Datasheet HMC130 Datasheet (hittite)

查询HMC130供应商

5

MICROWAVE CORPORATION

Typical Applications

The HMC130 is ideal for:

• Microwave & VSAT Radios

• T est Equipment

• Military EW, ECM, C

• Space Telecom

3

I

Functional Diagram

v02.0802

HMC130

GaAs MMIC DOUBLE-BALANCED

MIXER, 6 - 11 GHz

Features

Conversion Loss: 7 dB
LO to RF and IF Isolation: >32 dB
Input IP3: +17 dBm
Small Size, No DC Bias Required

General Description

The HMC130 chip is a miniature double-balanced
mixer which can be used as an upconverter or
downconverter in the 6 to 11 GHz band. The chip
can be integrated directly into hybrid MMIC’s
without DC bias or external baluns to provide
an extremely compact mixer. It is ideally suited
for applications where small size, no DC Bias,
and consistent IC performance are required. This
mixer can operate over a wide LO drive input of
+9 to +15 dBm. It performs equally well as a Bi­Phase modulator or demodulator. See HMC137
data sheet

MIXERS - CHIP

Electrical Specifi cations, T

Frequency Range, RF & LO 6.0 - 11.0 GHz

Frequency Range, IF DC - 2.0 GHz

Conversion Loss 79dB

Noise Figure (SSB) 79dB

LO to RF Isolation 32 40 dB

LO to IF Isolation 35 40 dB

IP3 (Input) 13 17 dBm

IP2 (Input) 45 55 dBm

1 dB Gain Compression (Input) 6 9 dBm

* Unless otherwise noted, all measurements performed as downconverter, IF = 100 MHz

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= +25° C, LO Drive = +15 dBm

A

Parameter Min. Typ. Max. Units

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

Conversion Gain vs. Temperature
@ LO = +15 dBm

0

-5

-10

+ 25 C
+ 85 C

v02.0802

-15

CONVERSION GAIN (dB)

-20
5 6 7 8 9 10111213

FREQUENCY (GHz)

- 55 C

HMC130

GaAs MMIC DOUBLE-BALANCED

MIXER, 6 - 11 GHz

Isolation @ LO = +15dBm

-10

-15

-20

-25

-30

-35

ISOLATION (dB)

-40

-45

-50
5678910111213

RF/IF
LO/RF
LO/IF

FREQUENCY (GHz)

5

Conversion Gain vs. LO Drive

0

-5

-10

+ 9 dBm
+ 11 dBm
+ 13 dBm

CONVERSION GAIN (dB)

-15

-20
5678910111213

FREQUENCY (GHz)

+ 15 dBm

IF Bandwidth @ LO = +15 dBm

0

-5

-10

RESPONSE (dB)

-15

IF CONVERSION LOSS
IF RETURN LOSS (dB)

Return Loss @ LO = +15 dBm

0

-5

-10

-15

Return Loss (dB)

-20

-25
4 5 6 7 8 9 10 11 12 13 14

LO
RF

Frequency (GHz)

Upconverter Performance
Conversion Gain vs. LO Drive

0

-5

-10

-15

CONVERSION GAIN (dB)

+ 9 dBm
+ 11 dBm
+ 13 dBm
+ 15 dBm

MIXERS - CHIP

-20
0 0.5 1 1.5 2 2.5 3 3.5 4

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

-20
5678910111213

FREQUENCY (GHz)

5 - 15

MICROWAVE CORPORATION

Input IP3 vs. LO Drive

v02.0802

HMC130

GaAs MMIC DOUBLE-BALANCED

MIXER, 6 - 11 GHz

Input IP3 vs. Temperature
@ LO = +15 dBm

30

25

20

INPUT IP3 (dBm)

15

10

5

5 6 7 8 9 10 11 12 13

Input IP2 vs. LO Drive

80
75
70
65
60

IP2 (dBm)

55
50

MIXERS - CHIP

45
40

5678910111213

+11 dBm
+ 13 dBm
+ 15 dBm

FREQUENCY (GHz)

FREQUENCY (GHz)

+ 11 dBm
+ 13 dBm
+ 15 dBm

30

25

20

INPUT IP3 (dBm)

15

10

4 5 6 7 8 9 10 11 12 13

+ 25 C
+ 85 C

- 55 C

FREQUENCY (GHz)

Input IP2 vs. Temperature
@ LO = +15 dBm

80
75
70
65
60
55

INPUT IP2 (dBm)

50
45
40

5678910111213

FREQUENCY (GHz)

+ 25 C
+ 85 C

- 55 C

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Input P1dB vs. Temperature

@ LO = +15 dBm

13

12

11

10

P1dB (dBm)

9

8

6 7 8 9 10 11 12 13

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

+ 25 C
+ 85 C

- 55 C

FREQUENCY (GHz)

MICROWAVE CORPORATION

v02.0802

HMC130

GaAs MMIC DOUBLE-BALANCED

MIXER, 6 - 11 GHz

Harmonics of LOMxN Spurious @ IF Port

nLO

mRF01234

0 xx 17.16 26.0 9.0 37.33

1 12.83 0 39.83 53.0 33.66

2 69.0 76.5 57.83 76.83 71.0

3 75.33 76.16 78 61.66 78.16

4 66.83 74.83 77.33 78.16 79.66

RF Freq. = 9.1 GHz @ -10 dBm
LO Freq. = 9.0 GHz @ +13 dBm
Measured as downconverter

Absolute Maximum Ratings

LO Drive +27 dBm

Storage Temperature -65 to +150 °C

Operating Temperature -55 to +85 °C

nLO Spur @ RF Port

LO Freq. (GHz) 1 2 3 4

9.0 45 56 46 79

10.5 42 56 56 62

12.0 36 54 43 60

13.5 35 69 38 57

15.0 35 58 44 ?

16.5 32 49 40 ?

LO = +13 dBm
All values in dBc below input LO level measured at RF port

5

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MIXERS - CHIP

5 - 17

5

MICROWAVE CORPORATION

Outline Drawing

v02.0802

HMC130

GaAs MMIC DOUBLE-BALANCED

MIXER, 6 - 11 GHz

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. BOND PADS ARE .004” SQUARE

3. TYPICAL BOND PAD SPACING CENTER TO CENTER
IS .006” EXCEPT AS SHOWN

4. DIE THICKNESS = .004” [.100 MM]

5. BACKSIDE METALIZATION: GOLD

6. BACKSIDE METAL IS GROUND

7. BOND PAD METALIZATION: GOLD

Pad Descriptions

MIXERS - CHIP

Pad Number Function Description Interface Schematic

1LO

2IF

3RF

GND The backside of the die must connect to RF ground.

This pin is DC coupled and matched to 50 Ohm

from 6 to 11 GHz.

This pin is DC coupled. For applications not requiring opera-

tion to DC, this port should be DC blocked externally using a

series capacitor whose value has been chosen to pass the

necessary IF frequency range. For operation to DC this pin

must not source or sink more than 2mA of current or die non-

function and possible die failure will result.

This pin is DC coupled and matched to 50 Ohm

from 6 to 11 GHz.

5 - 18

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

Assembly Diagram

v02.0802

HMC130

GaAs MMIC DOUBLE-BALANCED

MIXER, 6 - 11 GHz

5

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instr ument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize

inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and fl at.

Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scr ubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding

Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MIXERS - CHIP

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