HIT HN58X24512FPI Datasheet

HN58X24512I

Two-wire serial interface

512k EEPROM (64-kword × 8-bit)

ADE-203-1239 (Z)

Preliminary

Rev. 0.0

Jan. 10, 2001

Description

HN58X24512I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).
It realizes high speed, low power consumption and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 128­byte page programming function to make it’s write operation faster.

Note: Hitachi’s serial EEPROM are authorized for using consumer applications such as cellular phone,

camcorders, audio equipment. Therefore, please contact Hitachi’s sales office before using
industrial applications such as automotive systems, embedded controllers, and meters.

Features

• Single supply: 1.8 V to 5.5 V

• Two-wire serial interface (I2CTM serial bus*1)

• Clock frequency: 1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 2.5 V)

• Power dissipation:
 Standby: 3 µA (max)
 Active (Read): 2 mA (max)
 Active (Write): 5 mA (max)

• Automatic page write: 128-byte/page

• Write cycle time: 10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 2.5 V)

• Endurance: 105 Cycles (Page write mode)

• Data retention: 10 Years

Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.

HN58X24512I

• Small size packages: SOP-8pin (200 mil-wide)

• Shipping tape and reel: 2,500 IC/reel

• Temperature range: –40 to +85°C

Note: 1. I2C is a trademark of Philips Corporation.

Ordering Information

Type No. Internal organization Operating voltage Frequency Package

HN58X24512FPI 512k bit

(65536× 8-bit)

Pin Arrangement

2.5 V to 5.5 V 1 MHz 200 mil 8-pin plastic SOP

1.8 V to 2.5 V 400 kHz

8-pin SOP

A0
A1

NC

V

SS

Pin Description

Pin name Function

A0, A1 Device address
SCL Serial clock input
SDA Serial data input/output
WP Write protect
V

CC

V

SS

NC No connection

Power supply
Ground

1
2
3
4

(Top view)

8
7
6
5

V

CC

WP
SCL
SDA

2

Block Diagram

HN58X24512I

V

CC

V

SS

High voltage generator

Memory array

WP

Control

logic

X decoderY decoder

A0, A1

SCL

Address generator

Y-select & Sense amp.

SDA

Serial-parallel converter

Absolute Maximum Ratings

Parameter Symbol Value Unit

Supply voltage relative to V
Input voltage relative to V

SS

SS

Operating temperature range*

1

V

CC

Vin –0.5*2 to +7.0*
Topr –40 to +85 ˚C

Storage temperature range Tstg –65 to +125 ˚C
Notes: 1. Including electrical characteristics and data retention.

2. Vin (min): –3.0 V for pulse width 50 ns.

3. Should not exceed V

+ 1.0 V.

CC

–0.6 to +7.0 V

3

V

DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage V

Input high voltage V
Input low voltage V

CC

V

SS

IH

IL

Operating temperature Topr –40 — 85 ˚C
Notes: 1. VIL (min): –1.0 V for pulse width 50 ns.

2. V

(max): VCC + 1.0 V for pulse width 50 ns.

IH

1.8 — 5.5 V
000V
VCC × 0.7 — VCC + 0.5*2V

1

–0.3*

—V

× 0.3 V

CC

3

HN58X24512I

DC Characteristics (Ta = –40 to +85˚C, VCC = 1.8 V to 5.5 V)

Parameter Symbol Min Typ Max Unit Test conditions

Input leakage current I

Output leakage current I
Standby VCC current I
Read VCC current I
Write VCC current I
Output low voltage V

LI

LO

SB

CC1

CC2

OL2

V

OL1

Capacitance (Ta = 25˚C, f = 1 MHz)

Parameter Symbol Min Typ Max Unit

Input capacitance (A0 to A1, SCL, WP) Cin*
Output capacitance (SDA) C

Note: 1. This parameter is sampled and not 100% tested.

— — 2.0 µA VCC = 5.5 V, Vin = 0 to 5.5 V

(SCL, SDA)

——20µAVCC = 5.5 V, Vin = 0 to 5.5 V

(A0, A1, WP)
— — 2.0 µA VCC = 5.5 V, Vout = 0 to 5.5 V
— 1.0 3.0 µA Vin = VSS or V

CC

— — 2.0 mA VCC = 5.5 V, Read at 400 kHz
— — 5.0 mA VCC = 5.5 V, Write at 400 kHz
— — 0.4 V VCC = 4.5 to 5.5 V, IOL = 1.6 mA

V

= 2.5 to 4.5 V, IOL = 0.8 mA

CC

V

= 1.8 to 2.5 V, IOL = 0.4 mA

CC

— — 0.2 V VCC = 1.8 to 2.5 V, IOL = 0.2 mA

1

— — 6.0 pF Vin = 0 V

1

*

I/O

— — 6.0 pF Vout = 0 V

Test
conditions

4

HN58X24512I

AC Characteristics (Ta = –40 to +85˚C, VCC = 1.8 to 5.5 V)

Test Conditions

• Input pules levels:
 VIL = 0.2 × V
 VIH = 0.8 × V

• Input rise and fall time: 20 ns

• Input and output timing reference levels: 0.5 × V

• Output load: TTL Gate + 100 pF

Parameter Symbol Min Max Min Max Unit Notes

Clock frequency f
Clock pulse width low t
Clock pulse width high t
Noise suppression time t
Access time t
Bus free time for next mode t
Start hold time t
Start setup time t
Data in hold time t
Data in setup time t
Input rise time t
Input fall time t
Stop setup time t
Data out hold time t
Write cycle time t

Notes: 1. This parameter is sampled and not 100% tested.

2. t

WC

CC

CC

CC

VCC = 1.8 to 5.5 V VCC = 2.5 to 5.5 V

SCL

LOW

HIGH

I

AA

BUF

HD.STA

SU.STA

HD.DAT

SU.DAT

R

F

SU.STO

DH

WC

— 400 — 1000 kHz
1200 — 600 — ns
600 — 400 — ns
— 50 — 50 ns 1
100 900 100 550 ns
1200 — 500 — ns
600 — 250 — ns
600 — 250 — ns
0—0—ns
100 — 100 — ns
— 300 — 300 ns 1
— 300 — 100 ns 1
600 — 250 — ns
50 — 50 — ns
— 15 — 10 ms 2

is the time from a stop condition to the end of internally controlled write cycle.

5

HN58X24512I

Timing Waveforms

Bus Timing

SCL

t

SU.STA

1/f

t

HD.DAT

SCL

t

LOW

t

SU.DAT

t

F

t

HD.STA

t

HIGH

t

R

t

SU.STO

SDA
(in)

SDA
(out)

Write Cycle Timing

SCL

SDA

(Address (n))

t

AA

D0 in

Write data ACK

t

DH

Stop condition Start condition

t

WC

(Internally controlled)

t

BUF

6