HP MSA-1104 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-1104
Features
• High Dynamic Range
Cascadable 50␣ Ω or 75␣ Ω
Gain Block
• 3␣ dB Bandwidth:
50␣ MHz to 1.3␣ GHz
• 17.5 dBm Typical P
1␣ dB
at
plastic package. This MMIC is
designed for high dynamic range
in either 50 or 75␣ Ω systems by
combining low noise figure with
high IP3. Typical applications
include narrow and broadband
linear amplifiers in commercial
and industrial systems.
0.5␣ GHz
• 12␣ dB Typical 50␣ Ω Gain at
0.5␣ GHz
• 3.6␣ dB Typical Noise Figure
at 0.5␣ GHz
• Low Cost Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
Description
The MSA-1104 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
(MMIC) housed in a low cost
Typical Biasing Configuration
R
bias
04A Plastic Package
MAX
V
> 8 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 5.5 V
d
C
block
5965-9556E
6-454
MSA-1104 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
Power Dissipation
[2,3]
550 mW
RF Input Power +1 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 87° C.
C
2. T
3. Derate at 8.7 mW/°C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 115°C/W
[2,4]
:
Electrical Specifications
[1]
, T
A
= 25° C
Symbol Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω Units Min. Typ. Max.
G
P
Power Gain (|S21|2) f = 0.05 GHz dB 12.7
f = 0.5 GHz dB 10.0 12.0
f = 1.0 GHz dB 10.5
∆G
f
3 dB
Gain Flatness f = 0.1 to 1.0 GHz dB ±1.0
P
3 dB Bandwidth
[2]
GHz 1.3
Input VSWR f = 0.1 to 1.0 GHz 1.5:1
VSWR
Output VSWR f = 0.1 to 1.0 GHz 1.7:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 3.6
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 17.5
Third Order Intercept Point f = 0.5 GHz dBm 30
Group Delay f = 0.5 GHz psec 200
Device Voltage V 4.4 5.5 6.6
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
Referenced from 50 MHz gain (GP).
2.
6-455
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