HIT HSC277 Datasheet

HSC277

Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch

ADE-208-413 (Z)

Dec. 1995

Features

• Low forward resistance. (rf = 0.7 max)

• U ltra small F lat P ackage (UFP) is suitable for surface mount design.

Ordering Information

Type No. Cathode Mark Package Code

HSC277 Laser UFP

Rev. 0

Outline

Cathode mark

12

1. Cathode

2. Anode

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Reverse voltage V
Junction temperature Tj 125 °C
Power dissipation Pd 150 mW
Operation temperature Topr –20 to +60 °C
Storage temperature Tstg –45 to +125 °C

R

35 V

HSC277

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Reverse voltage V
Reverse current I
Forward voltage V

R

R

F

Capacitance C — — 1.2 pF VR = 6V, f = 1MHz
Forward resistance r

f

35 — — V IR = 10µA
——50µAVR = 25V
— — 1.0 V IF = 10mA

— — 0.7 Ω IF = 2mA, f = 100MHz

–2

10

–3

10

–4

10

F

–5

10

–6

10

–7

Forward current I (A)

10

–8

10

–9

10

0

0.2 0.4

0.6

Forward voltage V (V)

0.8

F

Fig.1 Forward current Vs. Forward voltage

1.0

2