IDT IDT71016 User Manual
A
,
CMOS Static RAM
1 Meg (64K x 16-Bit)
IDT71016
Features
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64K x 16 advanced high-speed CMOS Static RAM
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Equal access and cycle times
– Commercial and Industrial: 12/15/20ns
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One Chip Select plus one Output Enable pin
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Bidirectional data inputs and outputs directly TTLcompatible
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Low power consumption via chip deselect
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Upper and Lower Byte Enable Pins
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Commercial and industrial product available in 44-pin
Plastic SOJ package and 44-pin TSOP package
Functional Block Diagram
OE
0-A15
Output
Enable
Buffer
Address
Buffers
Row / Column
Decoders
Description
The IDT71016 is a 1,048,576-bit high-speed Static RAM organized
as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with
innovative circuit design techniques, provides a cost-effective solution for
high-speed memory needs.
The IDT71016 has an output enable pin which operates as fast as 7ns,
with address access times as fast as 12ns. All bidirectional inputs and
outputs of the IDT71016 are TTL-compatible and operation is from a single
5V supply. Fully static asynchronous circuitry is used, requiring no clocks
or refresh for operation.
The IDT71016 is packaged in a JEDEC standard 44-pin Plastic SOJ
and 44-pin TSOP Type II.
I/O 15
CS
WE
BHE
BLE
Chip
Enable
Buffer
Write
Enable
Buffer
Byte
Enable
Buffers
64Kx16
Memory
Array
Sense
16
Amps
and
Write
Drivers
8
8
High
Byte
I/O
Buffer
Low
Byte
I/O
Buffer
8
I/O 8
I/O 7
8
I/O 0
3210drw01
JANUARY 2004
©2004 Integrated Device Technology, Inc.
1
DSC-3210/8
IDT71016, CMOS Static RAM
I
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1 Meg (64K x 16-bit) Commercial and Industrial Temperature Ranges
Pin Configurations
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
SO44-1
SO44-2
A4
A3
A2
A1
A0
CS
/O 0
/O 1
/O 2
/O 3
V
CC
V
/O 4
/O 5
/O 6
/O 7
WE
A15
A14
A13
A12
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BLE
I/O 15
I/O 14
I/O 13
I/O 12
SS
V
V
CC
I/O 11
I/O 10
I/O 9
I/O 8
NC
A8
A9
A10
A11
NC
Pin Descriptions
A0 - A
15
CS
WE
OE
High Byte Enable Input
Low Byte Enable Input
Data Inp ut/ Outp ut I/O
I/O
BHE
BLE
0
- I/O
V
V
15
CC
SS
Address Inputs Input
Chip Select Input
Write Enab le Input
Outp ut En ab le Inp ut
5.0V Po wer Pwr
Ground Gnd
3 2 10 t b l 01
3210drw 02
SOJ/TSOP
Top View
Truth Table
CS OE WE BLE BHE
H X X X X High-Z High-Z Deselected - Standby
LLHLH DATAOUT High-Z Low Byte Read
L L H H L Hig h-Z DATAO UT Hig h B y te Re ad
L L H L L DATAO UT DATAO UT` Word R ea d
L X L L L DATAIN DATAIN Wo rd Wri te
L X L L H DATAIN High-Z Low Byte Write
L X L H L High-Z DATAIN High Byte Write
L H H X X High-Z High-Z Outputs Disabled
L X X H H High-Z High-Z Outputs Disabled
NOTE:
1. H = VIH, L = VIL, X = Don't care.
(1)
0
- I/O
I/O
7
I/O8 - I/ O
15
Function
3210 tbl 02
6.422
IDT71016, CMOS Static RAM
1 Meg (64K x 16-bit) Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings
Symbol Rating Value Unit
(2)
V
TERM
A
T
T
BIAS
STG
T
T
P
I
OUT
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. V
TERM must not exceed VCC + 0.5V.
Terminal Voltage with
-0.5 to +7.0 V
Respect to GND
Operating Temperature 0 to +70
Temperature
-55 to + 125
Under Bias
Storage
-55 to + 125
Temperature
Pow er D issipation 1. 25 W
DC Output Current 50 m A
(1)
o
C
o
C
o
C
3210 tbl 03
Recommended Operating
Temperature and Supply Voltage
Grade Temperature GND V
Com m ercial 0° C to +70° C 0V 5.0V ± 10%
Indust rial –40°C to +85° C 0V 5.0V ± 10%
CC
3210 tbl 0 4
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ. Max. Unit
CC
Supply Voltage 4.5 5. 0 5.5 V
V
GND Ground 0 0 0 V
IH
Input High Voltage 2.2
V
IL
Input Low Voltage -0.5
V
NOTE:
1. VIL (min.) = –1.5V for pulse width less than tRC/2, once per cycle.
____
V
DD
+0.5 V
(1)
____
0.8 V
3210 tbl 05
Capacitance
(TA = +25° C, f = 1.0MHz, SOJ Package)
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Input Capacitance VIN = 3dV 6 pF
I/O
I/O Capacitance V
C
OUT
= 3dV 7 pF
NOTE:
1. This parameter is guaranteed by device characterization, but not production
tested.
DC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Range)
Symbol Parameter Test Conditions Min. Max. Unit
LI
| Input Leak age Current VCC = Max., VIN = GND to V
|I
LO
| Output Leakage Current VCC = Max., CS = VIH, V
|I
OL
V
OH
V
Output Low Voltage IOL = 8mA, VCC = Min.
Output H igh Voltage IOH = -4mA, VCC = M in. 2.4
DC Electrical Characteristics
(1)
CC
OUT
= GND to V
CC
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC–0.2V)
71016S12 71016S15 71016S20
Symbol Parameter Com'l. Ind. Com'l. Ind. Com'l. Ind. Unit
I
CC
I
SB
Dy namic O perating Current
VIL, Outputs Open, VCC = Max., f = f
CS <
Standby Power Supply Current (TTL Level)
VIH, Outputs Open, VCC = Max., F = f
CS >
MAX
MAX
(2)
(2)
210 210 180 180 170 170 mA
60 60 50 50 45 45 mA
___
___
___
5µA
5µA
0.4 V
___
3210 tbl 06
V
3210 tbl 07
SB1
I
Standby Pow er Supply C urrent (CM OS Lev el)
VHC, Out puts Open, VCC = Max., f = 0
CS >
VIN < VLC or VIN > V
HC
(2)
10 10 10 10 10 10 mA
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
6.42
3
3210 tbl 08
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