HIT HM62W16258BLTTI-7 Datasheet
HM62W16258BI Series
4 M SRAM (256-kword × 16-bit)
ADE-203-1072A (Z)
Rev. 1.0
Jun. 10, 1999
Description
The Hitachi HM62W16258BI Series is 4-Mbit static RAM organized 262,144-word × 16-bit.
HM62W16258BI Series has realized higher density, higher performance and low power consumption by
employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is
suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Fast access time: 70 ns (max)
• Power dissipation:
Active: 9.9 mW (typ)
Standby: 3.3 µW (typ)
• Completely static memory.
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
• Temperature range: –40 to 85°C
Ordering Information
Type No. Access time Package
HM62W16258BLTTI-7 70 ns 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)
HM62W16258BI Series
Pin Arrangement
44-pin TSOP
A4
A3
A2
A1
A0
CS
I/O0
I/O1
I/O2
I/O3
V
CC
V
SS
I/O4
I/O5
I/O6
I/O7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
(Top view)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
V
SS
V
CC
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A12
Pin Description
Pin name Function
A0 to A17 Address input
I/O0 to I/O15 Data input/output
CS Chip select
WE Write enable
OE Output enable
LB Lower byte select
UB Upper byte select
V
CC
V
SS
NC No connection
2
Power supply
Ground
Block Diagram
HM62W16258BI Series
LSB
MSB
A4
A3
A15
A14
A16
A1
A2
A17
A0
A13
I/O0
I/O15
Row
decoder
Input
data
control
V
CC
V
SS
•
•
•
•
•
•
•
Memory matrix
2,048 x 2,048
Column I/O
•
•
Column decoder
CS
LB
UB
WE
OE
Control logic
LSB
A7
A6
•
•
A5
A8
A9
A10
A11
A12
MSB
3
HM62W16258BI Series
Operation Table
CS WE OE UB LB I/O0 to I/O7 I/O8 to I/O15 Operation
H ××××High-Z High-Z Standby
×××H H High-Z High-Z Standby
L H L L L Dout Dout Read
L H L H L Dout High-Z Lower byte read
L H L L H High-Z Dout Upper byte read
LL× L L Din Din write
LL× H L Din High-Z Lower byte write
LL× L H High-Z Din Upper byte write
LHH××High-Z High-Z Output disable
Note: H: VIH, L: VIL, ×: VIH or V
Absolute Maximum Ratings
Parameter Symbol Value Unit
Power supply voltage relative to V
Terminal voltage on any pin relative to V
Power dissipation P
Storage temperature range Tstg –55 to +125 °C
Storage temperature range under bias Tbias –40 to +85 °C
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
IL
SS
SS
V
CC
V
T
T
–0.5 to + 4.6 V
–0.5*1 to VCC + 0.3*
2
V
1.0 W
DC Operating Conditions
Parameter Symbol Min Typ Max Unit Note
Supply voltage V
Input high voltage V
Input low voltage V
CC
V
SS
IH
IL
Ambient temperature range Ta –40 — 85 °C
Note: 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
4
3.0 3.3 3.6 V
000V
2.2 — VCC + 0.3 V
–0.3 — 0.6 V 1
HM62W16258BI Series
DC Characteristics
Parameter Symbol Min Typ*1Max Unit Test conditions
Input leakage current |I
Output leakage current |ILO|— —1 µA CS = VIH or OE = VIH or WE = VIL, or
Operating current I
Average
HM62W16258BI-7 I
operating
current
Standby current I
Standby current I
Output high voltage V
Output low voltage V
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and not guaranteed.
|——1 µA Vin = VSS to V
LI
L B = UB =V
CC
CC1
— — 20 mA CS = VIL, Others = VIH/VIL, I
— — 70 mA Min. cycle, duty = 100%,
I
= 0 mA, CS = VIL,
I/O
Others = V
I
CC2
SB
SB1
— 3 15 mA Cycle time = 1 µs, duty = 100%,
I
= 0 mA, CS ≤ 0.2 V,
I/O
V
≥ VCC – 0.2 V, VIL ≤ 0.2 V
IH
— — 0.3 mA CS = V
—140µA 0 V ≤ Vin
CS ≥ V
OH
OL
2.4 — — V IOH = –1 mA
V
– 0.2 — — V IOH = –100 µA
CC
— — 0.4 V IOL = 2 mA
— — 0.2 V IOL = 100 µA
IH
– 0.2 V
CC
IH ,
IH/VIL
CC
, V
I/O
= VSS to V
CC
= 0 mA
I/O
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter Symbol Min Typ Max Unit Test conditions Note
Input capacitance Cin — — 8 pF Vin = 0 V 1
Input/output capacitance C
I/O
Note: 1. This parameter is sampled and not 100% tested.
— — 10 pF V
= 0 V 1
I/O
5
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