HP MSA-1000-GP4 Datasheet
Cascadable Silicon Bipolar
1
3
22 2
4
2
AK
MMIC␣ Amplifier
Technical Data
MSA-1000
Features
• High Output Power:
+27 dBm Typical P
1dB
at
1.0␣ GHz
• Low Distortion:
37 dBm Typical IP3 at 1.0␣ GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• Impedance Matched to 25 Ω
for Push-Pull Configurations
Description
The MSA-1000 is a high performance, medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) chip.
This MMIC is designed for use in a
push-pull configuration in a 25␣ Ω
system. The MSA-1000 can also be
used as single-ended amplifier in a
50␣ Ω system with slightly reduced
performance. Typical applications
include narrow and broadband RF
amplifiers in industrial and
military systems.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
This chip is intended to be used
with an external blocking capacitor completing the shunt feedback
Chip Outline
[1]
path (closed loop). Data sheet
characterization is given for a
80␣ pF capacitor. Low frequency
performance can be extended by
using a larger valued capacitor.
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for
additional information.
[1]
Typical Push-Pull Biasing Configuration
IN
5965-9553E
50 Ω
C
block
C
block
R
C
Fbl
4
MSA
1
2
2
1
MSA
4
C
Fbl
bias
RFC
C
block
3
V
= 15 V
d
3
C
block
RFC
R
bias
V
>
20
V
CC
OUT
50 Ω
V
>
20
V
CC
6-442
MSA-1000 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 425 mA
Power Dissipation
RF Input Power +25 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting␣ Surface
3. Derate at 100 mW/°C for T
4. The small spot size of this technique results in a higher, though more
accurate determination of θ
[2,3]
(TMS)
= 25°C.
Mounting␣ Surface
> 130°C.
than do alternate methods.
jc
7.0 W
[1]
Thermal Resistance
θjc = 10°C/W
[2,4]
:
[3]
[1]
, T
= 25° C
A
[2]
: Id = 325 mA, Z
= 25 Ω Units Min. Typ. Max.
O
GHz 2.6
Electrical Specifications
Symbol Parameters and Test Conditions
G
∆G
f
3 dB
P
Power Gain (|S21|2) f = 1.0 GHz dB 8.5
Gain Flatness f = 0.1 to 2.0 GHz dB ±0.6
P
3 dB Bandwidth
Input VSWR f = 0.1 to 2.0 GHz 2.0:1
VSWR
Output VSWR f = 0.1 to 2.0 GHz 2.5:1
NF 25 Ω Noise Figure f = 1.0 GHz dB 7.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 27.0
Third Order Intercept Point f = 1.0 GHz dBm 37.0
Group Delay f = 1.0 GHz psec 175
Device Voltage V 13.5 15.0 16.5
dV/dT Device Voltage Temperature Coefficient mV/°C –18.0
Notes:
1. The recommended operating current range for this device is 150 to 400 mA. Typical performance as a function of
current is on the following page.
RF performance of the chip is determined by packaging and testing 10 devices per wafer.
2.
3. Referenced from 0.1 GHz gain (GP).
Part Number Ordering Information
Part Number Devices Per Tray
MSA-1000-GP4 100
6-443
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