HIT HSB0104YP Datasheet

HSB0104YP

Silicon Schottky Barrier Diode

for High Speed Switching

ADE-208-730(Z)

Dec. 1998

Features

• Can be used for protection of signal-bus lines.

• The mounting efficiency has been improved by incorporating two low-loss diode element into a

CMPAK-4 package.

Ordering Information

Type No. Laser Mark Package Code

HSB0104YP E4 CMPAK-4

Rev 0

Outline

4

1

(Top View)

3

2

1 Anode
2 Anode
3 Cathode
4 Cathode

HSB0104YP

Absolute Maximum Ratings (Ta = 25°C)

*1

Item Symbol Value Unit

Repetitive peak reverse

V

RRM

40 V

voltage
Average rectified current I
Non-Repetitive peak

I

o

FSM

*2

100 mA
3A

forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to +125 °C

Note: 1. Per one device
Note: 2. 10msec sine wave 1 pulse

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Forward voltage V
Reverse current I

F

R

Capacitance C — 20 — pF VR = 0V, 1=1MHz

— — 0.58 V IF = 100 mA
——50µAVR = 40V

2