DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3377
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
∙Low On-state Resistance
RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
∙ Low Ciss : Ciss = 760 pF TYP.
∙Built-in Gate Protection Diode
∙TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER |
PACKAGE |
|
|
2SK3377 |
TO-251 |
|
|
2SK3377-Z |
TO-252 |
|
|
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
|
Drain to Source Voltage |
VDSS |
60 |
V |
|
|
Gate to Source Voltage |
VGSS |
±20 |
V |
|
|
Drain Current (DC) |
ID(DC) |
±20 |
A |
|
|
Drain Current (Pulse) Note1 |
ID(pulse) |
±50 |
A |
|
|
Total Power Dissipation (TC = 25°C) |
P T |
30 |
W |
(TO-252) |
|
|
||||
|
Total Power Dissipation (TA = 25°C) |
P T |
1.0 |
W |
|
|
Channel Temperature |
Tch |
150 |
°C |
|
|
Storage Temperature |
Tstg |
–55 to +150 |
°C |
|
|
Single Avalanche Current Note2 |
IAS |
15 |
A |
|
|
Single Avalanche Energy Note2 |
EAS |
23 |
mJ |
|
Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, R G = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case |
Rth(ch-C) |
4.17 |
°C/W |
Channel to Ambient |
Rth(ch-A) |
125 |
°C/W |
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14328EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan
The mark shows major revised points. |
© |
1999,2000 |
|
2SK3377
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
Drain to Source On-state Resistance |
RDS(on)1 |
VGS = 10 V, ID = 10 A |
|
35 |
44 |
mΩ |
|
|
|
|
|
|
|
|
RDS(on)2 |
VGS = 4.0 V, ID = 10 A |
|
54 |
78 |
mΩ |
|
|
|
|
|
|
|
Gate to Source Cut-off Voltage |
VGS(off) |
VDS = 10 V, ID = 1 mA |
1.5 |
2.0 |
2.5 |
V |
|
|
|
|
|
|
|
Forward Transfer Admittance |
| yfs | |
VDS = 10 V, ID = 10 A |
5 |
10 |
|
S |
|
|
|
|
|
|
|
Drain Leakage Current |
IDSS |
VDS = 60 V, VGS = 0 V |
|
|
10 |
μA |
|
|
|
|
|
|
|
Gate to Source Leakage Current |
IGSS |
VGS = ±20 V, VDS = 0 V |
|
|
±10 |
μA |
|
|
|
|
|
|
|
Input Capacitance |
Ciss |
VDS = 10 V |
|
760 |
|
pF |
|
|
|
|
|
|
|
Output Capacitance |
Coss |
VGS = 0 V |
|
150 |
|
pF |
|
|
|
|
|
|
|
Reverse Transfer Capacitance |
Crss |
f = 1 MHz |
|
71 |
|
pF |
|
|
|
|
|
|
|
Turn-on Delay Time |
td(on) |
ID = 10 A |
|
13 |
|
ns |
|
|
|
|
|
|
|
Rise Time |
tr |
VGS(on) = 10 V |
|
170 |
|
ns |
|
|
|
|
|
|
|
Turn-off Delay Time |
td(off) |
VDD = 30 V |
|
43 |
|
ns |
|
|
RG = 10 Ω |
|
|
|
|
Fall Time |
tf |
|
34 |
|
ns |
|
|
|
|
|
|
|
|
Total Gate Charge |
QG |
ID = 20 A |
|
17 |
|
nC |
|
|
|
|
|
|
|
Gate to Source Charge |
QGS |
VDD = 48 V |
|
3.0 |
|
nC |
|
|
|
|
|
|
|
Gate to Drain Charge |
QGD |
VGS(on) = 10 V |
|
4.7 |
|
nC |
|
|
|
|
|
|
|
Body Diode Forward Voltage |
VF(S-D) |
IF = 20 A, VGS = 0 V |
|
1.0 |
|
V |
|
|
|
|
|
|
|
Reverse Recovery Time |
trr |
IF = 20 A, VGS = 0 V |
|
39 |
|
ns |
|
|
di/dt = 100 A/μs |
|
|
|
|
Reverse Recovery Charge |
Qrr |
|
62 |
|
nC |
|
|
|
|
|
|
|
|
TEST CIRCUIT 1 AVALANCHE CAPABILITY |
TEST CIRCUIT 2 SWITCHING TIME |
|
|
|
D.U.T. |
|
|
|
|
|
|
|
|
RG = 25 Ω |
L |
|
D.U.T. |
|
|
|
|
|
|
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|
VGS |
|
|
|
||
PG. |
|
|
|
RL |
|
|
90 % |
|
|
|
|
VGS |
|
|
VGS(on) |
||
50 Ω |
VDD |
|
|
10 % |
|
|
||
|
RG |
Wave Form |
|
|
|
|||
VGS = 20 → 0 V |
|
|
VDD |
0 |
|
|
|
|
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|
PG. |
|
|
|
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||
|
|
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|
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ID |
90 % |
|
90 % |
|
BVDSS |
|
|
|
|
|
ID |
|
IAS |
VGS |
ID |
0 10 % |
|
10 % |
|||
|
VDS |
|
|
|||||
|
0 |
|
|
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||||
ID |
|
Wave Form |
|
|
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||
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|||
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td(on) |
tr |
td(off) |
tf |
|
VDD |
|
|
τ |
|
||||
|
|
|
τ = 1 μs |
|
|
ton |
|
toff |
|
|
|
|
|
|
|
||
|
Starting Tch |
|
Duty Cycle ≤ 1 % |
|
|
|
|
|
TEST CIRCUIT 3 GATE CHARGE
|
D.U.T. |
|
|
IG = 2 mA |
RL |
|
|
|
PG. |
50 Ω |
VDD |
2 |
Data Sheet D14328EJ1V0DS00 |