HIT HSB276AS Datasheet
HSB276AS
Silicon Schottky Barrier Diode for Balanced Mixer
ADE-208-838(Z)
Feb. 2000
Features
• High forward current, Low capacitance.
• HSB276AS which is interconnected in series configuration is designed for balanced mixer use.
• CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HSB276AS E8 CMPAK
Rev. 0
Outline
3
2
(Top View)
1
1 Cathode 2
2 Anode 1
3 Cathode 1
Anode 2
HSB276AS
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
V
RRM
voltage
Reverse voltage V
Average rectified current I
R
*1
O
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C
Note 1. Per one device
5V
3V
30 mA
Electrical Characteristics (Ta = 25°C)
*2
Item Symbol Min Typ Max Unit Test Condition
Reverse voltage V
Reverse current I
Forward current I
R
R
F
3——VIR = 1 mA
——50µAVR = 0.5V
35 — — mA VF = 0.5V
Capacitance C — — 0.90 pF VR = 0.5V, f = 1 MHz
Capacitance deviation ∆ C — — 0.10 pF VR = 0.5V, f = 1 MHz
ESD-Capability
*1
— 30 — — V C = 200pF , R = 0Ω
Both forward and reverse direction 1 pulse.
Note 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V
Note 2. Per one device
2
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