HIT HRF32 Datasheet
HRF32
Silicon Schottky Barrier Diode for Rectifying
ADE-208-164D(Z)
Features
• Good for high-frequency rectify.
• LRP structure ensures higher reliability.
Ordering Information
Type No. Laser Mark Package Code
HRF32 32 LRP
Rev 4
Jul. 1997
Outline
Cathode mark
Mark
12
3 2
1. Cathode
2. Anode
HRF32
t
t
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
*1
V
RRM
voltage
Average rectified current I
Non-Repetitive peak
*1
o
*2
I
FSM
forward surge current
Junction temperature Tj 125 °C
Storage temperature Tstg -40 to +125 °C
Note: 1. See from Fig.4 to Fig.7
Note: 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage V
Reverse current I
F
R
ESD-Capability — 150 — — V C=200pF , R=0Ω, Both forward and reverse
Thermal resistance Rth(j-a) — — 108 °C/W Alumina board
Note: 1. Alumina board
— — 0.8 V IF = 1.0A
— — 1.0 mA VR = 90V
— — 157 Print board
90 V
1.0 A
20 A
direction 1 pulse.
*1
*2
(25mm ~25mm ~0.64
2.0mm
4.2mm
2.0mm
Note: 2. Print board
(25mm ~25mm ~1.64
2.0mm
4.2mm
2.0mm
2
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