HP MSA-2111-BLK, MSA-2111-TR1 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-2111
Features
• Cascadable 50␣ Ω Gain Block
• Medium Power:
10 dBm at 900 MHz
• High Gain:
16.5 dB Typical at 900 MHz
• Low Noise Figure:
3.3␣ dB Typical at 900 MHz
• Low Cost Surface Mount
Plastic Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
[1]
The MSA-2111 is a low cost silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in a surface mount plastic
SOT-143 package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
SOT-143 PackageDescription
Typical Biasing Configuration
R
bias
RFC (Optional)
C
block
IN OUT
MSA
V
= 3.6 V
d
C
block
5965-9663E
V
> 5 V
CC
6-478
MSA-2111 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 40 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65°C to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
2. T
3. Derate at 2.0 mW/°C for T
[2,3]
> 85° C.
C
125 mW
[1]
Thermal Resistance
θjc = 505°C/W
[2]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 29 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 900 MHz dB 16.0 17.5
Gain Flatness f = 0.1 to 0.3 GHz dB ±0.5
P
3 dB Bandwidth GHz 0.5
Input VSWR f = 0.1 to 2.5 GHz 1.8:1
Output VSWR f = 0.1 to 2.5 GHz 1.8:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
NF 50 Ω Noise Figure f = 900 MHz dB 3.3
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 900 MHz dBm 10
Third Order Intercept Point f = 900 MHz dBm 20
Group Delay f = 900 MHz psec 158
Device Voltage V 2.9 3.6 4.3
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 12 to 35 mA. Typical gain performance as a function of
current is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-2111-TR1 3000 7" Reel
MSA-2111-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-479
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