HP MSA-0900-GP4 Datasheet

Cascadable Silicon Bipolar MMIC␣ Amplifier
Technical Data
MSA-0900

Features

• Broadband, Minimum Ripple
Cascadable 50 Gain Block
• 8.0 ± 0.2 dB Typical Gain
• 3 dB Bandwidth:
0.1 to 6.0␣ GHz
• Low VSWR:
1.5:1 from 0.1 to 4.0␣ GHz
• 11.5 dBm Typical P
1dB
at
1.0␣ GHz

Description

The MSA-0900 is a high perfor­mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for very wide bandwidth industrial and military applica­tions that require flat gain and low VSWR.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f
MAX
, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli­zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
The recommended assembly procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold wire.
This chip is intended to be used with an external blocking capaci­tor completing the shunt feedback path (closed loop). Data sheet characterization is given for a 45␣ pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.
[1]

Chip Outline

Note:
1. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.
[1]
AK

Typical Biasing Configuration

R
(Required)
RFC (Optional)
= 7.8 V
d
C
bias
block
C
Fbl
C
block
IN OUT
4
3
MSA
1
V
2
5965-9548E
V
CC
> 12 V
6-430

MSA-0900 Absolute Maximum Ratings

Parameter Absolute Maximum
Device Current 80 mA
(TMS)
[2,3]
= 25°C.
Mounting␣ Surface
> 148° C.
than do alternate methods.
jc
750 mW
Power Dissipation RF Input Power +13 dBm
Junction Temperature 200°C Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
3. Derate at 14 mW/° C for T
4. The small spot size of this technique results in a higher, though more
accurate determination of θ
[1]
Thermal Resistance
θjc = 70°C/W
[2,4]
:

Electrical Specifications

Symbol Parameters and Test Conditions
G
G
f
3 dB
P
Power Gain (|S21|2) f = 0.1 GHz dB 8.0
P
Gain Flatness
3 dB Bandwidth
[3]
[3,4]
[1]
, T
A
= 25° C
[2]
: Id = 35 mA, Z
= 50 Units Min. Typ. Max.
O
f = 0.1 to 4.0 GHz dB ±0.2
GHz 6.0
Input VSWR f = 1.0 to 4.0 GHz 1.4:1
VSWR
Output VSWR f = 1.0 to 4.0 GHz 1.5:1
NF 50 Noise Figure f = 1.0 GHz dB 6.0
f = 4.0 GHz 6.5
P
1 dB
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 11.5
f = 4.0 GHz 6.5
IP
t
V
3
D
d
Third Order Intercept Point f = 1.0 GHz dBm 23.0
Group Delay f = 1.0 GHz psec 60
Device Voltage V 7.0 7.8 8.6
dV/dT Device Voltage Temperature Coefficient mV/°C –16.0
Notes:
1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current is on the following page. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
2.
3. The value is the expected achievable performance for the MSA-0900 used with an external 45 pF capacitor mounted in a 100 mil stripline package.
4. Referenced from 0.1 GHz gain (GP).

Part Number Ordering Information

Part Number Devices Per Tray
MSA-0900-GP4 100
6-431
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