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HMMC-5023
TECHNICAL DATA
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HP HMMC-5023 TECHNICAL DATA

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23 GHz LNA (21.2 – 26.5 GHz)
Technical Data

Features

• Frequency Range:
21 .2 – 23.6 GHz and
24.5 – 26.5 GHz Specified 21 – 30 GHz Performance
• Low Noise Temperature:
226 K (2.5 dB N.F.) Typical
• High Gain: 24 dB Typical
• 50 Ω Input/Output Matching
• Single Supply Bias with Optional Bias Adjust:
5 volts (@ 24 mA Typical)
HMMC-5023
Chip Size: 2980 x 620 µm (74 x 24.4 mils) Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils), or larger

Description

The HMMC-5023 MMIC is a high­gain low-noise amplifier (LNA) that operates from 21 GHz to over 30 GHz. By eliminating the complex tuning and assembly processes typically required by hybrid (discrete-FET) amplifiers, the HMMC-5023 is a cost-effective alternative in 21.2 – 23.6 GHz and
24.5 – 26.5 GHz communications
receivers. The device has good input and output match to 50␣ ohms and is unconditionally stable to more than 40 GHz. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. It is fabricated using a PHEMT integrated circuit structure that provides exceptional noise and gain performance.

Absolute Maximum Ratings

[1]
Symbol Parameters/Conditions Units Min. Max.
VD1, V
VD1, V
I
D1
I
D2
P
in
T
ch
T
A
T
STG
T
max
Notes:
1. Absolute maximum rating for continuous operation unless otherwise noted.
2. Operating at this power level for extended (continuous) periods is not recommended.
3. Refer to DC Specifications/Physical Properties table for derating information.
Drain Supply Voltage V 3 8
D2
Gate Supply Voltage V 0.4 2
D2
Drain Supply Current mA 35
Drain Supply Current mA 35
RF Input Power
Operating Channel Temp.
[2]
[3]
dBm 15
°C +150 Backside Ambient Temp. °C -55 +140 Storage Temperature °C - 65 +165 Maximum Assembly Temp. °C +300
5965-5448E
6-34

HMMC-5023 DC Specifications/Physical Properties

[1]
Symbol Parameters and Test Conditions Units Min. Typ. Max.
VD1, V
VG1, V
ID1, I
D2
Recommended Drain Supply Voltage V 3 5 7
D2
Gate Supply Voltage V 0.4 0.8
G2
[VD1 ≤ VD1(max), V
D2
≤ V
(max)]
D2
Input and Output Stage Drain Supply Current mA 12 35
[2]
(VG1 = VG2 = Open, VD1 = VD2 = 5 Volts)
ID1 + I
Total Drain Supply Current mA 13 24 30
D2
(VG1 = VG2 = Open, VD1 = VD2 = 5 Volts)
θ
ch-bs
Thermal Resistance (Channel-to-Backside at T
T
ch
Notes:
1. Backside ambient operating temperature T
2. Open circuit voltage at VG1 and VG2 when VD1 and VD2 are 5 volts.
3. Thermal resistance (in °C/Watt) at a channel temperature T (°C) can be estimated using this equation: θ(T) @ 75 x [T(°C)+ 273] / [150°C+ 273].
4. Derate MTTF by a factor of two for every 8°C above T
Channel Temperature V
= VG2 = Open, V
G1
[3]
= 150° C)
ch
[4]
(T
= 140° C, MTTF = 106 hrs, °C 150
A
= VD = 5 Volts)
D1
= 25°C unless otherwise noted.
A
° C/Watt 75
.
ch

HMMC-5023 RF Specifications,

T
= 25°C, V
op
Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max.
BW Operating Bandwidth GHz 21.2 23.6 24.5 26.5
Gain Small Signal Gain dB 21 24 28 17 21 25
∆ Gain Small Signal Gain Flatness dB ±1 ±1.5
(RLin)
MIN
(RL
out)MIN
Isolation Reverse Isolation dB 40 50 40 48
P
-1dB
P
sat
2nd Harm. Second Harmonic Power Level dBc -30 -30
NF
= V
D1
= 5 V, VG1 = VG2= Open, Z
D2
= 50 Ω, unless otherwise noted
O
21.2–23.6 GHz 24.5–26.5 GHz
Minimum Input Return Loss dB 10 12 12 20
Minimum Output Return Loss dB 8 10 8 10
Output Power @ 1 dB Gain Compression dBm 10 10
Output Power @ 1 dB Gain Compression dBm 14 14 (VD = 5 V, VG1= Open, VD2 = 7 V, VG2 set for ID2 = 35 mA)
Saturated Output Power dBm 12 12 (@ 3 dB Gain Compression)
[f = 2 fo, P
(fo) = P
out
-1dB
,
21.2 GHz ≤ fo ≤ 23.6 GHz]
Noise Figure, 22 GHz Noise Figure, 25 GHz 2.8 3.3
dB
2.5 3.0
2
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HMMC-5023 Applications

The HMMC-5023 low noise amplifier (LNA) is designed for use in digital radio communica­tion systems that operate within the 21.2 GHz to 23.6 GHz fre­quency band. High gain and low noise temperature make it ideally suited as a front-end gain stage. The MMIC solution is a cost effective alternative to hybrid assemblies.

Biasing and Operation

The HMMC-5023 has four cas­caded gain stages as shown in Figure 1. The first two gain stages at the input are biased with the VD1 drain supply. Similarly the two output stages are biased with the VD2 supply. Standard LNA operation is with a single positive DC drain supply voltage (VD1=VD2=5 V) using the assem­bly diagram shown in Figure 9(a). If desired, the output stage DC supply voltage (VD2) can be increased to improve output power capability while maintain­ing optimum low noise bias conditions for the input section. The output power may also be adjusted by applying a positive voltage at VG2 to alter the operat­ing bias point for both output
FETs. Increasing the voltage applied to VG2 (more positively) results in a more negative gate-to­source voltage and, therefore, lower drain current. Figures 9(b) and 9(c) illustrate how the device can be assembled for both independent drain supply opera­tion and for output-stage gate bias control.
No ground wires are required since ground connections are made with plated through-holes to the backside of the device.

Assembly Techniques

Solder die attach using a fluxless gold-tin (AuSn) solder preform is the recommended assembly method. A conductive epoxy such as ABLEBOND® 71-1LM1 or ABLEBOND® 36-2 may also be used for die attaching provided the Absolute Maximum Thermal Ratings are not exceeded. The device should be attached to an electrically conductive surface to complete the DC and RF ground paths. Ground path inductance should be minimized (<10 pH) to assure stable operation. The backside metallization on the device is gold.
It is recommended that the RF input and RF output connections be made using either 500 line/inch (or equivalent) gold wire mesh, or dual 0.7 mil diameter gold wire. The RF wires should be kept as short as possible to minimize inductance. The bias supply wire can be a 0.7 mil diameter gold wire attached to either of the VDD bonding pads.
Thermosonic wedge is the preferred method for wire bonding to the gold bond pads. Mesh wires can be attached using a 2 mil round tacking tool and a tool force of approximately 22␣ grams with an ultrasonic power of roughly 55 dB for a
duration of 76 ± 8 msec. A guided-
wedge at an ultrasonic power level of 64 dB can be used for the
0.7 mil wire. The recommended wire bond stage temperature is
150 ± 2 °C.
For more detailed information see HP application note #999 “GaAs MMIC Assembly and Handling Guidelines.”
GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices.
INPUT STAGE OUTPUT STAGE
IN
92 Ω
V
G1
Figure 1. HMMC-5023 Simplified Schematic.
V
D1
92 Ω
6-36
OUT
V
G2
V
D2

HMMC-5023 Typical Performance

V
= VD2 = 5.0 V
D1
30
Gain
26
22
18
14
SMALL-SIGNAL GAIN (dB)
10
19.0 20.2 21.4 22.6 23.8 25.0
Figure 2. Gain and Isolation vs. Frequency.
Spec Range
21.2 – 23.6 GHz
FREQUENCY
Isolation
(GHz)
0
10
20
30
40
50
REVERSE ISOLATION (dB)
60 70
V
= VD2 = 5.0 V
D1
0
Spec Range
5
10
15
20
INPUT RETURN LOSS (dB)
25
19.0 20.2 21.4 22.6 23.8 25.0
Figure 3. Input and Output Return Loss vs. Frequency.
21.2 – 23.6 GHz
Input
FREQUENCY
(GHz)
Output
0
5
10
15
20
OUTPUT RETURN LOSS (dB)
25

Typical Scattering Parameters

Freq. S
11
[1]
, (T
= 25° C, V
op
S
21
= VD2 = 5.0 V, VG1 = VG2 = Open, Z
D1
S
12
= 50 Ω
o
S
22
GHz dB Mag Ang dB Mag Ang dB Mag Ang dB Mag Ang
19.0 -6.3 0.486 61.9 -61.6 0.0008 122.7 22.3 13.090 83.3 -6.6 0.470 -179.1
19.2 -6.4 0.477 59.4 -61.6 0.0008 116.3 22.6 13.509 74.2 -6.9 0.450 175.7
19.4 -6.6 0.466 56.7 -61.0 0.0009 113.1 22.5 13.355 64.0 -7.4 0.427 169.7
19.6 -6.8 0.455 53.8 -61.3 0.0009 104.2 23.2 14.459 56.1 -7.9 0.403 163.5
19.8 -7.1 0.443 50.6 -62.3 0.0008 93.0 23.0 14.142 45.0 -8.4 0.381 156.5
20.0 -7.4 0.428 47.1 -61.2 0.0009 72.6 23.5 14.913 36.4 -8.9 0.358 148.8
20.2 -7.8 0.409 43.8 -61.3 0.0009 66.1 23.9 15.599 26.2 -9.5 0.333 139.9
20.4 -8.2 0.391 40.2 -60.9 0.0009 47.3 24.4 16.617 15.7 -10.2 0.309 130.7
20.6 -8.7 0.368 36.2 -59.5 0.0011 25.8 24.7 17.085 5.7 -10.8 0.290 119.5
20.8 -9.3 0.344 31.8 -59.6 0.0011 11.5 25.1 18.061 -4.7 -11.2 0.274 106.2
21.0 -10.0 0.318 27.4 -58.2 0.0012 -4.2 25.4 18.663 -15.3 -11.7 0.259 91.3
21.2 -10.8 0.288 22.9 -56.0 0.0016 -17.6 25.6 19.010 -26.6 -12.0 0.252 74.6
21.4 -11.8 0.256 18.4 -54.9 0.0018 -36.9 25.7 19.209 -38.7 -12.1 0.247 56.4
21.6 -13.1 0.220 14.9 -55.1 0.0018 -52.2 25.7 19.209 -51.3 -12.2 0.247 38.2
21.8 -14.7 0.185 12.1 -53.8 0.0020 -64.6 25.7 19.354 -61.4 -11.9 0.254 21.9
22.0 -16.5 0.149 11.0 -52.5 0.0024 -75.8 25.9 19.769 -74.0 -11.7 0.261 6.8
22.2 -18.5 0.118 12.1 -51.2 0.0028 -90.4 25.6 19.066 -85.2 -11.3 0.271 -6.6
22.4 -20.6 0.094 15.9 -50.5 0.0030 -100.3 25.6 19.113 -96.2 -11.0 0.282 -18.4
22.6 -22.7 0.074 22.8 -50.0 0.0031 -108.7 25.0 17.824 -107.5 -10.7 0.291 -28.7
22.8 -24.3 0.061 37.4 -49.3 0.0034 -118.9 25.1 17.943 -116.9 -10.5 0.298 -37.9
23.0 -24.9 0.057 54.0 -48.5 0.0037 -126.2 24.3 16.401 -127.6 -10.4 0.301 -45.5
23.2 -24.7 0.059 68.3 -47.6 0.0042 -134.9 24.2 16.279 -137.5 -10.4 0.300 -52.3
23.4 -24.2 0.061 78.9 -47.3 0.0043 -144.0 23.9 15.625 -146.3 -10.5 0.298 -58.0
23.6 -23.6 0.066 86.3 -47.2 0.0044 -148.9 23.2 14.469 -154.0 -10.6 0.295 -62.4
23.8 -23.3 0.068 93.5 -46.9 0.0045 -156.1 23.3 14.607 -163.4 -10.5 0.298 -65.9
24.0 -22.6 0.074 98.0 -46.4 0.0048 -161.1 22.4 13.168 -170.8 -10.6 0.296 -69.2
24.2 -22.2 0.078 100.8 -46.1 0.0049 -167.3 22.3 13.002 -179.0 -10.6 0.294 -72.0
24.4 -21.8 0.082 102.8 -45.5 0.0053 -171.7 21.6 12.087 173.1 -10.6 0.294 -74.7
24.6 -21.4 0.086 105.5 -45.6 0.0052 -176.4 21.8 12.350 166.3 -10.7 0.291 -76.8
24.8 -21.2 0.088 108.1 -44.9 0.0057 179.1 21.4 11.771 159.2 -10.8 0.289 -78.4
25.0 -20.9 0.091 293.2 -44.4 0.0061 353.0 21.0 11.257 331.9 -10.8 0.289 -79.3
Note:
1. Data obtained from wafer-probed measurements.
6-37

HMMC-5023 Typical Performance

V
= VD2 = 5.0 V
D1
30
26
22
18
14
SMALL-SIGNAL GAIN (dB)
Spec Range
21.2 – 23.6 GHz
0.02 dB/°C
typical
[1]
–55°C –30°C 0° C +30°C +60°C
+100°C
V
= VD2 = 5.0 V, TA = 25°C
D1
5
4
3
2
NOISE FIGURE (dB)
1
Spec Range
21.2 – 23.6 GHz
[3]
10
19.0 20.2 21.4 22.6 23.8 25.0 FREQUENCY
(GHz)
Figure 4. Small-Signal Gain vs. Frequency and Ambient Temperature
V
= VD2 = 5.0 V
D1
20
21 GHz
25
Gain
20
GAIN (dB)
15
10
24681012
Figure 6. Gain Compression and Efficiency Characteristics
23 GHz
OUTPUT POWER (dBm)
[2]
η
added
.
[1]
.
20
15
10
5
POWER-ADDED EFFICIENCY (%)
0
0
19.0 20.2 21.4 22.6 23.8 25.0 FREQUENCY
(GHz)
Figure 5. Noise Figure vs. Frequency
V
= VD2 = 5.0 V, fO = 22 GHz
D1
0
–15
–30
–45
2nd Harmonic
SMALL HARMONIC DISTORTION (dBc)
–60
24681012
OUTPUT POWER (dBm)
Figure 7. Second Harmonic and Gain Compression Characteristics
Gain
[2]
.
30
25
20
15
10
Notes:
1. Device tested while mounted on a HP83040 Modular Microcircuit Fixture calibrated at the coaxial connectors. Test results shown have been degraded by the fixture due to loss and impedance mismatch errors. The temperature coefficient of the fixture alone is approximately 0.003 dB/°C at 20 GHz.
2. Data obtained from wafer-probed measurements.
3. The temperature coefficient of noise figure was measured for one device mounted on a HP83040 Modular Microcircuit Fixture. The uncorrected result, <0.014 dB/°C, includes the effects of the fixture.
[2]
.
GAIN (dB)
600 520
RF INPUT
300
80
0
0 435 755 1235 1555 1880
Figure 8. HMMC-5023 Bonding Pad Locations. (Dimensions are in micrometers)
6-38
RF OUTPUT
300
105 (VG2 Y-axis) 0
Gold Plated Shim (Optional)
RF
RF
IN
IN
V
D1
V
D2
RF
OUT
V
G2
RF
OUT
≥20 pF Capacitor
≥20 pF Capacitor
To V
DC Power Supply
DD
V
D1
R
R
V
D2
R (typ.) ≥90 Ω
Figure 9a. Single DC Drain Supply. Figure 9b. Assembly for custom biasing of output gain
stages using an external chip resistor.
To V
(Optional)
RF
IN
G2
≥20 pF Capacitor
RF
IN
V
G2
V
RF
OUT
V
V
D1
D2
V
D1
G2
RF
OUT
V
D2
DC Power Supply
≥20 pF Capacitor
To V
DC Power Supply
D1
To VD2
DC Power Supply
Figure 9c. A VG2 DC supply or a resistive divider network can also be used to bias the output stages for custom applications.
Figure 9. HMMC-5023 Assembly Diagram Examples.
This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifica­tions. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative.
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