Hitachi k3377 Diagram
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK3377
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-state Resistance
DS(on)1
R
★
★
★
• Low C
= 44 mΩ MAX. (VGS = 10 V, ID = 10 A)
DS(on)2
R
= 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
iss
iss
: C
= 760 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
★
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature T
Storage Temperature T
★
Single Avalanche Current
★
Single Avalanche Energy
Note1
C
= 25°C) P
A
= 25°C) P
Note2
Note2
DSS
GSS
D(DC)
D(pulse)
I
ch
stg
AS
I
AS
E
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3377
2SK3377-Z
60 V
±20 V
±20 A
±50 A
T
T
30 W
1.0 W
150 °C
–55 to +150 °C
15 A
23 mJ
TO-251
TO-252
(TO-251)
(TO-252)
Notes 1.
2.
PW ≤ 10
Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
µ
s, Duty cycle ≤ 1 %
THERMAL RESISTANCE
Channel to Case R
Channel to Ambient R
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14328EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
th(ch-C)
th(ch-A)
4.17 °C/W
125 °C/W
The mark ★ shows major revised points.
©
1999,2000
★
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3377
Drain to Source On-state Resi stance R
Gate to Source Cut-off Voltage V
DS(on)1VGS
DS(on)2VGS
R
GS(off)VDS
= 10 V, ID = 10 A 35 44 m
= 4.0 V, ID = 10 A 54 78 m
= 10 V, ID = 1 mA 1.5 2.0 2. 5 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 10 A 5 10 S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DSS
VDS = 60 V, VGS = 0 V 10
GSS
VGS = ±20 V, VDS = 0 V ±10
iss
VDS = 10 V 760 pF
oss
VGS = 0 V 150 pF
rss
f = 1 MHz 71 pF
d(on)ID
d(off)
F(S-D)IF
= 10 A 13 ns
r
GS(on)
V
= 10 V 170 ns
VDD = 30 V 43 ns
f
RG = 10
G
ID = 20 A 17 nC
GS
VDD = 48 V 3.0 nC
GD
V
Ω
GS(on)
= 10 V 4.7 nC
34 ns
= 20 A, VGS = 0 V 1.0 V
rr
IF = 20 A, VGS = 0 V 39 ns
rr
di/dt = 100 A/µs62nC
µ
µ
Ω
Ω
A
A
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
L
V
DD
PG.
RG = 25 Ω
50 Ω
VGS = 20 → 0 V
BV
DSS
I
AS
V
I
D
V
DD
DS
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
IG = 2 mA
50 Ω
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
R
G
PG.
GS
V
0
τ = 1 s
Duty Cycle ≤ 1 %
R
V
DD
τ
µ
GS
V
Wave Form
I
D
Wave Form
V
GS
10 %
0
90 %
I
D
10 %
0
t
d(on)
r
t
on
t
90 %
V
GS
(on)
90 %
I
D
10 %
t
d(off)
t
f
t
off
2
Data Sheet
D14328EJ1V0DS00
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