HIT HSB83YP Datasheet

HSB83YP

Silicon Epitaxial Planar Diode for High Voltage Switching

Features

• High reverse voltage. (VR=250V)

• CMPAK- 4 package which has two devices parallel connection,

is suitable for high density surface mounting.

Ordering Information

Type No. Laser Mark Package Code

HSB83YP F7 CMPAK-4

ADE-208-843(Z)

Rev 0

Mar 2000

Outline

4

1

(Top View)

3

2

1 Anode
2 Anode
3 Cathode
4 Cathode

HSB83YP

Absolute Maximum Ratings (Ta = 25°C) *

2

Item Symbol Value Unit

Peak reverse voltage V
Reverse voltage V
Peak forward current I
Non-Repetitive peak

RM

R

FM

*1

I

FSM

300 V
250 V
300 mA
2A

forward surge current
Average rectified current I

O

100 mA
Junction temperature Tj 125 °C
Storage temperature Tstg -55Å`+125 °C

Note 1. Value at duration of 10msec.
Note 2. Two device total.

Electrical Characteristics (Ta = 25°C) *

1

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V
Reverse current I

F

R1

I

R2

−−1.2 V IF = 100 mA

−−0.2 µAVR = 250V

−−100 VR = 300V

Capacitance C −−3.0 pF VR = 0V, f = 1 MHz
Reverse recovery

t

rr

−−100 ns IF = IR =30 mA, Irr = 3mA, RL= 100Ω

time
Note 1. Per one device.

2