Honeywell HMC1001, HMC1002, HMC1021, HMC1022 User Manual

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SENSOR PRODUCTS

APPLICATIONS

Compassing Navigation Systems Attitude Reference Traffic Detection Medical Devices

Non-Contact Switch

1- and 2-Axis Magnetic

Sensors

HMC1001 / 1002 HMC1021 / 1022

onfigured as a 4-element

wheatstone bridge, these

magnetoresistive sensors convert magnetic fields to

a differential output volt-

age, capable of sensing

magnetic fields as low as

30 µgauss. These MRs

offer a small, low cost,

high sensitivity and high

reliability solution for low

field magnetic sensing.

Not actual size

FEATURES AND BENEFITS

Wide Field Range Field range up to ±6 gauss, (earth’s field = 0.5 gauss)

Small Package

Solid State These small devices reduce board assembly costs, improve reliability and ruggedness com-

On-Chip Coils Patented on-chip set/reset straps to reduce effects of temperature drift, non-linearity errors and

Cost Effective The sensors were specifically designed to be affordable for high volume OEM applications.

• Designed for 1- and 2-axis to work together to provide 3-axis (x, y, z) sensing

• 1-axis part in an 8-pin SIP or an 8-pin SOIC or a ceramic 8-pin DIP package

• 2-axis part in a 16-pin or 20-pin SOIC package

pared to mechanical fluxgates.

loss of signal output due to the presence of high magnetic fields Patented on-chip offset straps for elimination of the effects of hard iron distortion

LINEAR MAGNETIC FIELD SENSORS

HMC1001/1002 SPECIFICATIONS

Characteristics Conditions* Min Typ Max Unit

Bridge Supply Vbridge referenced to GND 5 12 Volts Bridge Resistance Bridge current = 10mA 600 850 1200 ohm Operating Temperature (4) -55 150 °C Storage T emper ature (4) Unbiased -55 175 °C Field Range (4) Full scale (FS), total applied field -2 +2 gauss Linearity Error (4) Best fit straight line ±1 gauss 0.1 0.5 %FS

±2 gauss 1 2 Hysteresis Error (4) 3 sweeps across ±2 gauss 0.05 0.10 %FS Repeatability Error (4) 3 sweeps across ±2 gauss 0.05 0.10 %FS S/R Repeatability (1) 10

S/R Repeatability (2) Output variation after alternate S/R pulses 2 100 µV Bridge Offset Offset = (OUT+) – (OUT-), Field=0 gauss -60 -15 30 mV

after Set pulse, Vbridge=8V Sensitivity S/R Current = 3A 2.5 3.2 4.0 mV/V/gauss Noise Density (4) Noise at 1 Hz, Vbridge=5V 29 nV/ Hz Resolution (4) Bandwidth=10Hz, Vbridge=5V 27 µgauss Bandwidth (4) Magnetic signal (lower limit = DC) 5 MHz OFFSET Strap Measured from OFFSET+ to OFFSET- 2.5 3.5 ohm OFFSET Strap Ω Tempco (4) T

A = -40 to 125° C 0.39 %/° C

OFFSET Field (4) Field applied in sensitive direction 46 51 56 mA/gauss Set/Reset Strap Measured from S/R+ to S/R- 1.5 1.8 ohm Set/Reset Current (2) (3) (4) 2 µs current pulse, 1% duty cycle 3.0 3.2 5 Amp Set/Reset Ω Tempco (4) T

A = -40 to 125° C 0.37 %/° C

Disturbing Field (4) Sensitivity starts to degrade. 3 gauss

Use S/R pulse to restore sensitivity. Sensitivity Tempco (4) T

A = -40 to 125° C Vbridge=8V -0.32 -0.3 -0.28 %/° C

Ibridge=5mA -0.06 Bridge Offset Tempco (4) T

A = -40 to 125° C no Set/Reset ±0.03 %/° C

Vbridge=5V with Set/Reset ±0.001 Resistance T empco (4) T

A = -40 to 125° C 0.25 %/° C

Cross-Axis Effect (4) Cross field=1gauss no Set/Reset ±3 %FS

(see AN-205) with Set/Reset +0.5 Max. Exposed Field (4) No perming effect on zero reading 10000 gauss Weight HMC1001 0.14 gram

HMC1002 0.53

(1) VBridge = 4.3V, IS/R = 3.2A, VOUT = VSET – VRESET (2) If VBridge = 8.0V, IS/R = 2.0A, lower S/R current leads to greater output variation. (3) Effective current from power supply is less than 1mA. (4) Not tested in production, guaranteed by characterization. (*) Tested at 25° C except otherwise stated.

Units: 1 gauss (g) = 1 Oersted (in air), = 79.58 A/m, 1G = 10E-4 Tesla, 1G = 10E5 gamma.

LINEAR MAGNETIC FIELD SENSORS

HMC1021/1022 SPECIFICATIONS

Characteristic Conditions** Min Typ Max Unit

Bridge Supply Vbridge referenced to GND 5 25 Volts Bridge Resistance Bridge current = 5mA 800 1100 1300 Ω Operating Temperature (1) HMC1021S, 1021Z, 1022 -55 150 °C

HMC1021D* - 55 300* Storage T emper ature (1) Unbiased -55 175 °C Field Range (1) Full scale (FS), — total applied field -6 +6 gauss

Best fit straight line ±1 gauss 0.05 Linearity Error (1) ±3 gauss 0.4 %FS

±6 gauss 1.6 Hysteresis Error (1) 3 sweeps across ±3 gauss 0.08 %FS Repeatability Error (1) 3 sweeps across ±3 gauss 0.08 %FS Bridge Offset Offset = (OUT+) – (OUT-), Field = 0 gauss -10 ±2.5 11.25 mV

After Set pulse, Vbridge=5V Sensitivity S/R Current = 0.5A 0.8 1.0 1.25 mV/V/gauss Noise Density (1) Noise at 1Hz, Vbridge=5V 48 nV/√Hz Resolution (1) Bandwidth=10Hz, Vbridge=5V 85 µgauss Bandwidth (1) Magnetic signal (lower limit = DC) 5 MHz OFFSET Strap Measured from OFFSET+ to OFFSET- 38 50 60 Ω OFFSET Strap Ω Tempco (1) T

A = -40 to 125° C 0.39 %/° C

OFFSET Field (1) Field applied in sensitive direction 4.0 4.6 6.0 mA/gauss Set/Reset Strap Measured from S/R+ to S/R- 5.5 7.7 9 Ω Set/Reset Current 2µs current pulse, 1% duty cycle 0.5 0.5 4.0 Amp Set/Reset Ω Tempco (1) T

A = -40 to 125° C 0.37 %/° C

Disturbing Field (1) Sensitivity starts to degrade. Use S/R 20 gauss

pulse to restore sensitivity. Sensitivity T empco (1) T

A = -40 to 125° C Vbridge=5V -0.32 -0.3 -0.28 %/° C

Ibridge=5mA -0.06 Bridge Offset Tempco (1) T

A = -40 to 125° C no Set/Reset ±0.05 %/° C

Vbridge=5V with Set/Reset ±0.001 Resistance T empco (1) Vbridge=5V , T

A = –40 to 125° C 0.25 %/° C

Cross-Axis Effect (1) Cross field=1 gauss

(see AN-205) Happlied=±1 gauss +0.3 %FS Max. Exposed Field (1) No perming effect on zero reading 10000 gauss Set/Reset (1) S/R current ≥ 0.5 Amps 30 µV

*Please reference data sheet, HTMC1021D for specifications. (1) Not tested in production, guaranteed by characterization.

Units: 1 gauss (G) = 1 Oersted (in air), 1G = 79.58 A/m, 1G = 10E-4 Tesla, 1G = 10E5 gamma

**Tested at 25° C except otherwise stated.

LINEAR MAGNETIC FIELD SENSORS

KEY PERFORMANCE DATA

Sensor output vs magnetic field

after being set or reset

1021/1022

Vb=5V

Reset Set

Voltage Output (mV)

2 sweeps

Output Voltage (mV)

-5

-10

-15

Sensor output vs magnetic field

Output is repeatable in field range ±20 Oe

1021/1022

Vb=5V

-20

2 sweeps

-40

-20

-2 -1 0 1 2

Field (Oe)

Sensor noise vs frequency

1000

1021/1022

Vb=5V

100

Noise Density (nV/rt Hz)

0.1 1 10 100 1000

Frequency (Hz)

Bridge resistance vs temperature

1400

All types

1300

Vb=5V

-60

-20 -15 -10 -5 0 5 10 1 5 20

Field (Oe)

Sensitivity vs temperature

1.3

Constant voltage power supply

1021/1022

1.2

1.1

0.9

0.8

Sensitivity (mV/V/Oe)

0.7

0.6

-50 -25 0 25 50 75 100 125

Vb=5V

Temperature (C)

Effects of set/reset pulse variation

2µ sec pulse duration, S/R voltage >4V is recommended

Vb=5V

1021/1022

0.8 Null Voltage (mV) (Set)

1200

1100

Resistance (ohm)

1000

900

-50 -25 0 25 5 0 75 100 125

Temperature (C)

0.6

0.4

Nonrepeatability

0.2

012345

no set/reset in

no set/reset in t

region

this region

Null Voltage (mV) (Reset) Sensitivity (mV/V/Oe) (Set)

Sensitivity (mV/V/Oe) (Reset)

Set/Reset Voltage (V)

)

PACKAGE / PINOUT SPECIFICATIONS

LINEAR MAGNETIC FIELD SENSORS

HMC1002—Two-Axis MR Microcircuit

GND1 (A) 1 OUT+ (A) 2

OFFSET- (A) 3

Vbridge (A) 4

OUT- (A)

GND2 (A)

S/R- (B)

GND1 (B)

Out+ (B) 9

OFFSET- (B) 10

Die A

Die B

20 S/R- (A) 19 NC 18 GND PLN 17 OFFSET (+A 16 S/R+ (A) 15 OFFSET+ (B 14 S/R+ (B) 13 GND2 (B) 12 OUT- (B) 11 Vbridge (B)

HMC1022—Two-Axis MR Circuit

OFFSET- (A) 1

OUT+ (A) 2

VBRIDGE (A) 3

OUT- (A) 4 OUT- (B) 5

VBRIDGE (B) 6

GND (A) 7 S/R+ (B) 8

•

Die A

Die B

16 OFFSET+ (A) 15 S/R- (A) 14 S/R+ (A) 13 GND (B) 12 OUT+ (B) 11 OFFSET- (B) 10 OFFSET+ (B) 9 S/R- (B)

HMC1001—One Axis MR Microcircuit

S/R+ 1

OFFSET+ 2

S/RGND Out+

OFFSET- 6

Vbridge 7

Out- 8

•

Die

HMC1021S—One-Axis MR Circuit

OUT+ 1

VBRIDGE 2

GND 3

OUT- 4

•

Die

HMC1021S

8 OFFSET7 OFFSET+ 6 S/R5 S/R+

OUT+ 1

VBRIDGE 2

GND 3

OUT- 4

HMC1021Z—One-Axis MR CircuitHMC1021D—One-Axis MR Circuit

Die

Arrow indicates direction of applied field that generates a

8 OFFSET7 OFFSET+

VBRIDGE 2

6 S/R5 S/R+

OFFSET+ 6

OFFSET- 7

positive output voltage after a SET pulse.

OUT+ 8

OUT- 1

S/R+ 3 GND 4

S/R- 5

•

Die

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