulse Levels GND to 3.0V
Input Rise/Fall Times 5ns
Input Timing Reference Levels 1.5V
Output Reference Levels 1.5V
Output Load See Figures 1 and 2

2804 tbl 08

OUT

255Ω

Figure 1. Output Load

480 Ω

30 pF*

*Including scope and jig.

OUT

255Ω

Figure 2. Output Load

CLZ, tCHZ, tOLZ. tOHZ, tWHZ, tOW)

(for t

480 Ω

5 pF*

7.5 4