Integrated Device Technology Inc IDT71256SA70P, IDT71256SA70PZ, IDT71256SA70TP, IDT71256SA70Y Datasheet

Integrated Device Technology, Inc.
FEATURES:
• 32K x 8 CMOS static RAM
• Equal access and cycle times
-- Commercial: 70ns
• One Chip Select plus one Output Enable pin
• Bidirectional data inputs and outputs directly TTL-compatible
• Available in 28-pin 30 mil Plastic SOJ, 28-pin 300 mil Plastic Dip, 28-pin 300 mil TSOP Type I, and 28-pin 600 mil Plastic Dip.
DESCRIPTION:
The IDT71256SA is a 262,144-bit medium-speed Static RAM organized as 32K x 8. It is fabricated using IDT’s high­perfomance, high-reliability CMOS technology. This state-of­the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for your memory needs.
All bidirectional inputs and outputs of the IDT71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
The IDT71256SA is packaged in a 28-pin 300 mil Plastic SOJ, 28-pin 300 mil Plastic Dip, 28-pin 300 mil TSOP Type I and 28-pin 600 mil Plastic Dip.
FUNCTIONAL BLOCK DIAGRAM
1
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
COMMERCIAL TEMPERATURE RANGE JULY 1996
1996 Integrated Device Technology, Inc. 3567/1
A
ADDRESS
DECODER
262,144 BIT
MEMORY ARRAY
I/O CONTROL
3567 drw 01
INPUT
DATA
CIRCUIT
WE
CS
V
CC
GND
0
A14
I/O 0
I/O
7
CONTROL
CIRCUIT
OE
CMOS STATIC RAM 256K (32K x 8-BIT)
IDT71256SA70
IDT71256SA70 CMOS STATIC RAM 256K (32K x 8-BIT) COMMERCIAL TEMPERATURE RANGES
2
PIN CONFIGURATION
CAPACITANCE
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol Parameter
(1)
Conditions Max. Unit
C
IN Input Capacitance VIN = 3dV 11 pF
C
I/O I/O Capacitance VOUT = 3dV 11 pF
NOTE: 3567 tbl 03
1. This parameter is guaranteed by device characterization, but not prod-
uction tested.
3567 tbl 05
DC ELECTRICAL CHARACTERISTICS
VCC = 5.0V ± 10%
IDT71256SA
Symbol Parameter Test Condition Min. Max. Unit
|I
LI| Input Leakage Current VCC = Max., VIN = GND to VCC — 5 µA
|I
LO| Output Leakage Current VCC = Max.,
CS
= VIH, VOUT = GND to VCC — 5 µA
V
OL Output Low Voltage IOL = 8mA, VCC = Min. — 0.4 V
V
OH Output High Voltage IOH = –4mA, VCC = Min. 2.4 — V
TRUTH TABLE
(1,2)
CSCSOEOEWEWE I/O Function
L L H DATA
OUT Read Data
L X L DATA
IN Write Data
L H H High-Z Outputs Disabled
H X X High-Z Deselected — Standby (I
SB)
V
HC X X High-Z Deselected — Standby (ISB1)
NOTES: 3567 tbl 04
1. H = VIH, L = VIL, x = Don't care.
2. V
LC = 0.2V, VHC = VCC –0.2V.
3. Other inputs V
HC or VLC.
(3)
RECOMMENDED DC OPERATING CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
V
CC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V V
IH Input High Voltage 2.2 — VCC+0.5 V
V
IL Input Low Voltage –0.5
(1)
— 0.8 V
NOTE: 3567 tbl 01
1. VIL (min.) = –1.5V for pulse width less than 10ns, once per cycle.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Com’l. Unit
V
TERM
(2)
Terminal Voltage –0.5 to +7.0 V with Respect to GND
T
A Operating 0 to +70 °C
Temperature
T
BIAS Temperature –55 to +125 °C
Under Bias
T
STG Storage –55 to +125 °C
Temperature
P
T Power 1.0 W
Dissipation
I
OUT DC Output 50 mA
Current
NOTES: 3567 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3567 drw 02
5 6 7 8
9 10 11 12
GND
1
2
3
4
24 23
22 21
20 19
18 17
SO28-5
P28-1 P28-2
13 14
28 27 26 25
A7 A6 A5 A4 A3 A2 A1
A0 I/O0 I/O1 I/O2
VCC
A14
WE
A
13
A8
A10
A11
OE
A
12
CS
I/O
7
I/O6 I/O5 I/O4 I/O3
A9
16 15
SOJ/DIP
TOP VIEW
3567 drw 03
22 23 24 25 26 27 28 1 2 3 4 5
7
6
21 20 19 18 17 16 15 14 13 12 11 10
9 8
A10
CS
I/O
7
I/O6 I/O5 I/O4 I/O3 GND I/O
2
I/O1 I/O0 A0 A1 A2
SO28-8
OE
A
11
A9 A8
A13
A14
A7 A6 A5 A4 A3
A12
WE
V
CC
TSOP
TOP VIEW
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