HIT HSK120 Datasheet
HSK120
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-171C(Z)
Features
• Low reverse recovery time. (trr =3.0ns max)
• LLD package is suitable for high density surface mounting and high speed assembly
Ordering Information
Type No. Cathode band Package Code
HSK120 White LLD
Rev 3
Jan. 1999
Outline
Cathode band
12
Cathode band
12
1. Cathode
2. Anode
HSK120
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak
RM
R
FM
*1
I
FSM
forward surge current
Average rectified current I
O
Junction temperature Tj 175 °C
Storage temperature Tstg -65 to +175 °C
Note 1. Within 1µs forward surge current..
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Capacitance C — — 3.0 pF VR = 0V, f = 1 MHz
Reverse recovery
t
rr
time
— — 0.8 V IF = 10 mA
70 — — V IR = 5µA
— — 0.1 µAVR = 60V
— — 3.0 ns IF = 10 mA, VR = 6V, RL = 50Ω, Irr = 0.1I
70 V
60 V
450 mA
4A
150 mA
R
2
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