DC – 8 GHz Terminated SPDT
Switch
Technical Data
Features
• Outputs Terminated in 50 Ω
When Off
• Frequency Range: DC-8 GHz
• Insertion Loss:
1.2 dB @ 8␣ GHz
• Isolation:
>70 dB @ 45 MHz
>35 dB @ 8 GHz
• Return Loss:
25 dB (Both Input and
Selected Output)
18 dB Unselected Output
• Switching Speed:
<20 µs (10%-90% RF)
•P
• Harmonics (DC Coupled):
Description
The HMMC-2007 is a GaAs monolithic microwave integrated circuit
(MMIC) designed for low insertion
loss and high isolation from DC to
8 GHz. It is intended for use as a
general-purpose, single-pole,
double-throw (SPDT), absorptive
switch. Two series and two shunt
MESFETs per throw provide
1.4␣ dB maximum insertion loss
and 38 dB typical isolation at
6␣ GHz. HMMC-2007 chips use
through-substrate vias to provide
ground connections to the chip
backside and minimize the
number of wire bonds required.
: 27 dBm
-1dB
<-80 dBc @ 10 dBm
Chip Size: 660 x 960 µm (25.9 x 37.8 mils)
Chip Size Tolerance: ± 10 µm (± 0.4 mils)
Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils)
Pad Dimensions: 120 x 120 µm (4.7 x 4.7 mils)
Absolute Maximum Ratings
Symbol Parameters/Conditions Units Min. Max.
V
sel
P
in
T
op
T
STG
T
max
P
unsel
Note:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device. T
Select Voltages 1 and 2 V -10.5 +10.5
RF Input Power dBm 27
Operating Temperature °C -5 5 +125
Storage Temperature °C -6 5 +165
Maximum Assembly Temp. °C +200
Power into Unselected Output dBm 27
HMMC-2007
[1]
= 25°C except for T
A
, T
STG
, and T
op
max
.
5965-5451E
7-26
DC Specifications/Physical Properties, T
= 25°C
A
Symbol Parameters and Test Conditions Units Min. Typ. Max.
I
SEL - 10V
I
SEL +10 V
V
p
BV
gss
RF Specifications, T
Leakage Current @ -10 V µA 200
Leakage Current @ +10 V µA20
Pinch-Off Voltage (V
I
= 4 mA, V
RFout2
V
RFin
= GND
SEL1
Breakdown Voltage (Test FET w/VD = VS = GND,
I
= -50 µA)
G
= 25°C, ZO = 50 Ω, V
A
= Vp, V
SEL2
= -10 V, V
= +2 V,
RFout2
= open circuit, V -6.75 -3.00
RFout1
V -13.0
sel-high
= +10 V, V
sel-low
= -10 V
Symbol Parameters and Test Conditions Units Min. Typ. Max.
BW Guaranteed Operating Bandwidth GHz DC 8.0
IL
ISO Isolation, RFin to Unselected RF
RL
in
RL
out-ON
RL
out-OFF
P
1 dB
t
s
Insertion Loss, RFin to Selected RF
, f = 6 GHz, OFF throw
out
, f = 6 GHz, OFF throw dB 38
out
d B 1.1 1.4
Input Return Loss @ 6 GHz dB 25
Output Return Loss, ON throw @ 6 GHz dB 25
Output Return Loss, OFF throw @ 6 GHz dB 18
Input Power where IL increases by 1 dB fin = 2 GHz dBm 27
Switching Speed, 10% –90% RF Envelope f
= 2 GHz µs20
in
7-27