Integrated Device Technology Inc IDT71256SA35PE, IDT71256SA45PE, IDT71256SA70PE, IDT71256SA15PE, IDT71256SA20PE Datasheet

Integrated Device Technology, Inc.

COMMERCIAL TEMPERATURE RANGE JULY 1996

1996 Integrated Device Technology, Inc. 3605/-

CMOS STATIC RAM
256K (32K x 8-BIT)
IN PE PACKAGES

IDT71256SA

FEATURES:

• 32K x 8 CMOS static RAM

• Equal access and cycle times
— Commercial: 15/20/25/35/45/70ns

• One Chip Select plus one Output Enable pin

• Bidirectional data inputs and outputs directly

TTL-compatible

• Low power consumption via chip deselect

• Available in 28-pin 330 mil Plastic SOIC.

DESCRIPTION:

The ID71256SA is a 262,144-bit Static RAM organized as
32K x 8. It is fabricated using IDT’s high-perfomance, high­reliability CMOS technology. This state-of-the-art technology,
combined with innovative circuit design techniques, provides
a cost-effective solution for your memory needs.

All bidirectional inputs and outputs of the IDT71256SA are
TTL-compatible and operation is from a single 5V supply.
Fully static asynchronous circuitry is used, requiring no clocks
or refresh for operation.

The IDT71256SA is packaged in a 28-pin 330 mil Plastic
SOIC.

FUNCTIONAL BLOCK DIAGRAM

1

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

A

ADDRESS

DECODER

262,144 BIT

MEMORY ARRAY

I/O CONTROL

3605 drw 01

INPUT

DATA

CIRCUIT

WE

CS

V

CC

GND

0

A

14

I/O

0

I/O

7

CONTROL

CIRCUIT

OE

2

IDT71256SA
CMOS STATIC RAM 256K (32K x 8-BIT) IN PE PACKAGES COMMERCIAL TEMPERATURE RANGE

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Rating Com’l. Unit

V

TERM

(2)

Terminal Voltage –0.5 to +7.0 V
with Respect
to GND

T

A Operating 0 to +70 °C

Temperature

T

BIAS Temperature –55 to +125 °C

Under Bias

T

STG Storage –55 to +125 °C

Temperature

P

T Power 1.0 W

Dissipation

I

OUT DC Output 50 mA

Current

NOTES: 3605 tbl 02

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.

2. V

TERM must not exceed VCC + 0.5V.

PIN CONFIGURATIONS

CAPACITANCE

(TA = +25°C, f = 1.0MHz, SOJ package)

Symbol Parameter

(1)

Conditions Max. Unit

C

IN Input Capacitance VIN = 3dV 11 pF

C

I/O I/O Capacitance VOUT = 3dV 11 pF

NOTE: 3605 tbl 03

1. This parameter is guaranteed by device characterization, but not prod-

uction tested.

RECOMMENDED DC OPERATING
CONDITIONS

Symbol Parameter Min. Typ. Max. Unit

V

CC Supply Voltage 4.5 5.0 5.5 V

GND Supply Voltage 0 0 0 V
V

IH Input High Voltage 2.2 — VCC+0.5 V

V

IL Input Low Voltage –0.5

(1)

— 0.8 V

NOTE: 3605 tbl 01

1. VIL (min.) = –1.5V for pulse width less than 10ns, once per cycle.

TRUTH TABLE

(1,2)

CSCSOEOEWEWE I/O Function

L L H DATA

OUT Read Data

L X L DATA

IN Write Data

L H H High-Z Outputs Disabled

H X X High-Z Deselected — Standby (I

SB)

V

HC X X High-Z Deselected — Standby (ISB1)

NOTES: 3605 tbl 04

1. H = VIH, L = VIL, x = Don't care.

2. V

LC = 0.2V, VHC = VCC –0.2V.

3. Other inputs ≥V

HC or ≤VLC.

(3)

3605 tbl 05

DC ELECTRICAL CHARACTERISTICS

VCC = 5.0V ± 10%

IDT71256SA

Symbol Parameter Test Condition Min. Max. Unit

|I

LI| Input Leakage Current VCC = Max., VIN = GND to VCC — 5 µA

|I

LO| Output Leakage Current VCC = Max.,

CS

= VIH, VOUT = GND to VCC — 5 µA

V

OL Output Low Voltage IOL = 8mA, VCC = Min. — 0.4 V

V

OH Output High Voltage IOH = –4mA, VCC = Min. 2.4 — V

3605 drw 02

5
6
7
8

9
10
11
12

GND

1

2

3

4

24
23

22
21

20
19

18
17

SO28-3

13
14

28
27
26
25

A

7

A

6

A

5

A

4

A

3

A

2

A

1

A

0

I/O

0

I/O

1

I/O

2

V

CC

A

14

WE

A

13

A

8

A

10

A

11

OE

A

12

CS

I/O

7

I/O

6

I/O

5

I/O

4

I/O

3

A

9

16
15

SOIC

TOP VIEW

3

IDT71256SA
CMOS STATIC RAM 256K (32K x 8-BIT) IN PE PACKAGES COMMERCIAL TEMPERATURE RANGE

Figure 2. AC Test Load

(for t

CLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)

Figure 1. AC Test Load

*Including jig and scope capacitance.

AC TEST CONDITIONS

Input Pulse Levels GND to 3.0V
Input Rise/Fall Times 3ns
Input Timing Reference Levels 1.5V
Output Reference Levels 1.5V
AC Test Load See Figures 1 and 2

3605 tbl 07

3605 drw 03

480Ω

255Ω

30pF*

DATA

OUT

5V

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

(1)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC–0.2V)

Symbol Parameter 71256SA35 71256SA45 71256SA70 Unit

I

CC Dynamic Operating Current 140 135 130 mA

CS

≤ V

IL, Outputs Open, VCC = Max., f = fMAX

(2)

ISB Standby Power Supply Current (TTL Level) 30 30 20 mA

CS

≥ V

IH, Outputs Open, VCC = Max., f = fMAX

(2)

ISB1 Standby Power Supply Current (CMOS Level) 15 15 15 mA

CS

≥ V

HC, Outputs Open, VCC = Max., f = 0

(2)

VIN ≤ VLC or VIN ≥ VHC

NOTES: 3605 tbl 06

1. All values are maximum guaranteed values.

2. f

MAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .

DC ELECTRICAL CHARACTERISTICS

(1)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC–0.2V)

Symbol Parameter 71256SA15 71256SA20 71256SA25 Unit

I

CC Dynamic Operating Current 150 145 145 mA

CS

≤ V

IL, Outputs Open, VCC = Max., f = fMAX

(2)

ISB Standby Power Supply Current (TTL Level) 40 40 40 mA

CS

≥ V

IH, Outputs Open, VCC = Max., f = fMAX

(2)

ISB1 Standby Power Supply Current (CMOS Level) 15 15 15 mA

CS

≥ V

HC, Outputs Open, VCC = Max., f = 0

(2)

VIN ≤ VLC or VIN ≥ VHC

3605 drw 04

480

Ω

255

Ω

5pF*

DATA

OUT

5V