HP HMMC-5021DC, HMMC-5021RF, HMMC-5022DC, HMMC-5022RF, HMMC-5026DC Datasheet
...
6-28
2– 26.5 GHz GaAs MMIC
Traveling Wave Amplifier
Technical Data
Features
• Wide-Frequency Range:
2 - 26.5 GHz
• High Gain: 9.5 dB
• Gain Flatness: 0.75 dB
• Return Loss:
Input: -14 dB
Output: -13 dB
• Low-Frequency Operation
Capability: < 2 GHz
• Gain Control:
35 dB Dynamic Range
• Moderate Power:
20 GHz: P
-1dB
: 18 dBm
P
sat
: 20 dBm
26.5 GHz: P
-1dB
: 15 dBm
P
sat
: 17 dBm
Description
The HMMC-5021/22/26 is a
broadband GaAs MMIC Traveling
Wave Amplifier designed for high
gain and moderate output power
over the full 2 to 26.5 GHz frequency range. Seven MESFET
cascode stages provide a flat gain
response, making the
HMMC-5021/22/26 an ideal
wideband gain block. Optical
lithography is used to produce
gate lengths of ≈ 0.4 µm. The
HMMC-5021/22/26 incorporates
advanced MBE technology,
Ti-Pt-Au gate metallization,
silicon nitride passivation, and
polyimide for scratch protection.
HMMC-5021 (2-22 GHz)
HMMC-5022 (2-22 GHZ)
HMMC-5026 (2-26.5 GHz)
Absolute Maximum Ratings
Symbol Parameters/Conditions Units Min. Max.
[1]
V
DD
Positive Drain Voltage V 8.0
I
DD
Total Drain Current mA 250
V
G1
First Gate Voltage V -5 0
I
G1
First Gate Current mA -9 +5
V
G2
[2]
Second Gate Voltage V -2.5 +3.5
I
G2
Second Gate Current mA -7
P
DC
DC Power Dissipation watts 2.0
P
in
CW Input Power dBm 23
T
ch
Operating Channel Temp. °C +150
T
case
Operating Case Temp. °C -55
T
STG
Storage Temperature °C -6 5 +165
T
max
Maximum Assembly Temp.
°C +300
(for 60 seconds maximum)
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
A
= 25° C except for T
ch
, T
STG
, and T
max
.
2. Minimum voltage on VG2 must not violate the following: VG2(min) > VDD - 9 volts.
Chip Size: 2980 x 770 µm (117.3 x 30.3 mils)
Chip Size Tolerance: ± 10 µm (± 0.4 mils)
Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils)
Pad Dimensions: 75 x 75 µm (2.95 x 2.95 mils), or larger
5965-5449E
6-29
HMMC-5021/22/26 DC Specifications/Physical Properties,
[1]
applies to all part numbers
Symbol Parameters and Test Conditions Units Min. Typ. Max.
I
DSS
Saturated Drain Current
m A 115 180 250
(VDD = 7.0 V, VG1 = 0 V, VG2 = open circuit)
V
p
First Gate Pinch-off Voltage
(VDD = 7.0 V, IDD = 16 mA, VG2 = open circuit)
V -3.5 -1.5 -0.5
V
G2
Second Gate Self-Bias Voltage
V 2.1
(VDD = 7.0 V, VG1 = 0 V)
I
DSOFF
First Gate Pinch-off Current
(VG1)(VDD = 7.0 V, VG1 = -3.5 V, VG2 = open circuit)
mA 4
I
DSOFF
Second Gate Pinch-Off Current
(VG2)(VDD = 5.0 V, VG1 = 0 V, VG2 = -3.5 V)
mA 8
θ
ch-bs
Thermal Resistance
(T
backside
= 25° C)
°C/W 36
Note:
1. Measured in wafer form with T
chuck
= 25°C. (Except θ
ch-bs
.)
HMMC-5021/22/26 RF Specifications, V
DD
= 7.0 V, IDD(Q) = 150 mA, Zin = Z
o
= 50 Ω
[1]
2.0– 22.0 GHz 2.0– 26.5 GHz
Symbol Parameters/Conditions Units
HMMC-5021 HMMC-5022 HMMC-5026
Typ. Min. Typ. Max. Min. Typ. Max.
BW Guaranteed Bandwidth GHz 2-22 2 22 2 26.5
S
21
Small Signal Gain dB 10 8.0 10 12 7.5 9.5 12
∆S
21
Small Signal Gain Flatness dB ±0.5 ± 0.5 ± 1.0 ± 0.75 ± 1.0
RL
in(min)
Minimum Input Return Loss dB 16 10 16 10 14
RL
out(min)
Minimum Output Return Loss dB 13 10 13 10 13
Isolation Minimum Reverse Isolation dB 32 20 32 20 30
P
-1dB
Output Power at 1 dB Gain Comp. dBm 18 15 18 12 15
P
sat
Saturated Output Power dBm 20 17 20 14 17
Max. Second Harm. (2 <ƒ
o
<20),
H
2(max)
[P
o(ƒo
) = 17 dBm or P
-1dB
, d B c -25 -25 -20 -25 -20
whichever is less.]
Max. Third Harm. (2 <ƒ
o
< 20),
H
3(max)
[P
o(ƒo
) = 17 dBm or P
-1dB
, d B c -34 -34 -20 -34 -20
whichever is less.]
NF Noise Figure dB 8 8 10
Notes:
1. Small-signal data measured in wafer form with T
chuck
= 25°C. Large-signal data measured on individual devices
mounted in an HP83040 Series Modular Microcircuit Package @ T
A
= 25°C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. Upper -3 dB
corner frequency ≈ 29.5 GHz.
Loading...