q5.25" Half-height size built-in type CD-ROM Drive
qEnhanced IDE (ATAPI) bus interface (SFF8020 rev.2.6)
Standard 2.54mm pitch bus connector for non-shielded type cable
q24X MAX (10.3X-24X) speed data transfer, Full CAV mode
qHigh speed access: typical 90 ms
qLarge buffer memory for lookahead cache: 128 kbytes
qHigh data transfer rates (PIO mode4): Max 16.6 Mbytes/s
qMulti Word DMA mode 2, Single Word DMA mode 2
qMultimedia PC3 compatible
qPhoto-CD Multisession compatible
qCD-RW compatible
qAddressing Method 2 for fixed length Packet (CD-R ORANGE BOOK Part 2)
qCD Extra compatible
qCD-DA (Digital Audio) data output through the IDE bus
qMTBF: 100,000 POH
qDust-free chassis
qEmbedded error correction EDC & ECC for Mode1 & Mode2 Form1
qTray type auto loading
q3-way disc ejection (Software, OPEN/CLOSE button, Emergency eject)
2. General Description
2.1 Application Disc Types(confirmed by Red, Yellow, Green, Orange Book)
CD-ROM Mode-1 data disc
CD-ROM Mode-2 data disc
CD-ROM XA
CD-I
Photo-CD Multisession
CD Audio disc
Mixed mode CD-ROM disc (data and audio)
CD-Extra
CD-R
CD-RW
2.2 Disc Diameter120 mm
80 mm (with adapter at vertical mounting mode)
2.3 Data Block Size2,048 bytes (Mode-1)
2,336 bytes (Mode-2)
2.4 Storage Capacity650 Mbytes (Mode-1)(1M=220=1,048,576)
742 Mbytes (Mode-2)
Conditions: 333,000 blocks (74 min.)for recorded area
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HITACHI CD-ROM DRIVE CDR-8330 SPECIFICATIONS
3. Drive Performance
3.1 Interface Enhanced IDE (ATAPI Command Rev 2.6)
3.4.2 Burst Transfer Rate
PIO Mode 416.6 Mbytes/s max.
Single Word DMA Mode 28.3 Mbytes/s max.
Multi Word DMA Mode 216.6 Mbytes/s max.
3.5 Access time
Average (1/3 Stroke)90 ms (Typical)(Note 1)
Full Stroke150 ms (Typical)(Note 2)
Note:1) Average of 100 access operations, from 15-min 00-s 00-blk to 35-min 00-s 00-
blk, with latency.
2) Average of 100 access operations, from 00-min 02-s 00-blk to 59-min 59-s 74blk, with latency.
3.6 Data Error RateLess than 10
Less than 10
Condition: It is assumed that raw error rate of the disc is 10-3 in the worst case.
Note: Excluding " retries "
3.7 Spin Up Time
Spin up from standby modeTypical 6 s to drive ready mode
Spin up with tray loadingTypical 10 s to drive ready mode
Note: Photo-CD (Multisession) is not applicable.
-12
-9
(Mode-1)
(Mode-2)
3.8 Buffer Memory Size128 kbytes
Drive performance is guranteed on the Hitachi standard test conditions. That includes PCs, test discs, check
programs, and others with normal environmental conditions.
4. Environmental Conditions
4.1 Ambient Temperature
Operating5 oC to 45 oC
Storage / Transportation-30 oC to 60 oC
4.2 Approval Temperature rise45 oC Max. at the center of Top Cover
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HITACHI CD-ROM DRIVE CDR-8330 SPECIFICATIONS
4.3 Temperature Gradient10 oC/h
4.4 Relative Humidity
Operating15% to 85% (Non-Condensing)
Storage/Transportation10% to 90% (Non-Condensing)
4.5 Dew Point Temperature RestrictionsLess than 29 oC
4.6 Vibration
OperationLess than 1.96 m/s2 (0.2G) (CD-ROM data read)
5 to 300 Hz Sine Wave, swept at a rate of 3 oct./min.
Note:Excluding Disc resonance point.
StorageLess than 9.8 m/s2 (1.0G)
5 to 300 Hz swept at a rate of 1 oct./min.
Note: Each of 3 direction, Power OFF and no disc loaded
TransportationPacked unit to be applied random vibration for 20 min
at 5 to 50 Hz and 0.82G amplitude.
Check unit for satisfactory electrical operation and no physical damage.
Note: Z-axis directions, Power OFF and no disc loaded
4.7 Shock
Check unit for satisfactory electrical operation and no physical damage.
OperationLess than 9.8 m/s2 (1.0 G), 11ms Half sine wave Shock
StorageLess than 490 m/s2 (50 G), 10ms Square Wave Shock
Note: Each 3 directions, Power OFF and no disc loaded
4.8 Drop ImpactLess than 60 cm
Note: Bulk package, 1 Corner, 3 Edges, 6 Faces.
5. Reliability
5.1 MTBF100,000 Power On hours (POH)
Assumption:Used in a normal office environment
-POH per year3,000
-ON/OFF cycles per year480
-Operating duty cycle20% of Power on time (Seek: 5% of operating time)
5.2 MTTR0.5 h
5.3 Loading Operation Life10,000 times (1 time :loading and unloading)
6. Electro Static Discharge Susceptibility
Up to 5 kVNo read error
From 5 kV to 20 kVNo damage (Read errors are allowed)
Test Conditions :C = 150pF, R = 330 ohms, 50 times discharge