Dual chip enables allow for depth expansion without
external logic
Functional Block Diagram
IDT7008S/L
◆
IDT7008 easily expands data bus width to 16 bits or
more using the Master/Slave select when cascading more
than one device
◆
M/S = VIH for BUSY output flag on Master,
M/S = V
◆
◆
◆
◆
◆
◆
◆
IL for BUSY input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 5V (±10%) power supply
Available in 84-pin PGA, 84-pin PLCC, and a 100-pin TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
R/
W
L
CE
0L
CE
1L
OE
L
I/O
0-7L
(1,2)
BUSY
L
A
15L
A
0L
SEM
L
(2)
INT
L
NOTES:
1. BUSY is an input as a Slave (M/S = V
2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).
IL) and an output when it is a Master (M/S = VIH).
Control
1616
I/O
64Kx8
MEMORY
ARRAY
7008
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
(1)
M/
S
1
I/O
Control
Address
Decoder
CE
0R
1R
CE
OE
R
R
R/
W
R
R/
W
CE
0R
CE
1R
OE
R
3198 drw 01
I/O
0-7R
(1,2)
BUSY
R
15R
A
A
0R
R
SEM
(2)
INT
R
MAY 2000
DSC 3198/6
IDT7008S/L
,
High-Speed 64K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Description
The IDT7008 is a high-speed 64K x 8 Dual-Port Static RAM. The
IDT7008 is designed to be used as a stand-alone 512K-bit Dual-Port RAM
or as a combination MASTER/SLAVE Dual-Port RAM for 16-bit-or-more
word systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach
in 16-bit or wider memory system applications results in full-speed, errorfree operation without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by the chip enables (CE
0 and CE1) permit the on-chip
circuitry of each port to enter a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 750mW of power.
The IDT7008 is packaged in a 84-pin Ceramic Pin Grid Array (PGA),
a 84-pin Plastic Leadless Chip Carrier (PLCC) and a 100-pin Thin Quad
Flatpack (TQFP).
1. This text does not indicate orientation of the actual part marking.
2. All Vcc pins must be connected to power supply.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. All GND pins must be connected to ground supply.
6.42
3
IDT7008S/L
High-Speed 64K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
(1,2,3)
Pin Configurations
(con't)
63616058555451484645
11
66
10
67
09
69
08
72
BUSY
07
75
06
BUSY
76
INT
05
79
04
81
03
82
02
84346915131618
01
A
A
A
A
A
A
A
A
A
9R
7R
64
62
A
6R
4R
65
A
5R
3R
68
A
2R
1R
73
71
R
R
INT
74
70
A
0R
L
78
77
L
NC
80
A
2L
1L
83
A
3L
5L
12578
A
7L
4L
A
9L
6L
A
A
10R
5956495040
A
A
8R
M/
S
GND
A
0L
A
A
8L
A
A
10L
ABC DEF GHJK L
INDEX
NOTES:
1. All Vcc pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately 1.12 in x 1.12 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part marking.
A
15R
12R
A
14R
11R
575352
A
13R
84-Pin PGA
Top View
A
13L
A
14L
11L
A
15L
12L
NC
NC
0R
CE
CE
1R
NC
GND
IDT7008G
(4)
G84-3
(5)
11
12
NC
Vcc
10
141720
0L
CE
NC
CE
NC
1L
Pin Names
Left PortRight PortNames
R
SEM
4744
R/
R
W
R/
L
W
L
SEM
R
OE
GND
3335
I/O
0R
3231
GND
2829
GND
GND
L
OE
GND
43
NC
41
I/O
7R
38
I/O4RI/O
I/O
2R
Vcc
I/O1
L
26
I/O
3L
23
I/O
6L
2224
I/O
7L
1921
GND
3198 drw 04
42
NC
I/O
6R
39
I/O
5R
37
3R
34
I/O
1R
36
Vcc
30
I/O
0L
27
I/O
2L
25
I/O
4L
I/O
5L
NC
,
4
CE
0L
W
R/
OE
L
A0L - A
0L
I/O
SEM
INT
L
BUS Y
, CE
L
- I/O
L
L
15L
1L
7L
CE
W
R/
OE
A0R - A
I/O0R - I/O
SEM
INT
BUS Y
S
M/
CC
V
0R
, CE
R
R
15R
R
R
R
GNDGround
1R
Chip Enables
Read /Wri te En able
Output Enable
Address
7R
Dat a In p ut/ O ut p ut
Semaphore Enable
Interr up t Flag
Busy Flag
Master or Slave Select
Power
3198 tbl 01
IDT7008S/L
High-Speed 64K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Truth Table I: Chip Enable
1
CECE
V
L
< 0. 2V>VCC -0.2VPo rt Se lec te d (CMOS Ac tive )
V
H
>
VCC -0.2VXPo rt Des e lec te d (CMOS Inactive )
0
IL
IH
XV
CE
IH
V
XPort Deselected (TTL Inactive)
IL
(1)
Mode
Port Selected (TTL Active)
Port Deselected (TTL Inactive)
X<
NOTES:
1. Chip Enable references are shown above with the actual CE
0.2VPo rt Deselected (CMOS Inactive)
0 and CE1 levels, CE is a reference only.
Truth Table II: Non-Contention Read/Write Control
(1)
Inputs
(2)
W
CE
R/
OESEM
HXXHHigh-ZDese le c ted : P o wer-Do wn
LLXHDATAINWrite to me mory
LHLHDATA
XXHXHig h-ZOutputs Dis abl e d
NOTES:
0L – A15L≠ A0R – A15R.
1. A
2. Refer to Chip Enable Truth Table.
Truth Table III: Semaphore Read/Write Control
InputsOutputs
(2)
W
R/
CE
HHLLDATA
OESEM
Outputs
I/O
0-7
I/O
OUT
0-7
OUT
Read me mory
Read Semaphore Flag Data Out
Mode
(1)
Mode
3198 tbl 02
3198 t bl 03
↑
H
LXXL
NOTES:
1. There are eight semaphore flags written to via I/O
2. Refer to Chip Enable Truth Table.
XLDATAINWrite I/ O0 into Semaphore Flag
______
Not Al lo wed
0 and read from all the I/Os (I/O0-I/O7). These eight semaphore flags are addressed by A0-A2.
6.42
5
3198 tbl 04
IDT7008S/L
High-Speed 64K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
SymbolRatingCommercial
(2)
V
TERM
Terminal Voltage
with Re s p e ct
to G ND
T
BIAS
T emperature
Unde r Bias
T
I
OUT
STG
Storage
T emperature
DC Output Current5050mA
NOTES:
& Industrial
-0.5 to +7.0-0.5 to +7.0V
-55 to +125-65 to +135oC
-65 to +150-65 to +150oC
(1)
MilitaryUnit
3198 t bl 05
Recommended DC Operating
Conditions
SymbolParameterMin.Typ.Max.Unit
CC
V
Sup p ly Vo ltag e4.55. 05.5V
GNDGround000V
IH
V
Inp u t Hi g h Vo l ta g e2. 2
IL
V
Input Lo w Voltag e-0.5
NOTES:
1. V
IL > -1.5V for pulse width less than 10ns.
TERM must not exceed Vcc + 10%.
2. V
____
(1)
____
(2)
6.0
0.8V
3198 tbl 07
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
2. V
maximum, and is limited to
< 20mA for the period of VTERM > Vcc + 10%.
Maximum Operating Temperature
and Supply Voltage
Grade
Ambient
TemperatureGNDVcc
(1,2)
Capacitance
(TA = +25°C, f = 1.0mhz) (TQFP Only)
)1(
ecnaticapaCtupnIV
ecnaticapaCtuptuOV
C
NI
C
TUO
lobmySretemaraP
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
snoitidnoC
NI
Vd3=9Fp
TUO
Vd3=01Fp
)2(
.xaMtinU
Military-55OC to+1 25OC0V 5.0V + 10%
O
Commercial0
C to +7 0OC0V 5.0V + 10%
Industrial-40OC to +8 5OC0V 5.0V + 10%
NOTES:
1. This is the parameter T
A. This is the "instant on" case tempreature.
3198 tbl 06
2. Industrial Temperature: for other speeds, packages and powers contact your
sales office.
V
80lbt8913
DC Electrical Characteristics Over the Operating
(2)
Temperature and Supply Voltage Range
SymbolParameterTest Conditions
|ILI|Input Leak ag e Current
|I
Output Leak age Current
LO
|
V
Output Low Voltag eIOL = 4mA
OL
V
Output High Vol tageIOH = -4mA2.4
OH
NOTES:
1. At Vcc
< 2.0V, input leakages are undefined.
2. Refer to Chip Enable Truth Table.
(1)
VCC = 5.5V, VIN = 0V to V
CE
= V
, V
= 0V to V
IH
OUT
CC
CC
6
(VCC = 5.0V ± 10%)
7008S7008L
___
___
___
10
10
0.4
___
2.4
UnitMin.Max.Min.Max.
___
___
___
5µA
5µA
0.4V
___
V
3198 tbl 09
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