HP MSA-2011, MSA-2086-TR1, MSA-2086, MSA-2085, MSA-2035 Datasheet
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Silicon Bipolar RFIC Amplifiers
Technical Data
MSA-20XX Series
Features
MSA-2011
• Surface Mount SOT-143
Package
• 3 dB Bandwidth:
DC to 1.0 GHz
• 16.2 dB Gain at 1 GHz
• 4.3 dB NF at 1 GHz
MSA-2035
• Hermetic Ceramic Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 17.3 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
MSA-2085
• Plastic Microstrip Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 16.6 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
MSA-2086
• Surface Mount Plastic
Microstrip Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 16.6 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
MSA-2011
MSA-2035
MSA-2085
MSA-2086
Description
The MSA-20XX series are high
performance silicon bipolar RFIC
amplifiers designed to be
cascadable in 50 Ω systems. The
stability factor of K > 1 contributes
to easy cascading in numerous
narrow and broadband IF and RF
commercial and industrial
applications.
The MSA series is fabricated using
a 10 GHz fT, 25 GHz F
bipolar RFIC process which
utilizes nitride self-alignment, ion
implantation, and gold
metallization to achieve excellent
uniformity, performance, and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Package options include the
industry standard plastic surface
mount SOT-143 package, the
100␣ mil surface mountable
hermetic ceramic package, the
85␣ mil plastic microstripline
package, and the 85 mil surface
mountable plastic microstripline
package.
MAX
, silicon
5965-9560E
6-470
Absolute Maximum Ratings
[1]
MSA- MSA- MSA-
Parameter 2011 2035 2085, -2086
Typical Biasing Configuration
R
bias
V ≥ 7 V
CC
Device Current 50 mA 60 mA 60 mA
Power Dissipation
[2,3]
250 mW
[3a]
325 mW
[3b]
325 mW
[3c]
RF Input Power +13 dBm +13 dBm +13 dBm
Junction 150° C 200°C 150°C
INPUT
DC BLOCK
4
MSA
1
2
3
V = 5 V
d
RF CHOKE
R =
bias
V – V
CC
I
d
Temperature
Storage Temperature -65 to 150°C -65 to 200°C -65 to 150°C
Thermal 500° C/W 155°C/W 115°C/W
Resistance: θ
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
= 25°C.
CASE
3a. Derate at 2.0 mW/° C for TC > 25°C.
b. Derate at 6.5 mW/° C for TC > 149°C.
c. Derate at 8.7 mW/° C for TC > 112°C.
Electrical Specifications, T
jc
= 25°C
A
ID = 32 mA, Zo = 50 Ω
Parameters and
Symbol Test Conditions Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
G
P
Power Gain
(|S21|2)
f = 0.1 GHz dB 18.9 17.8 19.2 19.8 19.2
f = 0.5 GHz 18.1 18.7 18.3
f = 1.0 GHz 15.0 16.2 17.3 15.0 16.6
∆G
P
Gain Flatness
f = 0.1 to 0.6 GHz dB ±0.6 ± 0.4 ± 1.0 ± 0.6
f
3dB
3 dB Bandwidth GHz 1.0 1.1 1.1
VSWR Input VSWR
f = 0.1 to 3.0 GHz 1.3:1 1.3:1 1.2:1
Output VSWR
f = 0.1 to 3.0 GHz 1.4:1 1.4:1 1.5:1
P
1dB
Power Output @
1 dB Gain
Compression:
f = 1.0 GHz dB m 9.0 9.5 9.0
NF 50 Ω Noise Figure
f = 1.0 GHz dB 4.3 3.7 3.7
IP
3
Third Order
Intercept
Point
f = 1.0 GHz dB m 22 22 22
t
Group Delay
d
f = 1.0 GHz psec 143 143 143
V
D
Device Voltage
TC = 25°C V 4.0 5.0 6.0 4.5 5.0 5.5 4.3 5.0 6.3
dV/dT Device Voltage
Temperature mV/°C -9.3 -9.3 -9.3
Coefficient
Note:
1. Refer to “Tape and Reel Packaging for Surface Mount Devices.”
MSA-2011 MSA-2035 MSA-2085, -2086
6-471
OUTPUT
d
Typical Performance for MSA-2011
D
25
20
15
Gp (dB)
10
5
0.1 1.0 4.0
FREQUENCY (GHz)
-55°C
-25°C
25°C
85°C
Figure 1. Power Gain vs. Frequency at
Four Temperatures, ID = 32 mA.
6
5
40 mA
4
NOISE FIGURE (dB)
3
0.1 1.0 4.0
FREQUENCY (GHz)
20 mA
20
19
18
17
16
15
GAIN (dB)
14
13
12
11
20 35
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
I (mA)
d
Figure 2. Power Gain vs. Current at
25°C.
17
16
GAIN (dB)
15
10
9
1dB
P (dBm)
8
7
-25
G
P
NF
P
1dB
AMBIENT TEMPERATURE (°C)
4025 30
6
5
4
NOISE FIGURE (dB)
3
8525
16
40 mA
14
35 mA
12
30 mA
10
8
25 mA
1dB
6
P (dBm)
4
20 mA
2
0
0.1 1.0 4.0
FREQUENCY (GHz)
Figure 3. Typical P
25°C.
40
30
20
D
I mA
10
0
0
165432
vs. Frequency at
1dB
-55°C
-25°C
25°C
85°C
V (VOLTS)
Figure 4. Noise Figure vs. Frequency
at ID = 32 mA.
Figure 5. Power Gain, Noise Figure,
and P
ID = 32 mA.
vs. Temperature at 1 GHz and
1dB
Figure 6. ID vs. VD at Four
Temperatures.
6-472
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