HP MSA-0786-BLK, MSA-0786-TR1 Datasheet
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0786
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
4.0 V Typical V
d
• 3 dB Bandwidth:
DC to 2.0 GHz
• 12.5␣ dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
[1]
The MSA-0786 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
Typical Biasing Configuration
R
bias
86 Plastic PackageDescription
zation to achieve excellent
performance, uniformity and
,
MAX
V
> 5 V
CC
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 4.0 V
d
C
block
5965-9594E
6-406
MSA-0786 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 60 mA
Power Dissipation
[2,3]
275 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8.3 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
CASE
= 25°C.
> 117° C.
C
[1]
Thermal Resistance
θjc = 120°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 22 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 13.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 10.5 12.5
∆G
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.3 GHz dB ±0.7
P
3 dB Bandwidth GHz 2.0
Input VSWR f = 0.1 to 2.5 GHz 1.7:1
Output VSWR f = 0.1 to 2.5 GHz 1.7:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 5.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 2.0
Third Order Intercept Point f = 1.0 GHz dBm 19.0
Group Delay f = 1.0 GHz psec 150
Device Voltage V 3.2 4.0 4.8
dV/dT Device Voltage Temperature Coefficient mV/°C –7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0786-TR1 1000 7" Reel
MSA-0786-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-407
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