Integrated Device Technology Inc IDT74FCT645TDB, IDT74FCT645TD, IDT74FCT645CTQB, IDT74FCT645CTQ, IDT74FCT645CTPYB Datasheet

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Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES AUGUST 1995
1995 Integrated Device Technology, Inc. 6.9 DSC-4611/4
1
DESCRIPTION:
The IDT octal bidirectional transceivers are built using an advanced dual metal CMOS technology. The FCT245T/ FCT2245T, FCT640T and FCT645T are designed for asyn­chronous two-way communication between data buses. The transmit/receive (T/R) input determines the direction of data
flow through the bidirectional transceiver. Transmit (active HIGH) enables data from A ports to B ports, and receive (active LOW) from B ports to A ports. The output enable (OE) input, when HIGH, disables both A and B ports by placing them in HIGH Z condition.
The FCT245T/FCT2245T and FCT645T transceivers have non-inverting outputs. The FCT640T has inverting outputs.
The FCT2245T has balanced drive outputs with current limiting resistors. This offers low ground bounce, minimal undershoot and controlled output fall times- reducing the need for external series terminating resistors. The FCT2xxxT parts are plug-in replacements for FCTxxxT parts.
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
IDT54/74FCT245T/AT/CT/DT - 2245T/AT/CT
IDT54/74FCT640T/AT/CT
IDT54/74FCT645T/AT/CT/DT
FEATURES:
• Common features:
– Low input and output leakage 1µA (max.) – CMOS power levels – True TTL input and output compatibility
– VOH = 3.3V (typ.) – V
OL = 0.3V (typ.)
– Meets or exceeds JEDEC standard 18 specifications – Product available in Radiation Tolerant and Radiation
Enhanced versions
– Military product compliant to MIL-STD-883, Class B
and DESC listed (dual marked)
– Available in DIP, SOIC, SSOP, QSOP, CERPACK
and LCC packages
• Features for FCT245T/FCT640T/FCT645T:
– Std., A, C and D speed grades – High drive outputs (-15mA IOH, 64mA IOL)
• Features for FCT2245T:
– Std., A and C speed grades – Resistor outputs (-15mA IOH, 12mA IOL Com.)
(-12mA IOH, 12mA IOL Mil.)
– Reduced system switching noise
2539 drw 01
PIN CONFIGURATIONS
FUNCTIONAL BLOCK DIAGRAM
2539 drw 02
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
LCC
TOP VIEW
5 6 7 8 9
10
A1 A2
A3
1 2 3 4
20 19 18 17 16 15 14 13
Vcc
12 11
T/R
B
1
A4 A5 A6 A7
OE
B2 B3 B4 B5 B6
GND B7
A0
B0
P20-1 D20-1
SO20-2
SO20-7*
SO20-8**
&
E20-1
INDEX
B0 B1 B2 B3 B4
A2 A3 A4 A5 A6
B7B6B
GND
A
7
A0A
1
Vcc
T/R
OE
15 14
5
18 17 16
5 6 7 8
4
L20-2
9
10 11 12 13
32
1
20 19
*FCT245T/2245T, FCT645T only.
**FCT245T/2245T, FCT640T
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
FCT245T/2245T, FCT645T are non-inverting options.
FCT640T is the inverting options.
A
B
0
0
T/R
OE
A
B
1
1
A
B
2
2
A
B
3
3
A
B
4
4
A
B
5
5
A
B
6
6
A
B
7
7
2539 drw 03
6.9 2
IDT54/74FCT245T/AT/CT/DT - 2245T/AT/CT, IDT54/74FCT640T/AT/CT, IDT54/74FCT645T/AT/CT/DT FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
FUNCTION TABLE
(2)
2539 tbl 01
2539 tbl 02
NOTES:
1. 640 is inverting from input to output.
2. H = HIGH Voltage Level L = LOW Voltage Level X = Don't Care
ABSOLUTE MAXIMUM RATINGS
(1)
CAPACITANCE (TA = +25°C, F = 1.0MHZ)
Symbol Rating Commercial Military Unit
VTERM
(2)
Terminal Voltage with Respect to GND
–0.5 to +7.0 –0.5 to +7.0 V
VTERM
(3)
Terminal Voltage with Respect to GND
–0.5 to
V
CC +0.5
–0.5 to
VCC +0.5
V
TA Operating
Temperature
0 to +70 –55 to +125 °C
TBIAS Temperature
Under Bias
–55 to +125 –65 to +135 °C
TSTG Storage
Temperature
–55 to +125 –65 to +150 °C
PT Power Dissipation 0.5 0.5 W IOUT DC Output
Current
–60 to +120 –60 to +120 mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT­INGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed V
CC by +0.5V unless otherwise noted.
2. Input and V
CC terminals only.
3. Outputs and I/O terminals only.
2539 lnk 03
Symbol Parameter
(1)
Conditions Typ. Max. Unit
CIN Input
Capacitance
VIN = 0V 6 10 pF
COUT Output
Capacitance
VOUT = 0V 8 12 pF
2539 lnk 04
NOTE:
1. This parameter is measured at characterization but not tested.
PIN DESCRIPTION
Pin Names Description
OE
Output Enable Input (Active LOW)
T/
R
Transmit/Receive Input
A0-A
7
Side A Inputs or 3-State Outputs
B0-B
7
Side B Inputs or 3-State Outputs
Inputs
OE
OE
T/
R
R
Outputs
L L Bus B Data to Bus A
(1)
L H Bus B Data to Bus B
(1)
H X High Z State
IDT54/74FCT245T/AT/CT/DT - 2245T/AT/CT, IDT54/74FCT640T/AT/CT, IDT54/74FCT645T/AT/CT/DT FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.9 3
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol Parameter Test Conditions
(1)
Min. Typ.
(2)
Max. Unit
VIH Input HIGH Level Guaranteed Logic HIGH Level 2.0 V VIL Input LOW Level Guaranteed Logic LOW Level 0.8 V II H Input HIGH Current
(4)
VCC = Max. VI = 2.7V ±1 µA
II L Input LOW Current
(4)
VI = 0.5V ±1 IOZH High Impedance Output Current VCC = Max. VO = 2.7V ±1 µA IOZL (3-State Output pins)
(4)
VO = 0.5V ±1
II Input HIGH Current
(4)
VCC = Max., VI = VCC (Max.) ±1 µA VIK Clamp Diode Voltage VCC = Min., IIN = –18mA –0.7 –1.2 V VH Input Hysteresis 200 mV ICC Quiescent Power Supply Current VCC = Max., VIN = GND or VCC 0.01 1 mA
OUTPUT DRIVE CHARACTERISTICS FOR FCT245T/640T/645T
Symbol Parameter Test Conditions
(1)
Min. Typ.
(2)
Max. Unit
VOH Output HIGH Voltage VCC = Min.
V
IN = VIH or VIL
IOH = –6mA MIL. I
OH = –8mA COM'L.
2.4 3.3 V
IOH = –12mA MIL. I
OH = –15mA COM'L.
2.0 3.0 V
VOL Output LOW Voltage VCC = Min.
V
IN = VIH or VIL
IOL = 48mA MIL. I
OL = 64mA COM'L.
0.3 0.55 V
IOS Short Circuit Current VCC = Max., VO = GND
(3)
–60 –120 –225 mA
OUTPUT DRIVE CHARACTERISTICS FOR FCT2245T
Symbol Parameter Test Conditions
(1)
Min. Typ.
(2)
Max. Unit
I
ODL
Output LOW Current VCC = 5V, V
IN
= V
IH or VIL, VOUT
= 1.5V
(3)
16 48 mA
I
ODH
Output HIGH Current VCC = 5V, V
IN
= V
IH
or V
IL,VOUT
= 1.5V
(3)
–16 –48 mA
V
OH
Output HIGH Voltage VCC = Min.
V
IN
= V
IH
or V
IL
IOH = –12mA MIL. I
OH
= –15mA COM'L.
2.4 3.3 V
V
OL
Output LOW Voltage VCC = Min.
V
IN
= V
IH
or V
IL
IOL = 12mA 0.3 0.50 V
2539 lnk 05
2539 lnk 06
2539 lnk 07
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is ±5µA at T
A = –55°C.
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