Integrated Device Technology Inc IDT7130LA100C, IDT7130LA100CB, IDT7130LA100F, IDT7130LA20P, IDT7130LA20PB Datasheet

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Integrated Device Technology, Inc.
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7130SA/LA IDT7140SA/LA
FEATURES
• High-speed access —Military: 25/35/55/100ns (max.) —Commercial: 25/35/55/100ns (max.) —Commercial: 20ns 7130 in PLCC and TQFP
• Low-power operation —IDT7130/IDT7140SA
Active: 550mW (typ.)Standby: 5mW (typ.)
—IDT7130/IDT7140LA
Active: 550mW (typ.)Standby: 1mW (typ.)
• MASTER IDT7130 easily expands data bus width to 16-or-more-bits using SLAVE IDT7140
• On-chip port arbitration logic (IDT7130 Only)
BUSY
output flag on IDT7130;
BUSY
input on IDT7140
• Interrupt flags for port-to-port communication
• Fully asynchronous operation from either port
• Battery backup operation–2V data retention (LA only)
• TTL-compatible, single 5V ±10% power supply
• Military product compliant to MIL-STD-883, Class B
• Standard Military Drawing #5962-86875
• Industrial temperature range (–40°C to +85°C) is avail­able, tested to military electrical specifications
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
DESCRIPTION
The IDT7130/IDT7140 are high-speed 1K x 8 Dual-Port Static RAMs. The IDT7130 is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual­Port RAM together with the IDT7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems. Using the IDT MAS­TER/SLAVE Dual-Port RAM approach in 16-or-more-bit memory system applications results in full-speed, error-free operation without the need for additional discrete logic.
Both devices provide two independent ports with sepa­rate control, address, and I/O pins that permit independent asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by
CE
, permits the on chip circuitry of each port to enter a very
low standby power mode.
Fabricated using IDT's CMOS high-performance tech­nology, these devices typically operate on only 550mW of power. Low-power (LA) versions offer battery backup data retention capability, with each Dual-Port typically consum­ing 200µW from a 2V battery.
The IDT7130/IDT7140 devices are packaged in 48-pin sidebraze or plastic DIPs, LCCs, or flatpacks, 52-pin PLCC, and 64-pin TQFP and STQFP. Military grade product is manufactured in compliance with the latest revision of MIL­STD-883, Class B, making it ideally suited to military tem­perature applications demanding the highest level of per­formance and reliability.
FUNCTIONAL BLOCK DIAGRAM
6.01 1
MILITARY AND COMMERCIAL TEMPERATURE RANGES OCTOBER 1996
©1996 Integrated Device Technology, Inc. DSC-2689/7
I/O
Control
Address Decoder
MEMORY
ARRAY
ARBITRATION
and
INTERRUPT
LOGIC
Address Decoder
I/O
Control
R/
W
L
CE
L
OE
L
BUSY
L
A9L
A0L
2689 drw 01
I/O0L- I/O7L
CE
L
OE
L
R/
W
L
INT
L
BUSY
R
I/O0R-I/O7R
A9R A0R
INT
R
CE
R
OE
R
(2)
(1,2) (1,2)
(2)
R/
W
R
CE
R
OE
R
R/
W
R
10
10
NOTES:
1. IDT7130 (MASTER):
BUSY
is open drain output and requires pullup resistor of 270. IDT7140 (SLAVE):
BUSY
is input.
2. Open drain output: requires pullup resistor of 270.
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.01 2
PIN CONFIGURATIONS
(1,2)
NOTES:
1. All Vcc pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. This text does not indicate orientation of the actual part-marking.
INDEX
IDT7130/40
PP64-1 & PN64-1
64-PIN STQFP
64-PIN TQFP TOP VIEW
(3)
8
9 10 11 12 13 14 15 16
1
2
3
4
5
6
7
46 45 44 43 42 41 40 39 38 37 36 35 34
47
48
33
I/O
6R
N/C
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
I/O
7R
OE
R
N/C N/C
I/O
2L
A
0L
OE
L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
N/C
N/C
2689 drw 05
17
18
19
20
32
31
30
29
28
27
26
25
24
23
22
21
49
50
51
52
63
62
61
605958
57
56
55
54
53
64
N/C
N/C
BUSY
R
INT
R
N/C
N/C
N/C
N/C
GND
N/C
N/C
GND
N/C
CE
L
R/
W
R
CE
R
V
CC
V
CC
R/
W
L
BUSY
L
INT
L
I/O
3L
I/O
4L
I/O
5L
I/O
6L
I/O
7L
I/O
0R
I/O
1R
I/O
2R
I/O
3R
I/O
4R
I/O
5R
IDT7130/40
L48-1
&
F48-1
48-PIN LCC/ FLATPACK
TOP VIEW
(3)
INDEX
65432148 47 46 45 44 43
19 20 21 22 23 25 26 27 28 29 3024
42 41 40 39 38 37 36 35 34 33 32 31
7 8 9 10 11 12 13 14 15 16 17 18
2689 drw 03
GND
CE
R
CE
L
OE
L
A0L
OE
R
A0R
A1R A2R
A3R
A4R A5R
A6R A7R A8R
A9R
I/O7R
I/O3L
A1L A2L A3L A4L A5L A6L A7L A8L
A9L I/O0L I/O1L I/O2L
INT
L
BUSY
L
R/
W
L
R/
W
R
BUSY
R
INT
R
VCC
I/O6R
I/O5R
I/O4R
I/O3R
I/O2R
I/O1R
I/O0R
I/O7L
I/O6L
I/O5L
I/O4L
IDT7130/40
J52-1
52-PIN PLCC TOP VIEW
(3)
INDEX
N/C
GND
N/C
N/C
CE
R
CE
L
OE
L
A
0L
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
N/C I/O
7R
46 45 44 43 42 41 40 39 38 37 36 35 34
I/O
3L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
8 9 10 11 12 13 14 15 16 17 18 19 20
474849505152
1
234567
33323130292827262524232221
2689 drw 04
INTLBUSY
L
R/
W
L
R/
W
R
BUSYRINT
R
I/O
6R
V
CC
I/O
5R
I/O
4R
I/O
3R
I/O
2R
I/O
1R
I/O
0R
I/O
7L
I/O
6L
I/O
5L
I/O
4L
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
148
47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
IDT7130/ IDT7140
P48-1
&
C48-2
DIP
TOP
VIEW
(3)
2689 drw 02
GND
I/O
6R
I/O
5R
I/O
4R
I/O
3R
I/O
2R
I/O
1R
I/O
0R
I/O
7L
I/O
6L
I/O
5L
I/O
4L
CE
R
CE
L
OE
L
A
0L
INT
L
BUSY
L
R/
W
L
R/
W
R
BUSY
R
INT
R
V
CC
OE
R
A
0R
A
1R
A
2R
A
3R
A
4R
A
5R
A
6R
A
7R
A
8R
A
9R
I/O
7R
I/O
3L
A
1L
A
2L
A
3L
A
4L
A
5L
A
6L
A
7L
A
8L
A
9L
I/O
0L
I/O
1L
I/O
2L
6.01 3
IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES
7130SA 7130LA 7140SA 7140LA
Symbol Parameter Test Conditions Min. Max. Max. Max. Unit
|l
Ll| Input Leakage VCC = 5.5V, 10 5 µA
Current
(1)
VIN = 0V to VCCIN = GND to VCC
|lLO| Output Leakage VCC = 5.5V, 10 5 µA
Current
(1)
CE
= VIH, VOUT = 0V to VCC
C
V
OL Output Low Voltage lOL = 4mA 0.4 0.4 V
(l/O0-l/O
7) lOL= 16mA
V
OL Open Drain Output lOL = 16mA 0.5 0.5 V
Low Voltage (
BUSY, INT
)
V
OH Output High Voltage lOH = -4mA 2.4 2.4 V
Symbol Parameter Conditions
(2)
Max. Unit
C
IN Input Capacitance VIN = 3dV 9 pF
C
OUT Output Capacitance VIN = 3dV 10 pF
2689 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Commercial Military Unit
V
TERM
(2)
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V with Respect to GND
T
A Operating 0 to +70 –55 to +125 °C
Temperature
T
BIAS Temperature –55 to +125 –65 to +135 °C
Under Bias
T
STG Storage –55 to +125 –65 to +150 °C
Temperature
I
OUT DC Output 50 50 mA
Current
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 0.5 for more than 25% of the cycle time or 10ns maximum, and is limited to
< 20mA for the period of VTERM > Vcc
+ 0.5V.
2689 tbl 01
RECOMMENDED DC OPERATING CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
V
CC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V V
IH Input High Voltage 2.2 6.0
(2)
V
V
IL Input Low Voltage –0.5 0.8 V
NOTES:
1. V
IL (min.) > -1.5V for pulse width less than 10ns.
2. V
TERM must not exceed Vcc + 0.5V.
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade Temperature GND V
CC
Military –55°C to +125°C 0V 5.0V ± 10% Commercial 0°C to +70°C 0V 5.0V ± 10%
2689 tbl 03
(1)
DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(VCC = 5.0V ± 10%)
NOTES:
1. This parameter is determined by device characterization but is not production tested.
2. 3dv references the interpolated capacitance when the input and
output signals switch from 0V to 3V or from 3V to 0V.
3. 11pF max. for other packages.
2689 tbl 05
CAPACITANCE
(1)
(TA = +25°C, f = 1.0MHz) TQFP ONLY
(3)
NOTE: 2689 tbl 04
1. At Vcc < 2.0V leakages are undefined.
IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.01 4
DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1,6)
(VCC = 5.0V ± 10%)
7130X20
(2)
7130X25
(3)
7130X35 7130X55 7130X100
7140X25
(3)
7140X35 7140X55 7140X100
Symbol Parameter Test Conditions Version Typ. Max. Typ. Max. Typ. Max. Typ.Max. Typ. Max. Unit
I
CC Dynamic Operating
CE
L and CER = VIL, MIL. SA 110 280 110 230 110 190 110 190 mA
Current (Both Ports Outputs open, LA 110 220 110 170 110 140 110 140 Active) f = f
MAX
(4)
COM'L. SA 110 250 110 220 110 165 110 155 110 155
LA 110 200 110 170 110 120 110 110 110 110
I
SB1 Standby Current
CE
L and CER = VIH, MIL. SA 30 80 25 80 20 65 20 65 mA
(Both Ports - TTL f = f
MAX
(4)
LA 30 60 25 60 20 45 20 45
Level Inputs) COM'L. SA 30 65 30 65 25 65 20 65 20 55
LA 30 45 30 45 25 45 20 35 20 35
I
SB2 Standby Current
CE
"A" = VIL and MIL. SA 65 160 50 150 40 125 40 125 mA
(One Port - TTL
CE
"B" = VIH
(7)
LA 65 125 50 115 40 90 40 90
Level Inputs) Active Port Outputs COM'L. SA 65 165 65 150 50 125 40 110 40 110
Open, f = f
MAX
(4)
LA 65 125 65 115 50 90 40 75 40 75
I
SB3 Full Standby Current
CE
L and MIL. SA 1.0 30 1.0 30 1.0 30 1.0 30 mA
(Both Ports - All
CE
R > VCC -0.2V, LA 0.2 10 0.2 10 0.2 10 0.2 10
CMOS Level Inputs V
IN > VCC -0.2V or COM'L. SA 1.0 15 1.0 15 1.0 15 1.0 15 1.0 15
V
IN < 0.2V,f = 0
(5)
LA 0.2 5 0.2 5 0.2 4 0.2 4 0.2 4
I
SB4 Full Standby Current
CE
"A" < 0.2V and MIL. SA 60 155 45 145 40 110 40 110 mA
(One Port - All
CE
"B" > VCC -0.2V
(7)
LA 60 115 45 105 40 85 40 80
CMOS Level Inputs) V
IN > VCC -0.2V or COM'L. SA 60 155 60 145 45 110 40 100 40 95
V
IN < 0.2V, LA 60 115 60 105 45 85 40 70 40 70
Active Port Outputs Open, f = f
MAX
(4)
NOTES: 2689 tbl 06
1. 'X' in part numbers indicates power rating (SA or LA).
2. Com'l Only, 0°C to +70°C temperature range. PLCC and TQFP packages.
3. Not available in DIP packages.
4. At f = f
Max, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC TEST CONDITIONS”
of input levels of GND to 3V.
5. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
6. Vcc = 5V, T
A=+25°C for Typ and is not production tested. Vcc DC = 100 mA (Typ.)
7. Port "A" may be either left or right port. Port "B" is opposite from port "A".
Symbol Parameter Min. Typ.
(1)
Max. Unit
V
DR VCC for Data Retention 2.0 V
I
CCDR Data Retention Current 100 4000 µA
100 1500 µA
t
CDR Chip Deselect to Data 0 ns
Retention Time
t
R Operation Recovery tRC ——ns
Time
DATA RETENTION CHARACTERISTICS (LA Version Only)
lDT7130LA/IDT7140LA
Mil. Com’l.
VCC = 2.0V,
CE
> VCC -0.2V
V
IN > VCC -0.2V or VIN < 0.2V
(3)
(3)
Test Conditions
2689 tbl 07
(2)
NOTES:
1. V
CC = 2V, TA = +25°C, and is not production tested.
2. t
RC = Read Cycle Time
3. This parameter is guaranteed but not production tested.
6.01 5
IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES
5V
1250
(*100pF for 55 and 100ns versions)
30pF*
775
DATA
OUT
5V
1250
775
5pF*
DATA
OUT
2689 drw 07
5V
270
30pF*
BUSY
or
INT
*
100pF for 55 and 100ns versions
DATA RETENTION WAVEFORM
AC TEST CONDITIONS
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load
GND to 3.0V
5ns
1.5V
1.5V
Figures 1, 2, and 3
2689 tbl 08
V
CC
CE
4.5V 4.5V
DATA RETENTION MODE
t
CDR
t
R
V
IH
V
IH
V
DR
V
DR
2.0V
2692 drw 06
Figure 3.
BUSYBUSY
BUSYBUSY
BUSY
and
INTINT
INTINT
INT
AC Output Test Load
Figure 1. Output Test Load
Figure 2. Output Test Load
(for t
HZ, tLZ, tWZ, and tOW)
* including scope and jig
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