HIT HRF502A Datasheet
HRF502A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-245C(Z)
Features
• Low forward voltage drop and suitable for high effifiency rectifying.
• DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. Laser Mark Package Code
HRF502A 502A DO-214
Rev 3
Sep. 1997
Outline
Cathode mark
Mark
502A
12
Lot No.
1. Cathode
2. Anode
HRF502A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
*1
V
RRM
voltage
Average rectified current I
Non-Repetitive peak
*1
o
*2
I
FSM
forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg -40 to +125 °C
Note: 1. See from Fig.4 to Fig.7
Note: 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
ESD-Capability — 250 — — V C=200pF , R=0Ω , Both forward and reverse
Thermal resistance Rth(j-a) — 90 — °C/W Glass epoxy board
Rth(j-c) — 42 — Tc=25°C
Note: 1. Glass epoxy board
— — 0.40 V IF = 5A
— — 1.0 mA VR = 20V
20 V
5A
100 A
direction 1 pulse.
*1
6.8
Land size
2.0
3.5
Unit: mm
2
Loading...