HP MGA-86576-TR1, MGA-86576-STR Datasheet

1.5 – 8 GHz Low Noise GaAs
MMIC Amplifier

Technical Data

MGA-86576

Features

• 1.6 dB Noise Figure at 4 GHz

• 23 dB Gain at 4 GHz

• +6 dBm P

at 4 GHz

1dB

• Single +5 V Bias Supply

Applications

• LNA or Gain Stage for 2.4
GHz and 5.7 GHz ISM Bands

• Front End Amplifier for GPS
Receivers

• LNA or Gain Stage for PCN
and MMDS Applications

• C-Band Satellite Receivers

• Broadband Amplifier for
Instrumentation

Schematic Diagram

RF
INPUT

1

Surface Mount Ceramic Package

Pin Connections

4 GROUND

GROUND

RF OUTPUT
AND V

d

RF INPUT

13

865

2

RF OUTPUT
AND V

d

3

Description

Hewlett-Packard’s MGA-86576 is
an economical, easy-to-use GaAs
MMIC amplifier that offers low
noise and excellent gain for
applications from 1.5 to 8 GHz.

The MGA-86576 may be used
without impedance matching as a
high performance 2 dB NF gain
block. Alternatively, with the
addition of a simple series
inductor at the input, the device
noise figure can be reduced to

1.6␣ dB at 4 GHz.

The circuit uses state-of-the-art
PHEMT technology with self­biasing current sources, a source­follower interstage, resistive
feedback, and on chip impedance
matching networks.

A patented, on-chip active bias
circuit allows operation from a
single +5 V power supply. Current
consumption is only 16 mA.

5965-9687E

These devices are 100% RF tested
to assure consistent performance.

24GROUNDGROUND

6-228

Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

d

V

g

P

in

T

ch

T

STG

Device Voltage, RF output V 9
to ground

Device Voltage, RF input V +0.5
to ground -1.0

CW RF Input Power dBm +13

Channel Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance

θ

= 110°C/W

ch-c

Notes:

1. Operation of this device above any one
of these limits may cause permanent
damage.

2. T

= 25°C (T

c

temperature at the package pins where
contact is made to the circuit board).

is defined to be the

c

[2]

:

MGA-86576 Electrical Specifications, T

= 25° C, Zo = 50 Ω, V

C

= 5 V

d

Symbol Parameters and Test Conditions Units Min. Typ. Max.

Gp Power Gain (|S21|2) f = 1.5 GHz dB 21.2

f = 2.5 GHz 23.7
f = 4.0 GHz 20 23.1
f = 6.0 GHz 19.3
f = 8.0 GHz 15.4

NF

50

50 Ω Noise Figure f = 1.5 GHz dB 2.2

f = 2.5 GHz 1.9
f = 4.0 GHz 2.0 2.3
f = 6.0 GHz 2.3
f = 8.0 GHz 2.5

NF

o

Optimum Noise Figure f = 1.5 GHz dB 1.6
(Input tuned for lowest noise f = 2.5 GHz 1.5
figure) f = 4.0 GHz 1.6

f = 6.0 GHz 1.8
f = 8.0 GHz 2.1

P

1dB

Output Power at 1 dB Gain f = 1.5 GHz dBm 6.4
Compression f = 2.5 GHz 7.0

f = 4.0 GHz 6.3
f = 6.0 GHz 4.3
f = 8.0 GHz 3.8

IP

3

Third Order Intercept Point f = 4.0 GHz dBm 16.0

VSWR Input VSWR f = 1.5 GHz 3.6:1

f = 2.5 GHz 3.3:1
f = 4.0 GHz 2.2:1 3.6:1
f = 6.0 GHz 1.4:1
f = 8.0 GHz 1.2:1

Output VSWR f = 1.5 GHz 2.5:1

f = 2.5 GHz 2.1:1
f = 4.0 GHz 1.7:1
f = 6.0 GHz 1.4:1
f = 8.0 GHz 1.3:1

I

d

Device Current mA 9 16 22

6-229