HIT HSB226YP Datasheet

HSB226YP

Silicon Schottky Barrier Diode

ADE-208-842(Z)

Features

• Low reverse current, Low capacitance.

• CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No. Laser Mark Package Code

HSB226YP E5 CMPAK-4

Rev. 0

Mar. 2000

Outline

4

1

(Top View)

3

2

1 Anode
2 Anode
3 Cathode
4 Cathode

HSB226YP

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Value Unit

Repetitive peak reverse

V

RRM

voltage
Non-Repetitive peak

I

FSM

*1*2

forward surge current
forward current I

*2

F

Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C

Notes: 1. 10msec sine wave 1 pulse
Notes: 2. Two device total

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V

Reverse current I

F1

V

F2

R

Capacitance C −−2.80 pF VR = 1V, f = 1 MHz
Note: 1. Per one device

−−0.33 V IF = 1 mA

−−0.38 V IF = 5 mA

−−0.45 µAVR = 20V

25 V

200 mA

50 mA

2