Integrated Device Technology Inc IDT6167LA100DB, IDT6167LA100PB, IDT6167LA100YB, IDT6167LA20PB, IDT6167LA20Y Datasheet

Integrated Device Technology, Inc.

CMOS STATIC RAM
16K (16K x 1-BIT)

IDT6167SA

IDT6167LA

FEATURES:

• High-speed (equal access and cycle time)
— Military: 15/20/25/35/45/55/70/85/100ns (max.)
— Commercial: 15/20/25/35ns (max.)

• Low power consumption

• Battery backup operation — 2V data retention voltage
(IDT6167LA only)

• Available in 20-pin CERDIP and Plastic DIP, and 20-pin
SOJ

• Produced with advanced CMOS high-performance
technology

• CMOS process virtually eliminates alpha particle soft­error rates

• Separate data input and output

• Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The lDT6167 is a 16,384-bit high-speed static RAM orga­nized as 16K x 1. The part is fabricated using IDT’s high­performance, high reliability CMOS technology.

FUNCTIONAL BLOCK DIAGRAM

A0

Access times as fast as 15ns are available. The circuit also

offers a reduced power standby mode. When CS goes HIGH,

the circuit will automatically go to, and remain in, a standby
mode as long as CS remains HIGH. This capability provides
significant system-level power and cooling savings. The low­power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1µW
operating off a 2V battery.

All inputs and the output of the IDT6167 are TTL-compat­ible and operate from a single 5V supply, thus simplifying
system designs.

The IDT6167 is packaged in a space-saving 20-pin, 300 mil
Plastic DIP or CERDIP, Plastic 20-pin SOJ, providing high
board-level packing densities.

Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.

A13

DIN

CS

WE

CONTROL

LOGIC

ADDRESS

DECODE

16,384-BIT

MEMORY ARRAY

I/O CONTROL

VCC
GND

DOUT

2981 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES MARCH 1996

1996 Integrated Device Technology, Inc. 2981/5
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

5.2
1

IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

V

20
19
18
17
16
15
14
13
12
11

CC
13

A
A

12
11

A
A

10
9

A
A

8

A

7

D

IN

CS

2981 drw 02

D

OUT

WE

GND

0

A

1

A

1

2

A

2

3

A

3

A

4

A

5

A

6

P20-1,

4

D20-1,

5
6

&

S020-1

7
8

9
10

DIP/SOJ

TOP VIEW

PIN DESCRIPTIONS

A0–A13 Address Inputs

CS
WE

Chip Select

Write Enable
VCC Power
DIN DATAIN
DOUT DATAOUT
GND Ground

2981 tbl 01

TRUTH TABLE

Mode

(1)

CSCSWE

WE

Output Power

Standby H X High-Z Standby

Read L H DATAOUT Active
Write L L High-Z Active

NOTE: 2981 tbl 02

1. H = VIH, L = VIL, X = Don't Care.

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

Grade Temperature GND VCC

Military –55°C to +125°C 0V 5V ± 10%
Commercial 0°C to +70°C 0V 5V ± 10%

2981 tbl 06

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Rating Com’l. Mil. Unit

V

TERM Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V

with Respect
to GND

A Operating 0 to +70 –55 to +125 °C

T

Temperature

BIAS Temperature –55 to +125 –65 to +135 °C

T

Under Bias

STG Storage –55 to +125 –65 to +150 °C

T

Temperature

PT Power Dissipation 1.0 1.0 W

OUT DC Output 50 50 mA

I

Current

NOTE: 2981 tbl 03

1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.

CAPACITANCE (TA = +25°C, f = 1.0MHz)

Symbol Parameter

CIN Input Capacitance VIN = 0V 7 pF

OUT Output Capacitance VOUT = 0V 7 pF

C

NOTE: 2981 tbl 04

1. This parameter is determined by device characterization, but is not
production tested.

(1)

Conditions Max. Unit

RECOMMENDED DC OPERATING
CONDITIONS

Symbol Parameter Min. Typ. Max. Unit

VCC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V
VIH Input High Voltage 2.2 — 6.0 V

IL Input Low Voltage –0.5

V

NOTE: 2981 tbl 05

1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.

(1)

— 0.8 V

5.2 2

IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS

(1)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V)

6167SA/LA15 6167SA/LA20 6167SA/LA25

Symbol Parameter Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit

I

CC1 Operating Power Supply Current SA 90 90 90 90 90 90 mA

CS

≤ V

IL, Outputs Open,

VCC = Max., f = 0

CC2 Dynamic Operating Current SA 120 130 100 110 100 100 mA

I

CS

≤ V

IL, Outputs Open,

VCC = Max., f = fMAX

SB Standby Power Supply Current SA 50 50 35 35 35 35 mA

I

(3)

(3)

LA 55 60 55 60 55 60

LA 100 110 80 85 70 75

(TTL Level)

CS

≥ V

IH, Outputs Open, LA 35 35 30 30 25 25

VCC = Max., f = fMAX

(3)

ISB1 Full Standby Power Supply Current SA 5 10 5 10 5 10 mA

(CMOS Level)

CS

≥ V

HC, VCC = Max. LA 0.9 2 0.05 2 0.05 0.9

V

IN ≥ VHC or VIN ≤ VLC, f = 0

DC ELECTRICAL CHARACTERISTICS

(3)

(1)

(CONTINUED)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V)

6167SA/LA35 6167SA/LA45

(2)

6167SA/LA55

Symbol Parameter Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit

CC1 Operating Power Supply Current SA 90 90 — 90 — 90 — 90 mA

I

CS

≤ V

IL, Outputs Open,

VCC = Max., f = 0

CC2 Dynamic Operating Current SA 100 100 — 100 — 100 — 100 mA

I

CS

≤ V

IL, Outputs Open,

VCC = Max., f = fMAX

SB Standby Power Supply Current SA 35 35 — 35 — 35 — 35 mA

I

(3)

(3)

LA 55 60 — 60 — 60 — 60

LA 65 70 — 65 — 60 — 60

(TTL Level)

CS

≥ V

IH, Outputs Open, LA 20 20 — 20 — 20 — 15

VCC = Max., f = fMAX

(3)

ISB1 Full Standby Power Supply Current SA 5 10 — 10 — 10 — 10 mA

(CMOS Level)

CS

≥ V

HC, VCC = Max. LA 0.05 0.9 — 0.9 — 0.9 — 0.9

V

IN ≥ VHC or VIN ≤ VLC, f = 0

NOTES: 2981 tbl 07

1. All values are maximum guaranteed values.

2. –55°C to +125°C temperature range only. Also available; 85ns and 100ns Military devices.

3. f

MAX = 1/tRC, only address inputs cycling at fMAX. f = 0 means no Address inputs change.

(3)

(2)

6167SA/LA70

(2)

5.2 3

IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS

VCC = 5.0V ± 10%

IDT6167SA IDT6167LA

Symbol Parameter Test Condition Min. Max. Min. Max. Unit

|I

LI| Input Leakage Current V CC = Max., MIL — 10 — 5 µA

VIN = GND to VCC COM’L — 5 — 2

LO| Output Leakage Current VCC = Max., CS = VIH, MIL — 10 — 5 µA

|I

VOUT = GND to VCC COM’L — 5 — 2

VOL Output Low Voltage IOL = 8mA, VCC = Min. — 0.4 — 0.4 V

OH Output High Voltage IOH = –4mA, VCC = Min. 2.4 — 2.4 — V

V

2981 tbl 08

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

(LA Version Only) VLC = 0.2V, VHC = VCC – 0.2V

(1)

Typ.

V

CC @VCC @

Symbol Parameter Test Condition Min. 2.0v 3.0V 2.0V 3.0V Unit

DR VCC for Data Retention — 2.0 — — — — V

V

CCDR Data Retention Current MIL. — 0.5 1.0 200 300 µA

I

COM’L. — 0.5 1.0 20 30

CDR Chip Deselect to Data

t

Retention Time VIN ≥ V

(3)

tR

(3)

LI|

|I

NOTES: 2981 tbl 09

1. TA = +25°C.

RC = Read Cycle Time.

2. t

3. This parameter is guaranteed by device characterization, but is not production tested.

Operation Recovery Time tRC
Input Leakage Current — — — — 2 2 µA

CS

≥ VHC 0————ns

HC or ≤ VLC

(2)

————ns

Max.

LOW VCC DATA RETENTION WAVEFORM

VCC

CS

4.5V 4.5V

V

IH VIH

DATA

RETENTION

MODE

V

DR ≥ 2V

tRtCDR

V

DR

5.2 4

2981 drw 03

IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC TEST CONDITIONS

Input Pulse Levels GND to 3.0V
Input Rise/Fall Times 5ns
Input Timing Reference Levels 1.5V
Output Reference Levels 1.5V
AC Test Load See Figures 1 and 2

2981 tbl 10

5V

5V

480Ω

5pF*

2981 drw 05

DATA

OUT

Ω

255

Figure 1. AC Test Load

480

30pF*

2981 drw 04

Ω

DATA

OUT

255Ω

Figure 2. AC Test Load

(for t

CLZ, tCHZ, tWHZ and tOW)

*Includes scope and jig.

AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, All Temperature Ranges)

6167SA15 6167SA20/25 6167SA35/45
6167LA15 6167LA20/25 6167LA35/45

(1)

6167SA55

(1)

6167LA55
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit
Read Cycle

tRC Read Cycle Time 15 — 20/25 — 35/45 — 55/70 — ns
tAA Address Access Time — 15 — 20/25 — 35/45 — 55/70 ns
tACS Chip Select Access Time — 15 — 20/25 — 35/45 — 55/70 ns

(2)

tCLZ
tCHZ

Chip Deselect to Output in Low-Z 3 — 5/5 — 5/5 — 5/5 — ns

(2)

Chip Select to Output in High-Z — 10 — 10/10 — 15/30 — 40/40 ns

tOH Output Hold from Address Change 3 — 5/5 — 5/5 — 5/5 — ns

(2)

tPU
tPD

Chip Select to Power-Up Time 0 — 0/0 — 0/0 — 0/0 — ns

(2)

Chip Deselect to Power-Down Time — 15 — 20/25 — 35/45 — 55/70 ns

Write Cycle

tWC Write Cycle Time 15 — 20/20 — 30/45 — 55/70 — ns
tCW Chip Select to End-of-Write 15 — 15/20 — 30/40 — 45/55 — ns
tAW Address Valid to End-of-Write 15 — 15/20 — 30/40 — 45/55 — ns
tAS Address Set-up Time 0 — 0/0 — 0/0 — 0/0 — ns
tWP Write Pulse Width 13 — 15/20 — 30/30 — 35/40 — ns
tWR Write Recovery Time 0 — 0/0 — 0/0 — 0/0 — ns
tDW Data Valid to End-of-Write 10 — 12/15 — 17/20 — 25/30 — ns
tDH Data Hold Time 0 — 0/0 — 0/0 — 0/0 — ns

(2)

tWHZ

OW

t

NOTES: 2981 tbl 11

1. –55°C to +125°C temperature range only. Also available: 85ns and 100ns Military devices.

2. This parameter is guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.

Write Enable to Output in High-Z — 7 — 8/8 — 15/30 — 40/40 ns

(2)

Output Active from End-of-Write 0 — 0/0 — 0/0 — 0/0 — ns

(1)

(1)

/70

(1)

(1)

/70

5.2 5

IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

TIMING WAVEFORM OF READ CYCLE NO. 1

ADDRESS

tAA

tOH

DATA

OUT

PREVIOUS DATAOUT VALID

TIMING WAVEFORM OF READ CYCLE NO. 2

CS

(4)

t

CLZ

DATA

HIGH IMPEDANCE

OUT

(1, 2)

(1, 3)

t

ACS

tRC

OUT VALID

DATA

2981 drw 06

t

RC

(4)

t

CHZ

DATA

OUT

VALID

HIGH

IMPEDANCE

t

PU

I

CC

V

CC

SUPPLY

CURRENT

I

SB

NOTES:

1.WE is HIGH for Read cycle.

2. Device is continuously selected, CS is LOW.

3. Address valid prior to or coincedent with CS transition LOW.

4. Transition is measured ±200mV from steady state.

t

PD

2981 drw 07

5.2 6

IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

TIMING WAVEFORM OF WRITE CYCLE NO. 1, (

t

WC

ADDRESS

t

AW

CS

t

WP

DATA

WE

OUT

t

AS

PREVIOUS DATA

OUT

(5)

t

WHZ

VALID

(6)

WEWE CONTROLLED TIMING)

(3)

t

WR

(5)

t

OW

t

DW

t

DH

(1, 2, 4)

t

CHZ

DATA
VALID

(5)

OUT

(6)

DATA

IN

TIMING WAVEFORM OF WRITE CYCLE NO. 2, (

CSCS CONTROLLED TIMING)

DATA

IN

VALID

(1, 2, 4)

tWC

ADDRESS

tAW

CS

(3)

tAS tWR

tCW

t

WE

tDW

DATAIN

NOTES:

1.WE or CS must be inactive during all address transitions.

2. A write occurs during the overlap of a LOW CS and a LOW WE.

WR is measured from the earlier of

3. t

4. If the CS low transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.

5. Transition is measured ±200mV from steady state.

6. During this period, the I/O pins are in the output state and the input signals must not be applied.

CS

or WE going HIGH to the end of the write cycle.

DATAIN VALID

tDH

2981 drw 08

2981 drw 09

5.2 7

IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES

ORDERING INFORMATION

IDT

6167

Device

Type

XX

Power

XXX

SpeedXXPackage

X

Process/

Temperature

Range

Blank
B

P
D
Y

15
20
25
35
45
55
70
85
100

SA
LA

Commercial (0°C to +70°C)
Military (–55°C to +125°C)

Compliant to MIL-STD-883, Class B

300MIL Plastic DIP (P20–1)
300MIL CERDIP (D20–1)
300MIL SOJ (SO20–1)

Military Only

Speed in nanoseconds
Military Only
Military Only
Military Only
Military Only

Standard Power
Low Power

2981 drw 10

5.2 8