HIT HSB276S Datasheet
HSB276S
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-780 (Z)
Features
• High forward current, Low capacitance.
• HSB276S which is interconnected in series configuration is designed for balanced mixer use.
• CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSB276S C2 CMPAK
Rev 0
Mar. 1999
Outline
3
2
(Top View)
1
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
HSB276S
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Reverse voltage V
Average rectified current I
R
*1
O
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Note 1. Per one device
3V
30 mA
Electrical Characteristics (Ta = 25°C)
*2
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Reverse current I
Forward current I
R
R
F
3 VIR = 1 mA
50 µAVR = 0.5V
35 mA VF = 0.5V
Capacitance C 0.90 pF VR = 0.5V, f = 1 MHz
Capacitance deviation ∆ C 0.10 pF VR = 0.5V, f = 1 MHz
ESD-Capability
*1
30 V C=200pF , Both forward and reverse
direction 1 pulse.
Note 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
Note 2. Per one device
2
Loading...