Reflective SPDT GaAs MMIC
Switch
Technical Data
MGS-70008
Features
• Single-Pole, Double-Throw
Output
• Broad Bandwidth:
DC to 3␣ GHz
• Low Insertion Loss:
0.8␣ dB␣ Typical at 1␣ GHz
• Fast Switching Time:
3␣ ns␣ Typical
• Ultra Low DC Power
Consumption
• Small Surface-Mount Plastic
Package
Description
The MGS-70008 is a single-pole,
double-throw monolithic GaAs
MMIC switch. The J2 and J3 of the
MGS-70008 are terminated to
ground when “off” (an absorptive
version, the MGS-71008, which
terminates the “off” port in an
internal 50␣ Ω resistor, is also
available). The switches are
sealed in a small, plastic, surfacemount SO-8 package. Switching is
actuated by a -5 V control voltage
per the truth table shown on the
next page. -3.3␣ V operation is also
possible with some reduction in
P
and IP3.
1 dB
The MGS-70008 is designed for
high volume commercial applications where low insertion loss,
high isolation, and fast switching
speed are required. Its low cost
and high performance make it
suitable for a wide variety of uses
such as digital cellular, spread
spectrum, GPS, and other RF
switching applications. Refer to
applications note AN-G007 for
more application details.
The die is fabricated using HP’s
nominal 0.7␣ µm Schottky-barrier-
gate, gold metallization, and
silicon nitride passivation to
achieve excellent performance,
uniformity, and reliability.
SO-8 Package
AC Equivalent
Circuit/Pinout
J1
Ground
J2
Control 1 Control 2
Ground
Ground
J3
5965-9116E
7-156
MGS-70008 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
Maximum Input Power
below 500 MHz dBm +27
above 500 MHz dBm +30
Control Voltage V -8.0
T
STG
Note:
1. Operation of this device above any one of these limits may cause permanent
damage.
Storage Temperature °C -65 to 150
[1]
Electrical Specifications, T
Symbol Parameters and Test Conditions
I
C
Control Input Current DC µA 12 110
= 25° C
A
[1]
Units Min. Typ. Max.
BW Bandwidth GHz DC-3
IL Insertion Loss 200 MHz dB 0.6
1000 MHz dB 0.8 1.1
2000 MHz dB 1.0
2500 MHz dB 1.1
3000 MHz dB 1.2
ISO Isolation 200 MHz dB 51
1000 MHz dB 29 33
2000 MHz dB 23
2500 MHz dB 19
3000 MHz dB 16
VSWR Voltage Standing Wave Ratio (on port) DC- 1000 MHz — 1.2:1 1.4:1
J1, J2 or J3 1000- 3000 MHz — 1.3:1
VSWR Voltage Standing Wave Ratio (off port) DC-2000 MHz — ≥ 10:1
J2 or J3 2000-3000 MHz — ≥10:1
I
SW
[2]
P
1 dB
Switching Speed 10% to 90% ns 3
Output @ 1 dB Gain Compression 200 MHz dB m 18.5
1000 MHz d Bm 26.0
2000 MHz d Bm 26.0
[2]
IP
3
3rd Order Intercept 200 MHz dB m 41
1000 MHz d Bm 45
2000 MHz d Bm 45
Notes:
1.
Measured in a 50 Ω system at 1 GHz, unless otherwise specified, V
2.
Measured in a 50 Ω system with V
= -7 V.
C
7-157
= -5 V.
C