HP MSA-1105-STR, MSA-1105-TR1 Datasheet

Cascadable Silicon Bipolar MMIC␣ Amplifier
Technical Data
MSA-1105

Features

• High Dynamic Range
Cascadable 50␣ or 75␣ Gain Block
50␣ MHz to 1.3␣ GHz
• 17.5 dBm Typical P
0.5␣ GHz
• 3.6␣ dB Typical Noise Figure at 0.5␣ GHz
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available
Note:
1. Refer to PACKAGING section “Tape­and-Reel Packaging for Semiconduc­tor Devices.”
[1]
1␣ dB
at
The MSA-1105 is a high perfor­mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for high dynamic range in either 50 or 75␣ systems by combining low noise figure with high IP
. Typical
3
applications include narrow and broadband linear amplifiers in commercial and industrial systems.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f
MAX
silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli­zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

05 Plastic PackageDescription

Typical Biasing Configuration

R
bias
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 5.5 V
d
C
block
5965-9557E
V
> 8 V
CC
6-458

MSA-1105 Absolute Maximum Ratings

Parameter Absolute Maximum
Device Current 80 mA Power Dissipation
[2,3]
550 mW
RF Input Power +13 dBm Junction Temperature 150°C Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 124° C.
C
2. T
3. Derate at 8 mW/°C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 125°C/W
[2,4]
:

Electrical Specifications

[1]
, T
A
= 25° C
Symbol Parameters and Test Conditions: Id = 60 mA, ZO = 50 Units Min. Typ. Max.
G
P
Power Gain (|S21|2) f = 0.05 GHz dB 12.7
f = 0.5 GHz dB 10.0 12.0 f = 1.0 GHz dB 10.5
G f
3 dB
Gain Flatness f = 0.1 to 1.0 GHz dB ±1.0
P
3 dB Bandwidth
[2]
GHz 1.3
Input VSWR f = 0.1 to 1.0 GHz 1.5:1
VSWR
Output VSWR f = 0.1 to 1.0 GHz 1.7:1
NF 50 Noise Figure f = 0.5 GHz dB 3.6 P IP t V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 17.5 Third Order Intercept Point f = 0.5 GHz dBm 30.0 Group Delay f = 0.5 GHz psec 200 Device Voltage V 4.4 5.5 6.6
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current is on the following page. Referenced from 50 MHz gain (GP).
2.

Part Number Ordering Information

Part Number No. of Devices Container
MSA-1105-TR1 500 7" Reel MSA-1105-STR 10 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-459
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