HP MSA-0886-TR1, MSA-0886-BLK Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0886
Features
• Usable Gain to 5.5␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
22.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.3␣ dB Typical at 1.0␣ GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
[1]
The MSA-0886 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block
above 0.5␣ GHz and can be used as
a high gain transistor below this
frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial and industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
Typical Biasing Configuration
R
bias
86 Plastic PackageDescription
ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
,
MAX
V
>
10
V
CC
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 7.8 V
d
C
block
5965-9547E
6-426
MSA-0886 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 65 mA
Power Dissipation
[2,3]
500 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65°C to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
CASE
= 25°C.
> 80° C.
C
2. T
3. Derate at 7.1 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
[1]
Thermal Resistance
θjc = 140°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 36 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 32.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 20.5 22.5
VSWR
Input VSWR f = 0.1 to 3.0 GHz 2.1:1
Output VSWR f = 0.1 to 3.0 GHz 1.9:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 3.3
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 27.0
Group Delay f = 1.0 GHz psec 140
Device Voltage V 6.2 7.8 9.4
dV/dT Device Voltage Temperature Coefficient mV/°C –17.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0886-TR1 1000 7" Reel
MSA-0886-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-427
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