HP MSA-1110 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-1110
Features
• High Dynamic Range
Cascadable 50␣ Ω or 75␣ Ω
Gain Block
• 3␣ dB Bandwidth:
50␣ MHz to 1.6␣ GHz
• 17.5 dBm Typical P
0.5␣ GHz
1␣ dB
at
(MMIC) housed in a hermetic high
reliability package. This MMIC is
designed for high dynamic range
in either 50 or 75␣ Ω systems by
combining low noise figure with
high IP3. Typical applications
include narrow and broadband
linear amplifiers in industrial and
military systems.
• 12 dB Typical 50␣ Ω Gain at
0.5␣ GHz
• 3.5␣ dB Typical Noise Figure
at 0.5␣ GHz
• Hermetic Gold-ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
Description
The MSA-1110 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
100 mil Package
MAX
V
> 8 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 5.5 V
d
C
block
5965-9558E
6-462
MSA-1110 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 90 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.4 mW/°C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
560 mW
> 124° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 135°C/W
[2,4]
:
Electrical Specifications
[1]
, T
= 25° C
A
Symbol Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω Units Min. Typ. Max.
G
∆G
f
P
3 dB
Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5
Gain Flatness f = 0.1 to 1.0 GHz dB ±0.7 ± 1.0
P
3 dB Bandwidth
[2]
GHz 1.6
Input VSWR f = 0.1 to 1.0 GHz 1.7:1
VSWR
Output VSWR f = 0.1 to 1.0 GHz 1.9:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 3.5 4.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 16.0 17.5
Third Order Intercept Point f = 0.5 GHz dBm 30.0
Group Delay f = 0.5 GHz psec 160
Device Voltage V 4.5 5.5 6.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current
is on the following page.
Referenced from 50 MHz gain (GP).
2.
6-463
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