HIT HSC276 Datasheet
HSC276
Silicon Schottky Barrier Diode for Mixer
ADE-208-421A(Z)
Features
• High forward current, Low capacitance.
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HSC276 C2 UFP
Rev 1
Dec. 1998
Outline
Cathode mark
Mark
12
C2
1. Cathode
2. Anode
HSC276
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Average rectified current I
R
O
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Reverse current I
Forward current I
R
R
F
Capacitance C — — 0.85 pF VR = 0.5V, f = 1 MHz
ESD-Capability
*1
— 30 — — V C=200pF , Both forward and reverse direction
Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
3——VIR = 1 mA
——50µAVR = 0.5V
35 — — mA VF = 0.5V
3V
30 mA
1 pulse.
2
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