
4Easy to Assemble & Compatible with High Speed SMT Assembly
4Designed for High Volume, Cost Effective OEM Designs
4-Element Wheatstone Bridges
Low Voltage Operations (2.0V)
4Compatible for Battery Powered Applications
Available in Tape & Reel Packaging
4High Volume OEM Assembly
Patented Offset and Set/Reset Straps
4Stray Magnetic Field Compensation
4Sensor Can Be Used in Strong Magnetic Field Environments
1- and 2-Axis Magnetic Sensors
HMC1001/1002/1021/1022
The Honeywell HMC100x and HMC102x
magnetic sensors are one and two-axis surface
mount sensors designed for low field magnetic
sensing. By adding supporting signal processing,
cost effective magnetometers or compassing
solutions are enabled. These small, low cost
solutions are easy to assemble for high volume
OEM designs. Applications for the HMC100x and
HMC102x sensors include Compassing,
Navigation Systems, Magnetometry, and Current
Sensing.
The HMC100x and HMC102x sensors utilize Honeywell’s Anisotropic Magnetoresistive (AMR) technology that provides
advantages over coil based magnetic sensors. They are extremely sensitive, low field, solid-state magnetic sensors
designed to measure direction and magnitude of Earth’s magnetic fields, from tens of micro-gauss to 6 gauss.
Honeywell’s Magnetic Sensors are among the most sensitive and reliable low-field sensors in the industry.
Honeywell continues to maintain product excellence and performance by introducing innovative solid-state magnetic
sensor solutions. These are highly reliable, top performance products that are delivered when promised. Honeywell’s
magnetic sensor solutions provide real solutions you can count on.
FEATURES BENEFITS

HMC1001/1002/1021/1022
HMC1001/1002 SPECIFICATIONS
Characteristics Conditions* Min Typ Max Units
Bridge Elements
Supply Vbridge (Vb) referenced to GND - 5.0 12 Volts
Resistance Bridge current = 10mA
per bridge
Operating Temperature
Storage Temperature Ambient, unbiased -55 175 °C
Field Range Full scale (FS) – total applied field -2 +2 gauss
Linearity Error Best fit straight line
Hysteresis Error 3 sweeps across ±2 gauss 0.05 0.10 %FS
Repeatability Error 3 sweeps across ±2 gauss 0.05 0.10 %FS
S/R Repeatability Output variation after alternate S/R pulses
Bridge Offset Offset = (OUT+) – (OUT-)
Field = 0 gauss after Set pulse, Vb = 8V
Sensitivity Set/Reset Current = 3A 2.5 3.2 4.0 mV/V/gauss
Noise Density @ 1Hz, Vb=5V 29 nV/sqrt Hz
Resolution 10Hz Bandwidth, Vb=5V 27
Bandwidth Magnetic signal (lower limit = DC) 5 MHz
Disturbing Field Sensitivity starts to degrade.
Use S/R pulse to restore sensitivity.
Sensitivity Tempco TA= -40 to 125°C, Vb=8V
TA= -40 to 125°C, Ibridge=5mA
Bridge Offset Tempco TA= -40 to 125°C, No Set/Reset
TA= -40 to 125°C, With Set/Reset
Bridge Ohmic Tempco TA= -40 to 125°C 0.25 %/°C
Cross-Axis Effect Cross field = 1 gauss, Happlied = ±1 gauss
Max. Exposed Field No perming effect on zero reading 10000 gauss
Set/Reset Straps
Ambient -55 150 °C
± 1 gauss
± 2 gauss
Vb = 5V, ISR = 3A
With set/reset
600
-60 -15 +30 mV
5 gauss
-0.32 -0.30
±0.03
±3
850
0.1
1.0
-0.06
±0.001
±0.5
1200
0.5
2.0
100
-0.28 %/°C
%/°C
%FS
ohms
%FS
µgauss
µV
Resistance Measured from S/R+ to S/R- 1.5 1.8 ohms
Current
Resistance Tempco TA= -40 to 125°C 0.37 %/°C
Offset Straps
Resistance Measured from OFF+ to OFF - 2.5 3.5 ohms
Offset Constant DC Current
Resistance Tempco TA= -40 to 125°C 0.39 %/°C
* Tested at 25°C except stated otherwise.
0.1% duty cycle, or less, 2µsec current pulse
Field applied in sensitive direction
2.0 3.0 5 Amp
46 51 56 mA/gauss
2

HMC1001/1002/1021/1022
HMC1021/1022 SPECIFICATIONS
Characteristics Conditions* Min Typ Max Units
Bridge Elements
Supply Vbridge (Vb) referenced to GND 2 5.0 25 Volts
Resistance Bridge current = 10mA
per bridge
Operating Temperature
Storage Temperature Ambient, unbiased -55 175 °C
Field Range Full scale (FS) – total applied field -6 +6 gauss
Linearity Error Best fit straight line
Hysteresis Error 3 sweeps across ±2 gauss 0.08 %FS
Repeatability Error 3 sweeps across ±2 gauss 0.08 %FS
Bridge Offset Offset = (OUT+) – (OUT-)
Field = 0 gauss after Set pulse, Vb = 5V
Sensitivity Set/Reset Current = 0.5A 0.8 1.0 1.25 mV/V/gauss
Noise Density @ 1Hz, Vb=5V 48 nV/sqrt Hz
Resolution 10Hz Bandwidth, Vb=5V 85
Bandwidth Magnetic signal (lower limit = DC) 5 MHz
Disturbing Field Sensitivity starts to degrade.
Use S/R pulse to restore sensitivity.
Sensitivity Tempco TA= -40 to 125°C, Vb= 5V
TA= -40 to 125°C, Ibridge=5mA
Bridge Offset Tempco TA= -40 to 125°C, No Set/Reset
TA= -40 to 125°C, With Set/Reset
Bridge Ohmic Tempco TA= -40 to 125°C 0.25 %/°C
Cross-Axis Effect Cross field = 1 gauss, Happlied = ±1 gauss +0.3 %FS
Max. Exposed Field No perming effect on zero reading 10000 gauss
Set/Reset Straps
Ambient -55 150 °C
± 1 gauss
± 3 gauss
± 6 gauss
800
-10 ±2.5 +11.25 mV
20 gauss
-0.32 -0.30
±0.05
1100
0.05
0.4
1.6
-0.06
±0.001
1300
-0.28 %/°C
%/°C
ohms
%FS
µgauss
Resistance Measured from S/R+ to S/R- 5.5 7.7 9 ohms
Current
Resistance Tempco TA= -40 to 125°C 0.37 %/°C
Offset Straps
Resistance Measured from OFF+ to OFF - 38 50 60 ohms
Offset Constant DC Current
Resistance Tempco TA= -40 to 125°C 0.39 %/°C
* Tested at 25°C except stated otherwise.
0.1% duty cycle, or less, 2µsec current pulse
Field applied in sensitive direction
www.honeywell.com 3
0.5 0.5 4.0 Amp
4.0 4.6 6.0 mA/gauss

HMC1001/1002/1021/1022
PACKAGE / PINOUT SPECIFICATIONS
Arrow indicates direction of applied field that generates a positive output voltage after a SET pulse.
BASIC DEVICE OPERATION
The Honeywell HMC100x and HMC102x Anisotropic Magneto-Resistive (AMR) sensors are simple resistive Wheatstone
bridges to measure magnetic fields and only require a supply voltage for the measurement. With power supply applied to
the bridges, the sensors convert any incident magnetic field in the sensitive axis directions to a differential voltage outputs.
In addition to the bridge circuits, each sensor has two on-chip magnetically coupled straps; the offset strap and the
set/reset strap. These straps are Honeywell patented features for incident field adjustment and magnetic domain
alignment; and eliminate the need for external coils positioned around the sensors.
The magnetoresistive sensors are made of a nickel-iron (Permalloy) thin -film deposited on a silicon wafer and patterned
as a resistive strip element. In the presence of a magnetic field, a change in the bridge resistive elements causes a
corresponding change in voltage across the bridge outputs.
www.honeywell.com 5